2SB13 - описание и поиск аналогов

This product complies with the RoHS Directive (EU 2002/95/EC). Power Transistors 2SB1322 Silicon PNP epitaxial planar type For low frequency power amplification Complementary to 2SD1994 Package Features Code Allowing supply with the radial taping MT-2-A1 Absolute Maximum Ratings Ta = 25 C Pin Name 1. Emitter Parameter Symbol Rating Unit 2. Collector

Maintenance/ Discontinued Maintenance/Discontinued includes following four Product lifecycle stage. (planed maintenance type, maintenance type, planed discontinued typed, discontinued type) Maintenance/ Discontinued Maintenance/Discontinued includes following four Product lifecycle stage. (planed maintenance type, maintenance type, planed discontinued typed, discontinued type) Mainten

Ordering number EN2911 PNP Epitaxial Planar Silicon Transistor 2SB1396 DC-DC Converter, Motor Driver Applications Features Package Dimensions Adoption of FBET, MBIT processes. unit mm Large current capacity. 2038 Low collector-to-emitter saturation voltage. [2SB1396] Small size making it easy to provide high-density, small-sized hybrid ICs. E Emitter C Collecto

Ordering number EN2555B 2SB1302 SANYO Semiconductors DATA SHEET PNP Epitaxial Planar Silicon Transistor 2SB1302 High-Current Switching Applications Applications DC-DC converters, motor drivers, relay drivers, lamp drivers. Features Adoption of FBET, MBIT processes. Low collector-to-emitter saturation voltage. Large current capacity. Fast switching speed.

Ordering number EN2910 PNP Epitaxial Planar Silicon Transistor 2SB1395 DC-DC Converter, Motor Driver Applications Features Package Dimensions Adoption of FBET, MBIT processes. unit mm Large current capacity. 2003A Low collector-to-emitter saturation voltage. [2SB1395] JEDEC TO-92 EIAJ SC-43 SANYO NP B Base C Collector E Emitter Specifications Absolute Max

Appendix Notes No technical content pages of this document may be reproduced in any form or transmitted by any means without prior permission of ROHM CO.,LTD. The contents described herein are subject to change without notice. The specifications for the product described in this document are for reference only. Upon actual use, therefore, please request that specifications to be sep

2SB1580 / 2SB1316 / 2SB1567 Transistors Power Transistor (-100V , -2A) 2SB1580 / 2SB1316 / 2SB1567 Features External dimensions (Units mm) 1) Darlington connection for high DC current gain. 2SB1580 4.0 2) Built-in resistor between base and emitter. 1.0 2.5 0.5 3) Built-in damper diode. (1) 4) Complements the 2SD2195 / 2SD1980 / 2SD2398. (2) (3) (1) Base(Gate) (2) Collector(Dr

2SB1370 Transistors Transistors 2SB1655 / 2SB1565 (94L-411-B303) (94L-456-B349) 319

2SB1316 Transistors Power Transistor (-100V , -2A) 2SB1316 External dimensions (Unit mm) Features 1) Darlington connection for high DC current gain. 2SB1580 4.0 2) Built-in resistor between base and emitter. 1.0 2.5 0.5 3) Built-in damper diode. (1) 4) Complements the 2SD2195 / 2SD1980. (2) (3) (1) Base (2) Collector Absolute maximum ratings (Ta = 25 C) ROHM

2SB1474 / 2SB1342 Transistors Transistors 2SD1933 (94S-181-B400) (94L-906-D400) 298

Appendix Notes No technical content pages of this document may be reproduced in any form or transmitted by any means without prior permission of ROHM CO.,LTD. The contents described herein are subject to change without notice. The specifications for the product described in this document are for reference only. Upon actual use, therefore, please request that specifications to be sep

2SB1344 Transistors Transistors 2SD2025 (94L-374-B403) (94L-969-D403) 299

2SB1335 Transistors Transistors 2SD1855 (94L-356-B14) (94L-878-D14) 279

Transistors Low Frequency Transistor (*20V,*5A) 2SB1386 / 2SB1412 / 2SB1326 / 2SB1436 FFeatures FExternal dimensions (Units mm) 1) Low VCE(sat). VCE(sat) = *0.35V (Typ.) (IC / IB = *4A / *0.1A) 2) Excellent DC current gain charac- teristics. 3) Complements the 2SD2098 / 2SD2118 / 2SD2097 / 2SD2166. FStructure Epitaxial planar type PNP silicon transistor (96-141-B204) 211 Tra

