2SB13 . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

This product complies with the RoHS Directive (EU 2002/95/EC).Power Transistors 2SB1322Silicon PNP epitaxial planar typeFor low frequency power amplificationComplementary to 2SD1994 Package Features Code Allowing supply with the radial taping MT-2-A1 Absolute Maximum Ratings Ta = 25C Pin Name 1. EmitterParameter Symbol Rating Unit 2. Collector

Maintenance/DiscontinuedMaintenance/Discontinued includes following four Product lifecycle stage.(planed maintenance type, maintenance type, planed discontinued typed, discontinued type)Maintenance/DiscontinuedMaintenance/Discontinued includes following four Product lifecycle stage.(planed maintenance type, maintenance type, planed discontinued typed, discontinued type)Mainten

Ordering number:EN2911PNP Epitaxial Planar Silicon Transistor2SB1396DC-DC Converter, Motor Driver ApplicationsFeatures Package Dimensions Adoption of FBET, MBIT processes.unit:mm Large current capacity.2038 Low collector-to-emitter saturation voltage.[2SB1396] Small size making it easy to provide high-density,small-sized hybrid ICs.E : EmitterC : Collecto

Ordering number : EN2555B2SB1302SANYO SemiconductorsDATA SHEETPNP Epitaxial Planar Silicon Transistor2SB1302High-Current Switching ApplicationsApplications DC-DC converters, motor drivers, relay drivers, lamp drivers.Features Adoption of FBET, MBIT processes. Low collector-to-emitter saturation voltage. Large current capacity. Fast switching speed.

Ordering number:EN2910PNP Epitaxial Planar Silicon Transistor2SB1395DC-DC Converter, Motor Driver ApplicationsFeatures Package Dimensions Adoption of FBET, MBIT processes.unit:mm Large current capacity.2003A Low collector-to-emitter saturation voltage.[2SB1395]JEDEC : TO-92EIAJ : SC-43SANYO: NP B : BaseC : CollectorE : EmitterSpecificationsAbsolute Max

Appendix NotesNo technical content pages of this document may be reproduced in any form or transmitted by any means without prior permission of ROHM CO.,LTD.The contents described herein are subject to change without notice. The specifications for theproduct described in this document are for reference only. Upon actual use, therefore, please requestthat specifications to be sep

2SB1580 / 2SB1316 / 2SB1567TransistorsPower Transistor (-100V , -2A)2SB1580 / 2SB1316 / 2SB1567 Features External dimensions (Units : mm)1) Darlington connection for high DC current gain.2SB15804.02) Built-in resistor between base and emitter.1.0 2.5 0.53) Built-in damper diode.(1)4) Complements the 2SD2195 / 2SD1980 / 2SD2398.(2)(3)(1) Base(Gate)(2) Collector(Dr

2SB1370TransistorsTransistors2SB1655 / 2SB1565(94L-411-B303)(94L-456-B349)319

2SB1316 Transistors Power Transistor (-100V , -2A) 2SB1316 External dimensions (Unit : mm) Features 1) Darlington connection for high DC current gain. 2SB15804.02) Built-in resistor between base and emitter. 1.0 2.5 0.53) Built-in damper diode. (1)4) Complements the 2SD2195 / 2SD1980. (2)(3)(1) Base(2) Collector Absolute maximum ratings (Ta = 25C) ROHM

2SB1474 / 2SB1342TransistorsTransistors2SD1933(94S-181-B400)(94L-906-D400)298

Appendix NotesNo technical content pages of this document may be reproduced in any form or transmitted by any means without prior permission of ROHM CO.,LTD.The contents described herein are subject to change without notice. The specifications for theproduct described in this document are for reference only. Upon actual use, therefore, please requestthat specifications to be sep

2SB1344TransistorsTransistors2SD2025(94L-374-B403)(94L-969-D403)299

2SB1335TransistorsTransistors2SD1855(94L-356-B14)(94L-878-D14)279

TransistorsLow Frequency Transistor (*20V,*5A)2SB1386 / 2SB1412 / 2SB1326 / 2SB1436FFeatures FExternal dimensions (Units: mm)1) Low VCE(sat).VCE(sat) = *0.35V (Typ.)(IC / IB = *4A / *0.1A)2) Excellent DC current gain charac-teristics.3) Complements the 2SD2098 /2SD2118 / 2SD2097 / 2SD2166.FStructureEpitaxial planar typePNP silicon transistor(96-141-B204)211Tra

2SB1308TransistorsTransistors2SD1963(94S-166-B204)(94S-342-D204)290

2SB1308TransistorsTransistors2SD1963(94S-166-B204)(94S-342-D204)290Appendix NotesNo technical content pages of this document may be reproduced in any form or transmitted by any means without prior permission of ROHM CO.,LTD.The contents described herein are subject to change without notice. The specifications for theproduct described in this document are for reference o

2SB1340TransistorsTransistors2SD1889(96-650-B88)(96-765-D88)288

2SB1386 / 2SB1412 / 2SB1326 Transistors Low frequency transistor (-20V, -5A) 2SB1386 / 2SB1412 / 2SB1326 External dimensions (Unit : mm) Features 1) Low VCE(sat). 2SB1386 2SB1412VCE(sat) = -0.35V (Typ.) 2.3+0.26.50.2-0.14.5+0.2C0.5-0.15.1+0.21.5+0.2 -0.1 0.50.1(IC/IB = -4A / -0.1A) 1.60.1 -0.12) Excellent DC current gain characteristics. 3) Compleme

MCCTMMicro Commercial Components2SB1366F-O20736 Marilla Street ChatsworthMicro Commercial ComponentsCA 913112SB1366F-YPhone: (818) 701-4933Fax: (818) 701-4939Features Epoxy meets UL 94 V-0 flammability ratingPNP Silicon Moisure Sensitivity Level 1 Low VCE(SAT):VCE(SAT)=-1.0V(Max.)(IC/IB=-2A/-0.2A)Power Transistors Lead Free Finish/RoHS Compliant (No

