2SB1282 pdf Datasheet and Replacements, Transistor Equivalent Finder, Cross Reference

..1. Size:321K shindengen
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SHINDENGEN Darlington Transistor OUTLINE DIMENSIONS 2SB1282 Case ITO-220 Unit mm (TP4J10) 4A PNP RATINGS ... See More ⇒

8.1. Size:63K rohm
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8.2. Size:37K panasonic
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Transistor 2SB1288 Silicon PNP epitaxial planer type For low-frequency power amplification Unit mm For DC-DC converter 5.0 0.2 4.0 0.2 For stroboscope Features Low collector to emitter saturation voltage VCE(sat). Large collector current IC. 0.7 0.1 Allowing supply with the radial taping. Absolute Maximum Ratings (Ta=25 C) +0.15 +0.15 0.45 0.1 0.45 0.1 Parameter Sy... See More ⇒

8.3. Size:41K panasonic
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Transistor 2SB1288 Silicon PNP epitaxial planer type For low-frequency power amplification Unit mm For DC-DC converter 5.0 0.2 4.0 0.2 For stroboscope Features Low collector to emitter saturation voltage VCE(sat). Large collector current IC. 0.7 0.1 Allowing supply with the radial taping. Absolute Maximum Ratings (Ta=25 C) +0.15 +0.15 0.45 0.1 0.45 0.1 Parameter Sy... See More ⇒

8.4. Size:325K shindengen
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SHINDENGEN Darlington Transistor OUTLINE DIMENSIONS 2SB1285 Case MTO-3P Unit mm (T15J10) -15A PNP RATINGS ... See More ⇒

8.5. Size:281K shindengen
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SHINDENGEN Darlington Transistor OUTLINE DIMENSIONS 2SB1283 Case ITO-220 Unit mm (TP7J10) A PNP RATINGS ... See More ⇒

8.6. Size:321K shindengen
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SHINDENGEN Darlington Transistor OUTLINE DIMENSIONS 2SB1284 Case ITO-220 Unit mm (TP10J10) A PNP RATINGS ... See More ⇒

8.7. Size:208K inchange semiconductor
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isc Silicon PNP Darlingtion Power Transistor 2SB1283 DESCRIPTION High DC Current Gain- h = 1500(Min.)@I = -3A FE C Low Collector Saturation Voltage- V = -1.5V(Max)@I = -3A CE(sat) C Good Linearity of h FE Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS High power switching applications. Hammer drive, pulse motor drive... See More ⇒

8.8. Size:215K inchange semiconductor
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isc Silicon PNP Darlington Power Transistor 2SB1287 DESCRIPTION High DC Current Gain- h = 1000(Min)@ I = -1A FE C Collector-Emitter Breakdown Voltage- V = -100V(Min) (BR)CEO Low Collector-Emitter Saturation Voltage V = -1.5V(Max)@ I = -1A CE(sat) C Complement to Type 2SD1765 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATION... See More ⇒

8.9. Size:209K inchange semiconductor
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isc Silicon PNP Darlingtion Power Transistor 2SB1284 DESCRIPTION High DC Current Gain- h = 1500(Min.)@I = -5A FE C Low Collector Saturation Voltage- V = -1.5V(Max)@I = -5A CE(sat) C Good Linearity of h FE Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS High power switching applications. Hammer drive, pulse motor drive... See More ⇒

8.10. Size:217K inchange semiconductor
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isc Silicon PNP Power Transistor 2SB1289 DESCRIPTION High Collector Current I = -7A C Low Collector Saturation Voltage V = -1.0V(Max)@I = -4A CE(sat) C Wide Area of Safe Operation Complement to Type 2SD1580 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for low frequency power amplifier applications. ABSOLUTE... See More ⇒

8.11. Size:214K inchange semiconductor
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isc Silicon PNP Darlington Power Transistor 2SB1286 DESCRIPTION High DC Current Gain- h = 1000(Min)@ I = -1A FE C Collector-Emitter Breakdown Voltage- V = -100V(Min) (BR)CEO Low Collector-Emitter Saturation Voltage V = -1.5V(Max)@ I = -1A CE(sat) C Complement to Type 2SD1646 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATION... See More ⇒