2SB1308 Transistors Transistors 2SD1963 (94S-166-B204) (94S-342-D204) 290

2SB1308 Transistors Transistors 2SD1963 (94S-166-B204) (94S-342-D204) 290 Appendix Notes No technical content pages of this document may be reproduced in any form or transmitted by any means without prior permission of ROHM CO.,LTD. The contents described herein are subject to change without notice. The specifications for the product described in this document are for reference o

2SB1340 Transistors Transistors 2SD1889 (96-650-B88) (96-765-D88) 288

2SB1386 / 2SB1412 / 2SB1326 Transistors Low frequency transistor (-20V, -5A) 2SB1386 / 2SB1412 / 2SB1326 External dimensions (Unit mm) Features 1) Low VCE(sat). 2SB1386 2SB1412 VCE(sat) = -0.35V (Typ.) 2.3+0.2 6.5 0.2 -0.1 4.5+0.2 C0.5 -0.1 5.1+0.2 1.5+0.2 -0.1 0.5 0.1 (IC/IB = -4A / -0.1A) 1.6 0.1 -0.1 2) Excellent DC current gain characteristics. 3) Compleme

MCC TM Micro Commercial Components 2SB1366F-O 20736 Marilla Street Chatsworth Micro Commercial Components CA 91311 2SB1366F-Y Phone (818) 701-4933 Fax (818) 701-4939 Features Epoxy meets UL 94 V-0 flammability rating PNP Silicon Moisure Sensitivity Level 1 Low VCE(SAT) VCE(SAT)=-1.0V(Max.)(IC/IB=-2A/-0.2A) Power Transistors Lead Free Finish/RoHS Compliant (No

MCC TM Micro Commercial Components 2SB1366F-O 20736 Marilla Street Chatsworth Micro Commercial Components CA 91311 2SB1366F-Y Phone (818) 701-4933 Fax (818) 701-4939 Features Epoxy meets UL 94 V-0 flammability rating PNP Silicon Moisure Sensitivity Level 1 Low VCE(SAT) VCE(SAT)=-1.0V(Max.)(IC/IB=-2A/-0.2A) Power Transistors Lead Free Finish/RoHS Compliant (No

Ordering number EN2555C 2SB1302 Bipolar Transisitor http //onsemi.com ( ) 20V, 5A, Low VCE sat PNP Single PCP Applicaitons DC-DC converters, motor drivers, relay drivers, lamp drivers Features Adoption of FBET, MBIT processes Low collector to emitter saturation voltage Large current capacity Fast switching speed Ultrasmall size making it easy to

Ordering number EN2555C 2SB1302 Bipolar Transisitor http //onsemi.com ( ) 20V, 5A, Low VCE sat PNP Single PCP Applicaitons DC-DC converters, motor drivers, relay drivers, lamp drivers Features Adoption of FBET, MBIT processes Low collector to emitter saturation voltage Large current capacity Fast switching speed Ultrasmall size making it easy to

Transistor 2SB1322A Silicon PNP epitaxial planer type For low-frequency power amplification Unit mm Complementary to 2SD1994A 2.5 0.1 1.05 6.9 0.1 0.05 (1.45) 0.7 4.0 0.8 Features Allowing supply with the radial taping. 0.65 max. Absolute Maximum Ratings (Ta=25 C) +0.1 0.45 0.05 Parameter Symbol Ratings Unit 2.5 0.5 2.5 0.5 Collector to base voltage VCBO 60

Transistor 2SB1319 Silicon PNP epitaxial planer type For low-frequency power amplification Unit mm 6.9 0.1 2.5 0.1 1.5 1.5 R0.9 1.0 Features R0.9 Low collector to emitter saturation voltage VCE(sat). Large collector current IC. M type package allowing easy automatic and manual insertion as well as stand-alone fixing to the printed circuit board. 0.85 0.55 0.1 0.45 0.05

Transistor 2SB1378 Silicon PNP epitaxial planer type For low-frequency power amplification Unit mm Complementary to 2SD1996 6.9 0.1 1.05 2.5 0.1 0.05 (1.45) 0.7 4.0 0.8 Features Low collector to emitter saturation voltage VCE(sat). Optimum for low-voltage operation and for converters. 0.65 max. Allowing supply with the radial taping. +0.1 0.45 0.05 Absolute Maximum R

Power Transistors 2SB1347 Silicon PNP triple diffusion planar type For high power amplification Unit mm Complementary to 2SD2029 3.3 0.2 20.0 0.5 5.0 0.3 3.0 Features Satisfactory foward current transfer ratio hFE vs. collector cur- rent IC characteristics Wide area of safe operation (ASO) 1.5 High transition frequency fT Optimum for the output stage of a HiFi audio am