MCCTMMicro Commercial Components2SB1366F-O20736 Marilla Street ChatsworthMicro Commercial ComponentsCA 913112SB1366F-YPhone: (818) 701-4933Fax: (818) 701-4939Features Epoxy meets UL 94 V-0 flammability ratingPNP Silicon Moisure Sensitivity Level 1 Low VCE(SAT):VCE(SAT)=-1.0V(Max.)(IC/IB=-2A/-0.2A)Power Transistors Lead Free Finish/RoHS Compliant (No

Ordering number : EN2555C2SB1302Bipolar Transisitorhttp://onsemi.com ( )20V, 5A, Low VCE sat PNP Single PCPApplicaitons DC-DC converters, motor drivers, relay drivers, lamp driversFeatures Adoption of FBET, MBIT processes Low collector to emitter saturation voltage Large current capacity Fast switching speed Ultrasmall size making it easy to

Ordering number : EN2555C2SB1302Bipolar Transisitorhttp://onsemi.com ( )20V, 5A, Low VCE sat PNP Single PCPApplicaitons DC-DC converters, motor drivers, relay drivers, lamp driversFeatures Adoption of FBET, MBIT processes Low collector to emitter saturation voltage Large current capacity Fast switching speed Ultrasmall size making it easy to

Transistor2SB1322ASilicon PNP epitaxial planer typeFor low-frequency power amplificationUnit: mmComplementary to 2SD1994A2.5 0.11.056.9 0.1 0.05 (1.45)0.7 4.0 0.8FeaturesAllowing supply with the radial taping.0.65 max.Absolute Maximum Ratings (Ta=25C)+0.1 0.450.05Parameter Symbol Ratings Unit2.5 0.5 2.5 0.5Collector to base voltage VCBO 60

Transistor2SB1319Silicon PNP epitaxial planer typeFor low-frequency power amplificationUnit: mm6.9 0.1 2.5 0.11.51.5 R0.9 1.0FeaturesR0.9Low collector to emitter saturation voltage VCE(sat).Large collector current IC.M type package allowing easy automatic and manual insertion aswell as stand-alone fixing to the printed circuit board.0.850.55 0.1 0.45 0.05

Transistor2SB1378Silicon PNP epitaxial planer typeFor low-frequency power amplificationUnit: mmComplementary to 2SD19966.9 0.1 1.05 2.5 0.1 0.05 (1.45)0.7 4.00.8FeaturesLow collector to emitter saturation voltage VCE(sat).Optimum for low-voltage operation and for converters.0.65 max.Allowing supply with the radial taping.+0.1 0.450.05Absolute Maximum R

Power Transistors2SB1347Silicon PNP triple diffusion planar typeFor high power amplificationUnit: mmComplementary to 2SD2029 3.3 0.220.0 0.5 5.0 0.33.0FeaturesSatisfactory foward current transfer ratio hFE vs. collector cur-rent IC characteristicsWide area of safe operation (ASO) 1.5High transition frequency fTOptimum for the output stage of a HiFi audio am

Transistors2SB1322ASilicon PNP epitaxial planer typeUnit: mm2.50.11.05For low-frequency power amplification6.90.1 0.05 (1.45)0.7 4.0 0.8Complementary to 2SD1994A Features0.65 max. Allowing supply with the radial taping+0.1 0.45-0.05 Absolute Maximum Ratings Ta = 25C2.50.5 2.50.51 2 3Parameter Symbol Rating UnitCollector to base voltage VCBO -

Transistor2SB1320ASilicon PNP epitaxial planer typeFor general amplificationUnit: mmComplementary to 2SD1991A6.9 0.1 1.05 2.5 0.1 0.05 (1.45)0.7 4.00.8FeaturesHigh foward current transfer ratio hFE.Allowing supply with the radial taping.0.65 max.+0.1 0.450.05Absolute Maximum Ratings (Ta=25C)2.5 0.5 2.5 0.5Parameter Symbol Ratings Unit1 2 3C

Transistors2SB1320ASilicon PNP epitaxial planer typeUnit: mmFor general amplification6.90.1 1.05 2.50.10.05 (1.45)0.7 4.00.8Complementary to 2SD1991A Features0.65 max. High forward current transfer ratio hFE Allowing supply with the radial taping+0.1 0.45-0.052.50.5 2.50.5 Absolute Maximum Ratings Ta = 25C1 2 3Parameter Symbol Rating Unit

Power Transistors2SB1361Silicon PNP triple diffusion planar typeFor high power amplificationUnit: mmComplementary to 2SD205215.0 0.3 5.0 0.2Features11.0 0.2 3.2Satisfactory foward current transfer ratio hFE vs. collector cur-rent IC characteristics 3.2 0.1Wide area of safe operation (ASO)High transition frequency fTFull-pack package which can be installed t

Transistor2SB1321ASilicon PNP epitaxial planer typeFor low-frequency output amplification and driver amplificationUnit: mmComplementary to 2SD1992A6.9 0.1 1.05 2.5 0.1 0.05 (1.45)0.7 4.00.8FeaturesAllowing supply with the radial taping.Large collector power dissipation PC. (600mW)0.65 max.+0.1 0.450.05Absolute Maximum Ratings (Ta=25C)2.5 0.5 2.5

Power Transistors2SB1317Silicon PNP triple diffusion planar typeFor high power amplificationUnit: mmComplementary to 2SD1975 3.3 0.220.0 0.5 5.0 0.33.0FeaturesSatisfactory foward current transfer ratio hFE vs. collector cur-rent IC characteristicsWide area of safe operation (ASO) 1.5High transition frequency fTOptimum for the output stage of a HiFi audio am

