All Transistors. 2SB1282 Datasheet

 

2SB1282 Datasheet and Replacement


   Type Designator: 2SB1282
   Material of Transistor: Si
   Polarity: PNP
   Maximum Collector Power Dissipation (Pc): 25 W
   Maximum Collector-Base Voltage |Vcb|: 100 V
   Maximum Collector-Emitter Voltage |Vce|: 100 V
   Maximum Emitter-Base Voltage |Veb|: 5 V
   Maximum Collector Current |Ic max|: 4 A
   Max. Operating Junction Temperature (Tj): 175 °C
   Transition Frequency (ft): 25 MHz
   Forward Current Transfer Ratio (hFE), MIN: 2000
   Noise Figure, dB: -
   Package: TO126
 

 2SB1282 Substitution

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2SB1282 Datasheet (PDF)

 ..1. Size:321K  shindengen
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2SB1282

SHINDENGENDarlington TransistorOUTLINE DIMENSIONS2SB1282 Case : ITO-220Unit : mm(TP4J10)4A PNPRATINGS

 8.1. Size:63K  rohm
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2SB1282

 8.2. Size:37K  panasonic
2sb1288.pdf pdf_icon

2SB1282

Transistor2SB1288Silicon PNP epitaxial planer typeFor low-frequency power amplificationUnit: mmFor DC-DC converter5.0 0.2 4.0 0.2For stroboscopeFeaturesLow collector to emitter saturation voltage VCE(sat).Large collector current IC.0.7 0.1Allowing supply with the radial taping.Absolute Maximum Ratings (Ta=25C)+0.15 +0.150.45 0.1 0.45 0.1Parameter Sy

 8.3. Size:41K  panasonic
2sb1288 e.pdf pdf_icon

2SB1282

Transistor2SB1288Silicon PNP epitaxial planer typeFor low-frequency power amplificationUnit: mmFor DC-DC converter5.0 0.2 4.0 0.2For stroboscopeFeaturesLow collector to emitter saturation voltage VCE(sat).Large collector current IC.0.7 0.1Allowing supply with the radial taping.Absolute Maximum Ratings (Ta=25C)+0.15 +0.150.45 0.1 0.45 0.1Parameter Sy

Datasheet: 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , BC546 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .

History: 2SB1343 | RS7611 | PUMB10 | BC214L | PTB20206 | BC206B | BC234

Keywords - 2SB1282 transistor datasheet

 2SB1282 cross reference
 2SB1282 equivalent finder
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