Transistors 2SB1322A Silicon PNP epitaxial planer type Unit mm 2.5 0.1 1.05 For low-frequency power amplification 6.9 0.1 0.05 (1.45) 0.7 4.0 0.8 Complementary to 2SD1994A Features 0.65 max. Allowing supply with the radial taping +0.1 0.45-0.05 Absolute Maximum Ratings Ta = 25 C 2.5 0.5 2.5 0.5 1 2 3 Parameter Symbol Rating Unit Collector to base voltage VCBO -

Transistor 2SB1320A Silicon PNP epitaxial planer type For general amplification Unit mm Complementary to 2SD1991A 6.9 0.1 1.05 2.5 0.1 0.05 (1.45) 0.7 4.0 0.8 Features High foward current transfer ratio hFE. Allowing supply with the radial taping. 0.65 max. +0.1 0.45 0.05 Absolute Maximum Ratings (Ta=25 C) 2.5 0.5 2.5 0.5 Parameter Symbol Ratings Unit 1 2 3 C

Transistors 2SB1320A Silicon PNP epitaxial planer type Unit mm For general amplification 6.9 0.1 1.05 2.5 0.1 0.05 (1.45) 0.7 4.0 0.8 Complementary to 2SD1991A Features 0.65 max. High forward current transfer ratio hFE Allowing supply with the radial taping +0.1 0.45-0.05 2.5 0.5 2.5 0.5 Absolute Maximum Ratings Ta = 25 C 1 2 3 Parameter Symbol Rating Unit

Power Transistors 2SB1361 Silicon PNP triple diffusion planar type For high power amplification Unit mm Complementary to 2SD2052 15.0 0.3 5.0 0.2 Features 11.0 0.2 3.2 Satisfactory foward current transfer ratio hFE vs. collector cur- rent IC characteristics 3.2 0.1 Wide area of safe operation (ASO) High transition frequency fT Full-pack package which can be installed t

Transistor 2SB1321A Silicon PNP epitaxial planer type For low-frequency output amplification and driver amplification Unit mm Complementary to 2SD1992A 6.9 0.1 1.05 2.5 0.1 0.05 (1.45) 0.7 4.0 0.8 Features Allowing supply with the radial taping. Large collector power dissipation PC. (600mW) 0.65 max. +0.1 0.45 0.05 Absolute Maximum Ratings (Ta=25 C) 2.5 0.5 2.5

Power Transistors 2SB1317 Silicon PNP triple diffusion planar type For high power amplification Unit mm Complementary to 2SD1975 3.3 0.2 20.0 0.5 5.0 0.3 3.0 Features Satisfactory foward current transfer ratio hFE vs. collector cur- rent IC characteristics Wide area of safe operation (ASO) 1.5 High transition frequency fT Optimum for the output stage of a HiFi audio am

Transistor 2SB1377 Silicon PNP epitaxial planer type For low-frequency power amplification and driver amplification Unit mm Complementary to 2SD2071 2.5 0.1 1.05 6.9 0.1 0.05 (1.45) 0.7 4.0 0.8 Features Allowing supply with the radial taping. 0.65 max. Absolute Maximum Ratings (Ta=25 C) +0.1 0.45 0.05 Parameter Symbol Ratings Unit 2.5 0.5 2.5 0.5 Collector to b

Transistors 2SB1321A Silicon PNP epitaxial planer type Unit mm 6.9 0.1 1.05 2.5 0.1 For general amplification 0.05 (1.45) 0.7 4.0 0.8 Complementary to 2SD1992A Features 0.65 max. Large collector power dissipation PC (600 mW) Allowing supply with the radial taping +0.1 0.45-0.05 2.5 0.5 2.5 0.5 Absolute Maximum Ratings Ta = 25 C 1 2 3 Parameter Symbol Rating

Transistor 2SB1319 Silicon PNP epitaxial planer type For low-frequency power amplification Unit mm 6.9 0.1 2.5 0.1 1.5 1.5 R0.9 1.0 Features R0.9 Low collector to emitter saturation voltage VCE(sat). Large collector current IC. M type package allowing easy automatic and manual insertion as well as stand-alone fixing to the printed circuit board. 0.85 0.55 0.1 0.45 0.05

Transistor 2SB1398 Silicon PNP epitaxial planer type For low-frequency output amplification Unit mm 2.5 0.1 1.05 6.9 0.1 0.05 (1.45) 0.7 4.0 0.8 Features Low collector to emitter saturation voltage VCE(sat). Large collector current IC. 0.65 max. Allowing supply with the radial taping. +0.1 Absolute Maximum Ratings (Ta=25 C) 0.45 0.05 2.5 0.5 2.5 0.5 Parameter Sy