Transistor2SB1377Silicon PNP epitaxial planer typeFor low-frequency power amplification and driver amplificationUnit: mmComplementary to 2SD20712.5 0.11.056.9 0.1 0.05 (1.45)0.7 4.0 0.8FeaturesAllowing supply with the radial taping.0.65 max.Absolute Maximum Ratings (Ta=25C)+0.1 0.450.05Parameter Symbol Ratings Unit2.5 0.5 2.5 0.5Collector to b

Transistors2SB1321ASilicon PNP epitaxial planer typeUnit: mm6.90.1 1.05 2.50.1For general amplification0.05 (1.45)0.7 4.00.8Complementary to 2SD1992A Features0.65 max. Large collector power dissipation PC (600 mW) Allowing supply with the radial taping+0.1 0.45-0.052.50.5 2.50.5 Absolute Maximum Ratings Ta = 25C1 2 3Parameter Symbol Rating

Transistor2SB1319Silicon PNP epitaxial planer typeFor low-frequency power amplificationUnit: mm6.9 0.1 2.5 0.11.51.5 R0.9 1.0FeaturesR0.9Low collector to emitter saturation voltage VCE(sat).Large collector current IC.M type package allowing easy automatic and manual insertion aswell as stand-alone fixing to the printed circuit board.0.850.55 0.1 0.45 0.05

Power Transistors2SB1393, 2SB1393ASilicon PNP epitaxial planar typeFor power amplificationComplementary to 2SD1985 and 2SD1985AUnit: mmFeatures10.0 0.2 4.2 0.2Satisfactory linearity of foward current transfer ratio hFE5.5 0.2 2.7 0.2Low collector to emitter saturation voltage VCE(sat)Full-pack package which can be installed to the heat sink withone screw 3.1

Transistor2SB1398Silicon PNP epitaxial planer typeFor low-frequency output amplificationUnit: mm2.5 0.11.056.9 0.1 0.05 (1.45)0.7 4.0 0.8FeaturesLow collector to emitter saturation voltage VCE(sat).Large collector current IC.0.65 max.Allowing supply with the radial taping.+0.1 Absolute Maximum Ratings (Ta=25C) 0.450.052.5 0.5 2.5 0.5Parameter Sy

Transistor2SB1378Silicon PNP epitaxial planer typeFor low-frequency power amplificationUnit: mmComplementary to 2SD19966.9 0.1 1.05 2.5 0.1 0.05 (1.45)0.7 4.00.8FeaturesLow collector to emitter saturation voltage VCE(sat).Optimum for low-voltage operation and for converters.0.65 max.Allowing supply with the radial taping.+0.1 0.450.05Absolute Maximum R

Power Transistors2SB1371Silicon PNP triple diffusion planar typeFor high power amplificationUnit: mmComplementary to 2SD206415.0 0.3 5.0 0.2Features11.0 0.2 3.2Satisfactory foward current transfer ratio hFE vs. collector cur-rent IC characteristics 3.2 0.1Wide area of safe operation (ASO)High transition frequency fTFull-pack package which can be installed t

Transistor2SB1398Silicon PNP epitaxial planer typeFor low-frequency output amplificationUnit: mm2.5 0.11.056.9 0.1 0.05 (1.45)0.7 4.0 0.8FeaturesLow collector to emitter saturation voltage VCE(sat).Large collector current IC.0.65 max.Allowing supply with the radial taping.+0.1 Absolute Maximum Ratings (Ta=25C) 0.450.052.5 0.5 2.5 0.5Parameter Sy

UNISONIC TECHNOLOGIES CO., LTD 2SB1386 PNP SILICON TRANSISTOR LOW FREQUENCY PNP TRANSISTOR FEATURES * Excellent DC current gain characteristics * Low VCE(SAT) VCE(SAT)= -0.35V (Typ) (IC/IB = -4A/-0.1A) ORDERING INFORMATION Pin Assignment Order Number Package Packing 1 2 32SB1386G-x-AB3-R SOT-89 B C E Tape ReelNote: Pin Assignment: B: Base C: Collector E: Emit

2SB1389Silicon PNP Triple DiffusedApplicationLow frequency power amplifierOutlineTO-220FM211. BaseID2. Collector3. Emitter14.5 k 500 23(Typ) (Typ)32SB1389Absolute Maximum Ratings (Ta = 25C)Item Symbol Ratings UnitCollector to base voltage VCBO 60 VCollector to emitter voltage VCEO 60 VEmitter to base voltage VEBO 7 VCollector cur

2SB1390Silicon PNP Triple DiffusedApplicationLow frequency power amplifierOutlineTO-220FM211. BaseID2. Collector3. Emitter14 k 200 23(Typ) (Typ)32SB1390Absolute Maximum Ratings (Ta = 25C)Item Symbol Ratings UnitCollector to base voltage VCBO 60 VCollector to emitter voltage VCEO 60 VEmitter to base voltage VEBO 7 VCollector curre

2SB1399Silicon PNP Triple DiffusedApplicationLow frequency power amplifierOutlineTO-220FM211. BaseID2. Collector3. Emitter12 1.0 k 200 3(Typ) (Typ)32SB1399Absolute Maximum Ratings (Ta = 25C)Item Symbol Ratings UnitCollector to base voltage VCBO 120 VCollector to emitter voltage VCEO 120 VEmitter to base voltage VEBO 7 VCollector cu

To all our customersRegarding the change of names mentioned in the document, such as Hitachi Electric and Hitachi XX, to Renesas Technology Corp.The semiconductor operations of Mitsubishi Electric and Hitachi were transferred to Renesas Technology Corporation on April 1st 2003. These operations include microcomputer, logic, analog and discrete devices, and memory chips other than DRAM