Transistor 2SB1378 Silicon PNP epitaxial planer type For low-frequency power amplification Unit mm Complementary to 2SD1996 6.9 0.1 1.05 2.5 0.1 0.05 (1.45) 0.7 4.0 0.8 Features Low collector to emitter saturation voltage VCE(sat). Optimum for low-voltage operation and for converters. 0.65 max. Allowing supply with the radial taping. +0.1 0.45 0.05 Absolute Maximum R

Power Transistors 2SB1371 Silicon PNP triple diffusion planar type For high power amplification Unit mm Complementary to 2SD2064 15.0 0.3 5.0 0.2 Features 11.0 0.2 3.2 Satisfactory foward current transfer ratio hFE vs. collector cur- rent IC characteristics 3.2 0.1 Wide area of safe operation (ASO) High transition frequency fT Full-pack package which can be installed t

Transistor 2SB1398 Silicon PNP epitaxial planer type For low-frequency output amplification Unit mm 2.5 0.1 1.05 6.9 0.1 0.05 (1.45) 0.7 4.0 0.8 Features Low collector to emitter saturation voltage VCE(sat). Large collector current IC. 0.65 max. Allowing supply with the radial taping. +0.1 Absolute Maximum Ratings (Ta=25 C) 0.45 0.05 2.5 0.5 2.5 0.5 Parameter Sy

UNISONIC TECHNOLOGIES CO., LTD 2SB1386 PNP SILICON TRANSISTOR LOW FREQUENCY PNP TRANSISTOR FEATURES * Excellent DC current gain characteristics * Low VCE(SAT) VCE(SAT)= -0.35V (Typ) (IC/IB = -4A/-0.1A) ORDERING INFORMATION Pin Assignment Order Number Package Packing 1 2 3 2SB1386G-x-AB3-R SOT-89 B C E Tape Reel Note Pin Assignment B Base C Collector E Emit

2SB1389 Silicon PNP Triple Diffused Application Low frequency power amplifier Outline TO-220FM 2 1 1. Base ID 2. Collector 3. Emitter 1 4.5 k 500 2 3 (Typ) (Typ) 3 2SB1389 Absolute Maximum Ratings (Ta = 25 C) Item Symbol Ratings Unit Collector to base voltage VCBO 60 V Collector to emitter voltage VCEO 60 V Emitter to base voltage VEBO 7 V Collector cur

2SB1390 Silicon PNP Triple Diffused Application Low frequency power amplifier Outline TO-220FM 2 1 1. Base ID 2. Collector 3. Emitter 1 4 k 200 2 3 (Typ) (Typ) 3 2SB1390 Absolute Maximum Ratings (Ta = 25 C) Item Symbol Ratings Unit Collector to base voltage VCBO 60 V Collector to emitter voltage VCEO 60 V Emitter to base voltage VEBO 7 V Collector curre

2SB1399 Silicon PNP Triple Diffused Application Low frequency power amplifier Outline TO-220FM 2 1 1. Base ID 2. Collector 3. Emitter 1 2 1.0 k 200 3 (Typ) (Typ) 3 2SB1399 Absolute Maximum Ratings (Ta = 25 C) Item Symbol Ratings Unit Collector to base voltage VCBO 120 V Collector to emitter voltage VCEO 120 V Emitter to base voltage VEBO 7 V Collector cu

To all our customers Regarding the change of names mentioned in the document, such as Hitachi Electric and Hitachi XX, to Renesas Technology Corp. The semiconductor operations of Mitsubishi Electric and Hitachi were transferred to Renesas Technology Corporation on April 1st 2003. These operations include microcomputer, logic, analog and discrete devices, and memory chips other than DRAM

2SB1391 Silicon PNP Triple Diffused Application Power switching Outline TO-220FM 2 1 1. Base 2. Collector 3. Emitter 1 2 k 200 2 3 (Typ) (Typ) 3 2SB1391 Absolute Maximum Ratings (Ta = 25 C) Item Symbol Ratings Unit Collector to base voltage VCBO 120 V Collector to emitter voltage VCEO 120 V Emitter to base voltage VEBO 7 V Collector current IC 8 A Co

2SB1322A -1A , -60V PNP Plastic Encapsulated Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of -C specifies halogen & lead-free TO-92 FEATURES G H Allow Supply with The Radial Taping Emitter Collector Base J A D CLASSIFICATION OF hFE (1) Millimeter REF. Min. Max. Product-Rank 2SB1322A-Q 2SB1322A-R 2SB1322A-S B A 4.40 4.70