2SB1391Silicon PNP Triple DiffusedApplicationPower switchingOutlineTO-220FM211. Base2. Collector3. Emitter12 k 200 23(Typ) (Typ)32SB1391Absolute Maximum Ratings (Ta = 25C)Item Symbol Ratings UnitCollector to base voltage VCBO 120 VCollector to emitter voltage VCEO 120 VEmitter to base voltage VEBO 7 VCollector current IC 8 ACo

2SB1322A -1A , -60V PNP Plastic Encapsulated Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of -C specifies halogen & lead-free TO-92 FEATURES G H Allow Supply with The Radial Taping EmitterCollectorBase JA DCLASSIFICATION OF hFE (1) Millimeter REF.Min. Max.Product-Rank 2SB1322A-Q 2SB1322A-R 2SB1322A-SBA 4.40 4.70

2SB1386 -5A, -30V PNP Silicon Low Frequency Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of -C specifies halogen & lead-free SOT-89 FEATURES Low VCE(sat) 4 Excellent DC current gain characteristics Complements the 2SD2098 123AECCLASSIFICATION OF hFE Product-Rank 2SB1386-P 2SB1386-Q 2SB1386-R B DRange 82~180 120~270 180~39

ISAHAYA ELECTRONICS CORPORATIONISAHAYA ELECTRONICS CORPORATIONhttp://www.idc-com.co.jp6-41, TSUKUBA, ISAHAYA, NAGASAKI, 854-0065, JAPANKeep safety in your circuit designs !Isahaya Electronics Corporation puts the maximum effort into making semiconductor products better and more reliable, but there is always the possibility that trouble may occur with them. Trouble with

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-89-3L Plastic-Encapsulate Transistors 2SB1386 TRANSISTOR (PNP) SOT-89-3L FEATURES Low collector saturation voltage 1. BASE Execllent current-to-gain characteristics 2. COLLECTOR MAXIMUM RATINGS (Ta=25 unless otherwise noted) 3. EMITTER Symbol Parameter Value Unit VCBO -30 VCollector-Base Voltage VCEO Col

JMnic Product Specification Silicon PNP Power Transistors 2SB1389 DESCRIPTION With TO-220Fa package High DC current gain Low saturation voltage DARLINGTON APPLICATIONS For use in low frequency power amplifier applications PINNING PIN DESCRIPTION1 Base 2 CollectorFig.1 simplified outline (TO-220Fa) and symbol 3 EmitterAbsolute maximum ratings(Ta=25)

JMnic Product Specification Silicon PNP Power Transistors 2SB1393 2SB1393A DESCRIPTION With TO-220Fa package Satisfactory linearity of hFE Low collector to emitter saturation voltage Complement to type 2SD1985/1985A APPLICATIONS For power amplification PINNING PIN DESCRIPTION1 Base 2 CollectorFig.1 simplified outline (TO-220Fa) and symbol3 EmitterAbsolute

JMnic Product Specification Silicon PNP Power Transistors 2SB1393 2SB1393A DESCRIPTION With TO-220Fa package Satisfactory linearity of hFE Low collector to emitter saturation voltage Complement to type 2SD1985/1985A APPLICATIONS For power amplification PINNING PIN DESCRIPTION1 Base 2 CollectorFig.1 simplified outline (TO-220Fa) and symbol3 EmitterAbsolute

JMnic Product Specification Silicon PNP Power Transistors 2SB1381 DESCRIPTION With TO-220F package Complement to type 2SD2079 Low collector saturation voltage High DC current gain APPLICATIONS High power switching applications Hammer drive,pulse motor drive applications PINNING PIN DESCRIPTION1 Base 2 CollectorFig.1 simplified outline (TO-220F) and symbol

JMnic Product Specification Silicon PNP Power Transistors 2SB1375 DESCRIPTION With TO-220F package Complement to type 2SD2012 Low collector saturation voltage: VCE(SAT)=-1.5V(Max) at IC=-2A,IB=-0.2A Collector power dissipation: PC=25W(TC=25) APPLICATIONS Audio frequency power amplifier PINNING PIN DESCRIPTION1 Base 2 CollectorFig.1 simplified outline (

JMnic Product Specification Silicon PNP Power Transistors 2SB1371 DESCRIPTION With TO-3PFa package Complement to type 2SD2064 High transition frequency Satisfactory linearity of hFE APPLICATIONS For high power amplification PINNING PIN DESCRIPTION1 Base 2 Collector3 EmitterAbsolute maximum ratings(Ta=25) SYMBOL PARAMETER CONDITIONS VALUE UNITVCBO C

E(2k)(100)BDarlington 2SB1352Equivalent circuitCSilicon PNP Epitaxial Planar TransistorApplication : Driver for Printer Head, Solenoid, Relay, Motor and General PurposeExternal Dimensions FM100(TO3PF) Absolute maximum ratings (Ta=25C) Electrical Characteristics (Ta=25C)Symbol 2SB1352 Unit Symbol Conditions 2SB1352 Unit0.20.2 5.515.60.23.45VCBO

E(2k) (80)BDarlington 2SB1383Equivalent circuitCSilicon PNP Epitaxial Planar Transistor (Complement to type 2SD2083)Application : Chopper Regulator, DC Motor Driver and General PurposeExternal Dimensions MT-100(TO3P) Absolute maximum ratings (Ta=25C) Electrical Characteristics (Ta=25C)Symbol Ratings Conditions Ratings UnitUnit Symbol0.24.80.415.60

E(2k) (80)BDarlington 2SB1382Equivalent circuitCSilicon PNP Epitaxial Planar Transistor (Complement to type 2SD2082)Application : Chopper Regulator, DC Motor Driver and General PurposeExternal Dimensions FM100(TO3PF) Absolute maximum ratings (Ta=25C) Electrical Characteristics (Ta=25C)Symbol Ratings Symbol Conditions Ratings UnitUnit0.20.2 5.515.60.

E(2k)(100)BDarlington 2SB1351Equivalent circuitCSilicon PNP Epitaxial Planar TransistorApplication : Driver for Printer Head, Solenoid, Relay, Motor and General Purpose Absolute maximum ratings (Ta=25C) Electrical Characteristics (Ta=25C) External Dimensions FM20(TO220F)Symbol Ratings Unit Symbol Condition RatingsUnit0.24.20.210.1c0.52.8VCBO 60

2SB1 38 6TRANSISTOR(PNP)FEATURES Low collector saturation voltage, Execllent current-to-gain characteristics MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter Value UnitsVCBO -30 VCollector-Base Voltage VCEO Collector-Emitter Voltage -20 V VEBO Emitter-Base Voltage -6 V IC Collector Current -Continuous -5 A PC Collector Power Dissipation 0.5 W TJ J

2SB1 308TRANSISTOR SOT-89-3L 1. BASE FEATURES 2. COLLECTOR Power Transistor Excellent DC current Gain 3. EMITTER Low Collector-emitter Saturation Voltage MAXIMUM RATINGS (Ta=25 unless otherwise noted) Symbol Parameter Value UnitVCBO Collector-Base Voltage -30 V VCEO Collector-Emitter Voltage -20 V VEBO Emitter-Base Voltage -6 V IC Collector Current -3 A PC C

2SB1370(PNP)TO-220F Bipolar TransistorsTO-220F1. BASE 2. COLLECTOR 3. EMITTE 1 2 3Features Breakdown Voltage High Reverse Cut-off Current Small Saturation Voltage Low Collector Power dissipation PCM : 2 W (Tamb=25) 30 W (Tcase=25) Dimensions in inches and (millimeters)MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter Value Units

2SB1386 SOT-89 Transistor(PNP)1. BASE SOT-891 2. COLLECTOR 4.6B4.42 1.61.81.41.43. EMITTER 3 2.6 4.252.43.75Features 0.8MIN Low collector saturation voltage, 0.530.400.480.442x)0.13 B0.35 Execllent current-to-gain characteristics 0.371.53.0MAXIMUM RATINGS (TA=25 unless otherwise noted) Dimensions in inches and (millimeters

2SB1375(PNP) TO-220 TransistorTO-2201. BASE 2. COLLECTOR 3. EMITTER 3 21Features High Power Dissipation: PC=25W(TC=25) Low voltage:VCE(sat)=-1.5V(Max)(IC=-2A,IB=-0.2A) Collector metal(Fin)is Coverd with Mold Regin Complementary to 2SD2012 MAXIMUM RATINGS (TA=25 unless otherwise noted ) Dimensions in inches and (millimeters)Symbol Parameter

2SB1386PNP EPITAXIAL PLANAR TRANSISTORP b Lead(Pb)-Free1. BASE2. COLLECTOR3. EMITTER 123Features:SOT-89* Excellent DC Current Gain Characteristics* Low VCE(Sat)Mechanical Data:* Case : Molded PlasticABSOLUTE MAXIMUM RATINGS(TA=25C)Rating Symbol Value UnitVCBO-30 VCollector to Base VoltageVCEO-20 VCollector to Emitter VoltageVVEBO -6Collector to

FM120-M WILLAS2SB1386THRUSOT-89 Plastic-Encapsulate TransistorsFM1200-M 1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200VSOD-123 PACKAGE Pb Free ProductPackage outlineFeatures Batch process dTRANSISTOR (PNP) eesign, excellent power dissipation offers better reverse l akage current and thermal resistance.SOD-123HSOT-89 Low pFEATURES mirofile surf

FM120-M WILLASTHRU2SB1308 SOT-89 Plastic-Encapsulate Transistors FM1200-M 1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200VSOD-123 PACKAGE Pb Free ProductPa c kage outlineFeaturesTRANSISTOR (PNP) esign, excellent power dissipation offers Batch process dSOT-89 better reverse leakage current and thermal resistance.FEATURES SOD-123H Low p Powe

ST 2SB1386U PNP Silicon Epitaxial Planar Transistor Low frequency transistor Absolute Maximum Ratings (Ta = 25) Parameter Symbol Value UnitCollector Base Voltage -VCBO 30 VCollector Emitter Voltage -VCEO 20 VEmitter Base Voltage -VEBO 6 VCollector Current - DC -IC 5 A Collector Current - Pulse 1) -ICP 10 0.5 PC W Collector Power Dissipation2 2) Junction Tempera

SMD Type TransistorsPNP Transistors2SB13231.70 0.1 Features Contains diode between collector and emitter. Low saturation voltage.0.42 0.10.46 0.1 Large current capacity. Complementary to 2SD19971.Base2.Collector3.Emitter Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Collector - Base Voltage VCBO -40 Collector - Emitter Vo

SMD Type TransistorsPNP Transistors2SB13961.70 0.1 Features Low collector to emitter saturation voltage Large current capacity0.42 0.10.46 0.11.Base2.Collector3.Emitter Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Collector - Base Voltage VCBO -15 Collector - Emitter Voltage VCEO -10 V Emitter - Base Voltage VEBO -7 Collector Cu

SMD Type TransistorsPower Transistor2SB1308FeaturesLow saturation voltage, typicallyVCE(sat) = -0.45V (Max.) at IC/IB = -1.5A / -0.15A.Excellent DC current gain characteristics.Absolute Maximum Ratings Ta = 25Parameter Symbol Rating UnitCollector-base voltage VCBO -30 VCollector-emitter voltage VCEO -20 VEmitter-base voltage VEBO -6 VCollector current IC -3 ACollector

SMD Type TransistorsPNP Transistors2SB13251.70 0.1 Features Contains diode between collector and emitter. Low saturation voltage.Collector Large current capacity.0.42 0.10.46 0.1 Complementary to 2SD1999 Base1.Base2.CollectorRBE3.EmitterEmitter Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Collector - Base Voltage V