2SB1386 -5A, -30V PNP Silicon Low Frequency Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of -C specifies halogen & lead-free SOT-89 FEATURES Low VCE(sat) 4 Excellent DC current gain characteristics Complements the 2SD2098 1 2 3 A E C CLASSIFICATION OF hFE Product-Rank 2SB1386-P 2SB1386-Q 2SB1386-R B D Range 82 180 120 270 180 39

ISAHAYA ELECTRONICS CORPORATION ISAHAYA ELECTRONICS CORPORATION http //www.idc-com.co.jp 6-41, TSUKUBA, ISAHAYA, NAGASAKI, 854-0065, JAPAN Keep safety in your circuit designs ! Isahaya Electronics Corporation puts the maximum effort into making semiconductor products better and more reliable, but there is always the possibility that trouble may occur with them. Trouble with

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-89-3L Plastic-Encapsulate Transistors 2SB1386 TRANSISTOR (PNP) SOT-89-3L FEATURES Low collector saturation voltage 1. BASE Execllent current-to-gain characteristics 2. COLLECTOR MAXIMUM RATINGS (Ta=25 unless otherwise noted) 3. EMITTER Symbol Parameter Value Unit VCBO -30 V Collector-Base Voltage VCEO Col

JMnic Product Specification Silicon PNP Power Transistors 2SB1389 DESCRIPTION With TO-220Fa package High DC current gain Low saturation voltage DARLINGTON APPLICATIONS For use in low frequency power amplifier applications PINNING PIN DESCRIPTION 1 Base 2 Collector Fig.1 simplified outline (TO-220Fa) and symbol 3 Emitter Absolute maximum ratings(Ta=25 )

JMnic Product Specification Silicon PNP Power Transistors 2SB1393 2SB1393A DESCRIPTION With TO-220Fa package Satisfactory linearity of hFE Low collector to emitter saturation voltage Complement to type 2SD1985/1985A APPLICATIONS For power amplification PINNING PIN DESCRIPTION 1 Base 2 Collector Fig.1 simplified outline (TO-220Fa) and symbol 3 Emitter Absolute

JMnic Product Specification Silicon PNP Power Transistors 2SB1393 2SB1393A DESCRIPTION With TO-220Fa package Satisfactory linearity of hFE Low collector to emitter saturation voltage Complement to type 2SD1985/1985A APPLICATIONS For power amplification PINNING PIN DESCRIPTION 1 Base 2 Collector Fig.1 simplified outline (TO-220Fa) and symbol 3 Emitter Absolute

JMnic Product Specification Silicon PNP Power Transistors 2SB1381 DESCRIPTION With TO-220F package Complement to type 2SD2079 Low collector saturation voltage High DC current gain APPLICATIONS High power switching applications Hammer drive,pulse motor drive applications PINNING PIN DESCRIPTION 1 Base 2 Collector Fig.1 simplified outline (TO-220F) and symbol

JMnic Product Specification Silicon PNP Power Transistors 2SB1375 DESCRIPTION With TO-220F package Complement to type 2SD2012 Low collector saturation voltage VCE(SAT)=-1.5V(Max) at IC=-2A,IB=-0.2A Collector power dissipation PC=25W(TC=25 ) APPLICATIONS Audio frequency power amplifier PINNING PIN DESCRIPTION 1 Base 2 Collector Fig.1 simplified outline (

JMnic Product Specification Silicon PNP Power Transistors 2SB1371 DESCRIPTION With TO-3PFa package Complement to type 2SD2064 High transition frequency Satisfactory linearity of hFE APPLICATIONS For high power amplification PINNING PIN DESCRIPTION 1 Base 2 Collector 3 Emitter Absolute maximum ratings(Ta=25 ) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO C

E (2k )(100 ) B Darlington 2SB1352 Equivalent circuit C Silicon PNP Epitaxial Planar Transistor Application Driver for Printer Head, Solenoid, Relay, Motor and General Purpose External Dimensions FM100(TO3PF) Absolute maximum ratings (Ta=25 C) Electrical Characteristics (Ta=25 C) Symbol 2SB1352 Unit Symbol Conditions 2SB1352 Unit 0.2 0.2 5.5 15.6 0.2 3.45 VCBO

E (2k ) (80 ) B Darlington 2SB1383 Equivalent circuit C Silicon PNP Epitaxial Planar Transistor (Complement to type 2SD2083) Application Chopper Regulator, DC Motor Driver and General Purpose External Dimensions MT-100(TO3P) Absolute maximum ratings (Ta=25 C) Electrical Characteristics (Ta=25 C) Symbol Ratings Conditions Ratings Unit Unit Symbol 0.2 4.8 0.4 15.6 0

E (2k ) (80 ) B Darlington 2SB1382 Equivalent circuit C Silicon PNP Epitaxial Planar Transistor (Complement to type 2SD2082) Application Chopper Regulator, DC Motor Driver and General Purpose External Dimensions FM100(TO3PF) Absolute maximum ratings (Ta=25 C) Electrical Characteristics (Ta=25 C) Symbol Ratings Symbol Conditions Ratings Unit Unit 0.2 0.2 5.5 15.6 0.