SMD Type TransistorsPNP Transistors2SB13971.70 0.1 Features Low collector to emitter saturation voltage Large current capacity Complementary to 2SD2100 Collector0.42 0.10.46 0.1 Base1.Base2.CollectorRBE3.EmitterEmitter Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Collector - Base Voltage VCBO -25 Collector - Emitter Volt

SMD Type TransistorsLow Frequency Transistor2SB1386FeaturesLow VCE(sat).VCE(sat) = -0.35V (Typ.)(IC/IB = -4A / -0.1A)Excellent DC current gainEpitaxial planar typePNP silicon transistorAbsolute Maximum Ratings Ta = 25Parameter Symbol Rating UnitCollector-base voltage VCBO -30 VCollector-emitter voltage VCEO -20 VEmitter-base voltage VEBO -6 VCollector current IC -5

SMD Type TransistorsLow Frequency Transistor2SB1386FeaturesLow VCE(sat).VCE(sat) = -0.35V (Typ.)(IC/IB = -4A / -0.1A)Excellent DC current gainEpitaxial planar typePNP silicon transistorAbsolute Maximum Ratings Ta = 25Parameter Symbol Rating UnitCollector-base voltage VCBO -30 VCollector-emitter voltage VCEO -20 VEmitter-base voltage VEBO -6 VCollector current IC -5

SMD Type Transistors PNP Transistors2SB1386Features1.70 0.1Low VCE(sat).VCE(sat) = -0.35V (Typ.)(IC/IB = -4A / -0.1A)Excellent DC current gainEpitaxial planar type0.42 0.10.46 0.1PNP silicon transistor1.Base2.Collector3.EmitterAbsolute Maximum Ratings Ta = 25Parameter Symbol Rating UnitCollector-base voltage VCBO -30 VCollector-emitter voltage VCEO -20 VE

SMD Type TransistorsPower Transistor2SB1308FeaturesLow saturation voltage, typicallyVCE(sat) = -0.45V (Max.) at IC/IB = -1.5A / -0.15A.Excellent DC current gain characteristics.Absolute Maximum Ratings Ta = 25Parameter Symbol Rating UnitCollector-base voltage VCBO -30 VCollector-emitter voltage VCEO -20 VEmitter-base voltage VEBO -6 VCollector current IC -3 ACollector

SMD Type TransistorsLow Frequency Transistor2SB1386FeaturesLow VCE(sat).VCE(sat) = -0.35V (Typ.)(IC/IB = -4A / -0.1A)Excellent DC current gainEpitaxial planar typePNP silicon transistorAbsolute Maximum Ratings Ta = 25Parameter Symbol Rating UnitCollector-base voltage VCBO -30 VCollector-emitter voltage VCEO -20 VEmitter-base voltage VEBO -6 VCollector current IC -5

SMD Type TransistorsPNP Transistors2SB13021.70 0.1 Features Low collector-to-emitter saturation voltage. Large current capacity.0.42 0.1 Fast switching speed. 0.46 0.11.Base2.Collector3.Emitter Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Collector - Base Voltage VCBO -25 Collector - Emitter Voltage VCEO -20 V Emitter - Base V

SMD Type TransistorsPNP Transistors2SB13081.70 0.1 Features Power Transistor Excellent DC current Gain Low Collector-emitter Saturation Voltage0.42 0.10.46 0.11.Base2.Collector3.Emitter Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Collector - Base Voltage VCBO -30 Collector - Emitter Voltage VCEO -20 V Emitter - Base Voltage

SMD Type TransistorsPNP Transistors2SB13941.70 0.1 Features Contains diode between collector and emitter. Low saturation voltage.0.42 0.10.46 0.1 Large current capacity. Complementary to 2SD20991.Base2.Collector3.Emitter Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Collector - Base Voltage VCBO -40 Collector - Emitter Vo

SMD Type TransistorsPNP Transistors2SB13241.70 0.1 Features Contains diode between collector and emitter. Low saturation voltage.Collector Large current capacity.0.42 0.10.46 0.1 Complementary to 2SD1998 Base1.Base2.CollectorRBE3.EmitterEmitter Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Collector - Base Voltage V

SMD Type TransistorsPower Transistor2SB1308FeaturesLow saturation voltage, typicallyVCE(sat) = -0.45V (Max.) at IC/IB = -1.5A / -0.15A.Excellent DC current gain characteristics.Absolute Maximum Ratings Ta = 25Parameter Symbol Rating UnitCollector-base voltage VCBO -30 VCollector-emitter voltage VCEO -20 VEmitter-base voltage VEBO -6 VCollector current IC -3 ACollector

CHENMKO ENTERPRISE CO.,LTD2SB1386PGPSMALL FLAT PNP Epitaxial Transistor VOLTAGE 20 Volts CURRENT 5 AmperesAPPLICATION* Power driver and Strobe Flash .FEATURE* Small flat package. (DPAK)DPAK* Low saturation voltage VCE(sat)=-0.35V(Typ.)(IC/IB=-4A/-0.1A) * High saturation current capability..094 (2.38).086 (2.19).022 (0.55).018 (0.45)MARKING* hFE Classification P

CHENMKO ENTERPRISE CO.,LTD2SB1386GPSMALL FLAT PNP Epitaxial Transistor VOLTAGE 20 Volts CURRENT 5 AmperesAPPLICATION* Power driver and Strobe Flash .FEATURE* Small flat package. (SC-62/SOT-89)SC-62/SOT-89* Low saturation voltage VCE(sat)=-0.35V(Typ.)(IC/IB=-4A/-0.1A) * PC= 2.0W (mounted on ceramic substrate).* High saturation current capability.4.6MAX. 1.6MAX.1.7MAX.

isc Silicon PNP Power Transistor 2SB1367DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = -100V(Min)(BR)CEOCollector Power Dissipation-: P = 30W@ T = 25C CLow Collector Saturation Voltage-: V = -2.0V(Max)@ (I = -4A, I = -0.4A)CE(sat) C BComplement to Type 2SD2059Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATI

isc Silicon PNP Darlington Power Transistor 2SB1389DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = -60V(Min)(BR)CEOHigh DC Current Gain-: h = 1000(Min)@ (V = -3V, I = -2A)FE CE CMinimum Lot-to-Lot variations for robust device performanceand reliable operationAPPLICATIONSDesigned for low frequency power amplifier applications.ABSOLUTE MAXIMUM RATINGS(T =25

isc Silicon PNP Power Transistor 2SB1372DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = -140V(Min)(BR)CEOGood Linearity of hFEWide Area of Safe OperationComplement to Type 2SD2065Minimum Lot-to-Lot variations for robust device performanceand reliable operationAPPLICATIONSDesigned for high power amplifications.ABSOLUTE MAXIMUM RATINGS(T =25)aSYMB

isc Silicon PNP Power Transistor 2SB1370DESCRIPTIONLow Collector Saturation Voltage-: V = -0.3V(Typ.)@I = -2ACE(sat) CGood Linearity of hFEWide Area of Safe OperationMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for power switching applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE U

isc Silicon PNP Power Transistor 2SB1346DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = -60V(Min)(BR)CEOGood Linearity of hFEWide Area of Safe OperationComplement to Type 2SD2027Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for low frequency and general purposeamplifier applications.ABSOLUTE MAX

isc Silicon PNP Power Transistor 2SB1347DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = -160V(Min)(BR)CEOWide Area of Safe OperationComplement to Type 2SD2029Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSPower amplifier applicationsOptimum for the output stage of a HiFi audio amplifierABSOLUTE MAXIMUM RATING

isc Silicon PNP Power Transistor 2SB1316DESCRIPTIONDarlington connection for high DC current gainBuilt in resistor between base and emitterBuilt in damper diodeComplementary NPN types:2SD1980100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSMotor drivers,LED driver,Power supplyABSOLUTE MAXIMUM RA

isc Silicon PNP Darlington Power Transistor 2SB1342DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = -80V(Min)(BR)CEOHigh DC Current Gain-: h = 1000(Min)@ (V = -3V, I = -2A)FE CE CComplement to Type 2SD1933Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for power amplifier applications.ABSOLUTE MAXIMUM

isc Silicon PNP Darlington Power Transistor 2SB1339DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = -120V(Min)(BR)CEOHigh DC Current Gain-: h =1000(Min)@ (V = -3V, I = -2A)FE CE CMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for low frequency power amplifiers applications.ABSOLUTE MAXIMUM RATINGS(T =25

isc Silicon PNP Darlington Power Transistor 2SB1390DESCRIPTIONCollector-Emitter Sustaining Voltage-: V = -60V(Min)CEO(SUS)High DC Current Gain-: h = 1000(Min)@ (V = -3V, I = -4A)FE CE CMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for low frequency power amplifier applications.ABSOLUTE MAXIMUM RATINGS(T =25

SavantIC Semiconductor Product Specification Silicon PNP Power Transistors 2SB1334A DESCRIPTION With TO-220 package Wide area of safe operation Low collector saturation voltage APPLICATIONS Designed for use in low frequency power amplifier applications PINNING PIN DESCRIPTION1 Emitter Collector;connected to 2mounting base Fig.1 simplified outline (TO-220)

isc Silicon PNP Power Transistor 2SB1353DESCRIPTIONGood Linearity of hFE Collector-Emitter Breakdown Voltage-: V = -120V(Min)(BR)CEOComplement to Type 2SD2033Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for use in high voltage driver applications.ABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VAL

isc Silicon PNP Power Transistor 2SB1361DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = -150V(Min)(BR)CEOWide Area of Safe OperationComplement to Type 2SD2052Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for high power amplifications.ABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV

isc Silicon PNP Darlington Power Transistor 2SB1344DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = -100V(Min)(BR)CEOHigh DC Current Gain-: h = 1000(Min)@ (V = -3V, I = -2A)FE CE CComplement to Type 2SD2025Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for power amplifier applications.ABSOLUTE MAXIMUM

isc Silicon PNP Darlington Power Transistor 2SB1383DESCRIPTIONHigh DC Current Gain: h = 2000(Min.)@ I = -12A, V = -4VFE C CEHigh Collector-Emitter Breakdown Voltage-: V = -120V(Min)(BR)CEOComplement to Type 2SD2083Minimum Lot-to-Lot variations for robust device performanceand reliable operationAPPLICATIONSDesigned for driver of solenoid, motor and generalpurp

isc Silicon PNP Power Transistor 2SB1335DESCRIPTIONHigh Collector Current:: I = -4ACLow Collector Saturation Voltage: V = -1.5V(Max)@I = -3ACE(sat) CWide Area of Safe OperationComplement to Type 2SD1855Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for low frequency power amplifier applications.ABSOLUTE

isc Silicon PNP Power Transistor 2SB1369DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = -180V(Min)(BR)CEOLow Collector Saturation Voltage-: V = -1.0V(Max)@ (I = -0.5A, I = -50mA)CE(sat) C BComplement to Type 2SD2061Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSHigh voltage applications.TV, monitor vertical

isc Silicon PNP Power Transistor 2SB1317DESCRIPTIONGood Linearity of hFEWide Area of Safe OperationHigh DC Current-Gain Bandwidth ProductComplement to Type 2SD1975Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSHigh power amplificationOptimum for the output stage of a Hi-Fi audio amplifier.ABSOLUTE MAXIMUM RATING