E (2k )(100 ) B Darlington 2SB1351 Equivalent circuit C Silicon PNP Epitaxial Planar Transistor Application Driver for Printer Head, Solenoid, Relay, Motor and General Purpose Absolute maximum ratings (Ta=25 C) Electrical Characteristics (Ta=25 C) External Dimensions FM20(TO220F) Symbol Ratings Unit Symbol Condition Ratings Unit 0.2 4.2 0.2 10.1 c0.5 2.8 VCBO 60

2SB1 38 6 TRANSISTOR(PNP) FEATURES Low collector saturation voltage, Execllent current-to-gain characteristics MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter Value Units VCBO -30 V Collector-Base Voltage VCEO Collector-Emitter Voltage -20 V VEBO Emitter-Base Voltage -6 V IC Collector Current -Continuous -5 A PC Collector Power Dissipation 0.5 W TJ J

2SB1 308 TRANSISTOR SOT-89-3L 1. BASE FEATURES 2. COLLECTOR Power Transistor Excellent DC current Gain 3. EMITTER Low Collector-emitter Saturation Voltage MAXIMUM RATINGS (Ta=25 unless otherwise noted) Symbol Parameter Value Unit VCBO Collector-Base Voltage -30 V VCEO Collector-Emitter Voltage -20 V VEBO Emitter-Base Voltage -6 V IC Collector Current -3 A PC C

2SB1370(PNP) TO-220F Bipolar Transistors TO-220F 1. BASE 2. COLLECTOR 3. EMITTE 1 2 3 Features Breakdown Voltage High Reverse Cut-off Current Small Saturation Voltage Low Collector Power dissipation PCM 2 W (Tamb=25 ) 30 W (Tcase=25 ) Dimensions in inches and (millimeters) MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter Value Units

2SB1386 SOT-89 Transistor(PNP) 1. BASE SOT-89 1 2. COLLECTOR 4.6 B 4.4 2 1.6 1.8 1.4 1.4 3. EMITTER 3 2.6 4.25 2.4 3.75 Features 0.8 MIN Low collector saturation voltage, 0.53 0.40 0.48 0.44 2x) 0.13 B 0.35 Execllent current-to-gain characteristics 0.37 1.5 3.0 MAXIMUM RATINGS (TA=25 unless otherwise noted) Dimensions in inches and (millimeters

2SB1375(PNP) TO-220 Transistor TO-220 1. BASE 2. COLLECTOR 3. EMITTER 3 2 1 Features High Power Dissipation PC=25W(TC=25 ) Low voltage VCE(sat)=-1.5V(Max)(IC=-2A,IB=-0.2A) Collector metal(Fin)is Coverd with Mold Regin Complementary to 2SD2012 MAXIMUM RATINGS (TA=25 unless otherwise noted ) Dimensions in inches and (millimeters) Symbol Parameter

2SB1386 PNP EPITAXIAL PLANAR TRANSISTOR P b Lead(Pb)-Free 1. BASE 2. COLLECTOR 3. EMITTER 1 2 3 Features SOT-89 * Excellent DC Current Gain Characteristics * Low VCE(Sat) Mechanical Data * Case Molded Plastic ABSOLUTE MAXIMUM RATINGS(TA=25 C) Rating Symbol Value Unit VCBO -30 V Collector to Base Voltage VCEO -20 V Collector to Emitter Voltage V VEBO -6 Collector to

FM120-M WILLAS 2SB1386THRU SOT-89 Plastic-Encapsulate Transistors FM1200-M 1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200V SOD-123 PACKAGE Pb Free Product Package outline Features Batch process d TRANSISTOR (PNP) eesign, excellent power dissipation offers better reverse l akage current and thermal resistance. SOD-123H SOT-89 Low p FEATURES mirofile surf

FM120-M WILLAS THRU 2SB1308 SOT-89 Plastic-Encapsulate Transistors FM1200-M 1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200V SOD-123 PACKAGE Pb Free Product Pa c kage outline Features TRANSISTOR (PNP) esign, excellent power dissipation offers Batch process d SOT-89 better reverse leakage current and thermal resistance. FEATURES SOD-123H Low p Powe

ST 2SB1386U PNP Silicon Epitaxial Planar Transistor Low frequency transistor Absolute Maximum Ratings (Ta = 25 ) Parameter Symbol Value Unit Collector Base Voltage -VCBO 30 V Collector Emitter Voltage -VCEO 20 V Emitter Base Voltage -VEBO 6 V Collector Current - DC -IC 5 A Collector Current - Pulse 1) -ICP 10 0.5 PC W Collector Power Dissipation 2 2) Junction Tempera

SMD Type Transistors PNP Transistors 2SB1323 1.70 0.1 Features Contains diode between collector and emitter. Low saturation voltage. 0.42 0.1 0.46 0.1 Large current capacity. Complementary to 2SD1997 1.Base 2.Collector 3.Emitter Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector - Base Voltage VCBO -40 Collector - Emitter Vo

SMD Type Transistors PNP Transistors 2SB1396 1.70 0.1 Features Low collector to emitter saturation voltage Large current capacity 0.42 0.1 0.46 0.1 1.Base 2.Collector 3.Emitter Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector - Base Voltage VCBO -15 Collector - Emitter Voltage VCEO -10 V Emitter - Base Voltage VEBO -7 Collector Cu

SMD Type Transistors Power Transistor 2SB1308 Features Low saturation voltage, typically VCE(sat) = -0.45V (Max.) at IC/IB = -1.5A / -0.15A. Excellent DC current gain characteristics. Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector-base voltage VCBO -30 V Collector-emitter voltage VCEO -20 V Emitter-base voltage VEBO -6 V Collector current IC -3 A Collector

SMD Type Transistors PNP Transistors 2SB1325 1.70 0.1 Features Contains diode between collector and emitter. Low saturation voltage. Collector Large current capacity. 0.42 0.1 0.46 0.1 Complementary to 2SD1999 Base 1.Base 2.Collector RBE 3.Emitter Emitter Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector - Base Voltage V

SMD Type Transistors PNP Transistors 2SB1397 1.70 0.1 Features Low collector to emitter saturation voltage Large current capacity Complementary to 2SD2100 Collector 0.42 0.1 0.46 0.1 Base 1.Base 2.Collector RBE 3.Emitter Emitter Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector - Base Voltage VCBO -25 Collector - Emitter Volt

SMD Type Transistors Low Frequency Transistor 2SB1386 Features Low VCE(sat). VCE(sat) = -0.35V (Typ.) (IC/IB = -4A / -0.1A) Excellent DC current gain Epitaxial planar type PNP silicon transistor Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector-base voltage VCBO -30 V Collector-emitter voltage VCEO -20 V Emitter-base voltage VEBO -6 V Collector current IC -5

SMD Type Transistors Low Frequency Transistor 2SB1386 Features Low VCE(sat). VCE(sat) = -0.35V (Typ.) (IC/IB = -4A / -0.1A) Excellent DC current gain Epitaxial planar type PNP silicon transistor Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector-base voltage VCBO -30 V Collector-emitter voltage VCEO -20 V Emitter-base voltage VEBO -6 V Collector current IC -5

SMD Type Transistors PNP Transistors 2SB1386 Features 1.70 0.1 Low VCE(sat). VCE(sat) = -0.35V (Typ.) (IC/IB = -4A / -0.1A) Excellent DC current gain Epitaxial planar type 0.42 0.1 0.46 0.1 PNP silicon transistor 1.Base 2.Collector 3.Emitter Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector-base voltage VCBO -30 V Collector-emitter voltage VCEO -20 V E

SMD Type Transistors Power Transistor 2SB1308 Features Low saturation voltage, typically VCE(sat) = -0.45V (Max.) at IC/IB = -1.5A / -0.15A. Excellent DC current gain characteristics. Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector-base voltage VCBO -30 V Collector-emitter voltage VCEO -20 V Emitter-base voltage VEBO -6 V Collector current IC -3 A Collector

SMD Type Transistors Low Frequency Transistor 2SB1386 Features Low VCE(sat). VCE(sat) = -0.35V (Typ.) (IC/IB = -4A / -0.1A) Excellent DC current gain Epitaxial planar type PNP silicon transistor Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector-base voltage VCBO -30 V Collector-emitter voltage VCEO -20 V Emitter-base voltage VEBO -6 V Collector current IC -5

SMD Type Transistors PNP Transistors 2SB1302 1.70 0.1 Features Low collector-to-emitter saturation voltage. Large current capacity. 0.42 0.1 Fast switching speed. 0.46 0.1 1.Base 2.Collector 3.Emitter Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector - Base Voltage VCBO -25 Collector - Emitter Voltage VCEO -20 V Emitter - Base V