isc Silicon PNP Darlington Power Transistor 2SB1341DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = -80V(Min)(BR)CEOHigh DC Current Gain-: h = 1000(Min)@ (V = -3V, I = -2A)FE CE CMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for power amplifier applications.ABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL P

isc Silicon PNP Darlington Power Transistor 2SB1382DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = -120V(Min)(BR)CEOHigh DC Current Gain-: h = 2000( Min.) @(I = -8A, V = -4V)FE C CELow Collector Saturation Voltage-: V = -1.5V(Max)@ (I = -8A, I = -16mA)CE(sat) C BComplement to Type 2SD2082Minimum Lot-to-Lot variations for robust device performanceand reli

isc Silicon PNP Power Transistor 2SB1362DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = -150V(Min)(BR)CEOWide Area of Safe OperationComplement to Type 2SD2053Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for high power amplifications.ABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV

isc Silicon PNP Power Transistor 2SB1366DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = -60V(Min)(BR)CEOCollector Power Dissipation-: P = 25 W@ T = 25C CLow Collector Saturation Voltage-: V = -1.0V(Max)@ (I = -2A, I = -0.2A)CE(sat) C BComplement to Type 2SD2058Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATI

isc Silicon PNP Darlington Power Transistor 2SB1343DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = -100V(Min)(BR)CEOHigh DC Current Gain-: h = 1000(Min)@ (V = -3V, I = -2A)FE CE CMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for power amplifier applications.ABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL

isc Silicon PNP Power Transistor 2SB1393DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = -60V(Min.)(BR)CEOGood Linearity of hFELow Collector Saturation Voltage-: V = -1.2V(Max,)@ I = -3ACE(sat) CComplement to Type 2SD1985Minimum Lot-to-Lot variations for robust device performanceand reliable operationAPPLICATIONSDesigned for high power amplifications.

isc Silicon PNP Darlington Power Transistor 2SB1381DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = -100V(Min)(BR)CEOHigh DC Current Gain-: h = 1500(Min)@ (V = -3V, I = -2.5A)FE CE CLow Collector Saturation Voltage-: V = -1.5V(Max)@ (I = -2.5A, I = -5mA)CE(sat) C BComplement to Type 2SD2079Minimum Lot-to-Lot variations for robust device performanceand rel

isc Silicon PNP Darlington Power Transistor 2SB1340DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = -120V(Min)(BR)CEOHigh DC Current Gain-: h = 2000(Min)@ (V = -3V, I = -2A)FE CE CComplement to Type 2SD1889APPLICATIONSDesigned for power amplifier applications.ABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Collector-Base Voltage -120 VCB

isc Silicon PNP Power Transistor 2SB1375DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = -60V(Min)(BR)CEOCollector Power Dissipation-: P = 25 W@ T = 25C CLow Collector Saturation Voltage-: V = -1.5V(Max)@ (I = -2A, I = -0.2A)CE(sat) C BComplement to Type 2SD2012Minimum Lot-to-Lot variations for robust device performanceand reliable operationAPPLICATI

isc Silicon PNP Power Transistor 2SB1334DESCRIPTIONHigh Collector Current:: I = -4ACLow Collector Saturation Voltage: V = -1.5V(Max)@I = -3ACE(sat) CWide Area of Safe OperationComplement to Type 2SD1778Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for low frequency power amplifier applications.ABSOLUTE

isc Silicon PNP Power Transistor 2SB1368DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = -80V(Min)(BR)CEOCollector Power Dissipation-: P = 25W@ T = 25C CLow Collector Saturation Voltage-: V = -1.7V(Max)@ (I = -3A, I = -0.3A)CE(sat) C BComplement to Type 2SD2060Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIO

isc Silicon PNP Power Transistor 2SB1371DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = -120V(Min)(BR)CEOGood Linearity of hFEWide Area of Safe OperationComplement to Type 2SD2064Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for high power amplifications.ABSOLUTE MAXIMUM RATINGS(T =25)aSYMB

Inchange Semiconductor Product Specification Silicon PNP Power Transistors 2SB1393 2SB1393A DESCRIPTION With TO-220Fa package Satisfactory linearity of hFE Low collector to emitter saturation voltage Complement to type 2SD1985/1985A APPLICATIONS For power amplification PINNING PIN DESCRIPTION1 Base 2 CollectorFig.1 simplified outline (TO-220Fa) and symbol3

isc Silicon PNP Power Transistor 2SB1373DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = -160V(Min)(BR)CEOWide Area of Safe OperationComplement to Type 2SD2066Minimum Lot-to-Lot variations for robust device performanceand reliable operationAPPLICATIONSDesigned for high power amplifications.ABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV

isc Silicon PNP Power Transistor 2SB1345DESCRIPTIONLow Collector Saturation Voltage-: V = -2.0V(Min) @I = -5ACE(sat) CGood Linearity of hFEComplement to Type 2SD2062With TO-3PN packageMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSPower driver and general purpose applicationsABSOLUTE MAXIMUM RATINGS(T =25)a

isc Silicon PNP Power Transistor 2SB1392DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = -60V(Min.)(BR)CEOGood Linearity of hFEMinimum Lot-to-Lot variations for robust device performanceand reliable operationAPPLICATIONSDesigned for low frequency power amplifier applications.ABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Collector-Base Vo

isc Silicon PNP Darlington Power Transistor 2SB1391DESCRIPTIONCollector-Emitter Sustaining Voltage-: V = -120V(Min)CEO(SUS)High DC Current Gain-: h = 1000(Min)@ (V = -3V, I = -4A)FE CE CMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for power switching applications.ABSOLUTE MAXIMUM RATINGS(T =25)aSYMBO

isc Silicon PNP Power Transistor 2SB1315DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = -120V(Min)(BR)CEOGood Linearity of hFEComplement to Type 2SD1977Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSAudio frequency power amplifier applicationsRecommend for 45-55W audio frequency amplifieroutput stage applic