SMD Type Transistors PNP Transistors 2SB1308 1.70 0.1 Features Power Transistor Excellent DC current Gain Low Collector-emitter Saturation Voltage 0.42 0.1 0.46 0.1 1.Base 2.Collector 3.Emitter Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector - Base Voltage VCBO -30 Collector - Emitter Voltage VCEO -20 V Emitter - Base Voltage

SMD Type Transistors PNP Transistors 2SB1394 1.70 0.1 Features Contains diode between collector and emitter. Low saturation voltage. 0.42 0.1 0.46 0.1 Large current capacity. Complementary to 2SD2099 1.Base 2.Collector 3.Emitter Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector - Base Voltage VCBO -40 Collector - Emitter Vo

SMD Type Transistors PNP Transistors 2SB1324 1.70 0.1 Features Contains diode between collector and emitter. Low saturation voltage. Collector Large current capacity. 0.42 0.1 0.46 0.1 Complementary to 2SD1998 Base 1.Base 2.Collector RBE 3.Emitter Emitter Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector - Base Voltage V

SMD Type Transistors Power Transistor 2SB1308 Features Low saturation voltage, typically VCE(sat) = -0.45V (Max.) at IC/IB = -1.5A / -0.15A. Excellent DC current gain characteristics. Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector-base voltage VCBO -30 V Collector-emitter voltage VCEO -20 V Emitter-base voltage VEBO -6 V Collector current IC -3 A Collector

CHENMKO ENTERPRISE CO.,LTD 2SB1386PGP SMALL FLAT PNP Epitaxial Transistor VOLTAGE 20 Volts CURRENT 5 Amperes APPLICATION * Power driver and Strobe Flash . FEATURE * Small flat package. (DPAK) DPAK * Low saturation voltage VCE(sat)=-0.35V(Typ.)(IC/IB=-4A/-0.1A) * High saturation current capability. .094 (2.38) .086 (2.19) .022 (0.55) .018 (0.45) MARKING * hFE Classification P

CHENMKO ENTERPRISE CO.,LTD 2SB1386GP SMALL FLAT PNP Epitaxial Transistor VOLTAGE 20 Volts CURRENT 5 Amperes APPLICATION * Power driver and Strobe Flash . FEATURE * Small flat package. (SC-62/SOT-89) SC-62/SOT-89 * Low saturation voltage VCE(sat)=-0.35V(Typ.)(IC/IB=-4A/-0.1A) * PC= 2.0W (mounted on ceramic substrate). * High saturation current capability. 4.6MAX. 1.6MAX. 1.7MAX.

isc Silicon PNP Power Transistor 2SB1367 DESCRIPTION Collector-Emitter Breakdown Voltage- V = -100V(Min) (BR)CEO Collector Power Dissipation- P = 30W@ T = 25 C C Low Collector Saturation Voltage- V = -2.0V(Max)@ (I = -4A, I = -0.4A) CE(sat) C B Complement to Type 2SD2059 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATI

isc Silicon PNP Darlington Power Transistor 2SB1389 DESCRIPTION Collector-Emitter Breakdown Voltage- V = -60V(Min) (BR)CEO High DC Current Gain- h = 1000(Min)@ (V = -3V, I = -2A) FE CE C Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for low frequency power amplifier applications. ABSOLUTE MAXIMUM RATINGS(T =25

isc Silicon PNP Power Transistor 2SB1372 DESCRIPTION Collector-Emitter Breakdown Voltage- V = -140V(Min) (BR)CEO Good Linearity of h FE Wide Area of Safe Operation Complement to Type 2SD2065 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for high power amplifications. ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMB

isc Silicon PNP Power Transistor 2SB1370 DESCRIPTION Low Collector Saturation Voltage- V = -0.3V(Typ.)@I = -2A CE(sat) C Good Linearity of h FE Wide Area of Safe Operation Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for power switching applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE U

isc Silicon PNP Power Transistor 2SB1346 DESCRIPTION Collector-Emitter Breakdown Voltage- V = -60V(Min) (BR)CEO Good Linearity of h FE Wide Area of Safe Operation Complement to Type 2SD2027 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for low frequency and general purpose amplifier applications. ABSOLUTE MAX

isc Silicon PNP Power Transistor 2SB1347 DESCRIPTION Collector-Emitter Breakdown Voltage- V = -160V(Min) (BR)CEO Wide Area of Safe Operation Complement to Type 2SD2029 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Power amplifier applications Optimum for the output stage of a HiFi audio amplifier ABSOLUTE MAXIMUM RATING

isc Silicon PNP Power Transistor 2SB1316 DESCRIPTION Darlington connection for high DC current gain Built in resistor between base and emitter Built in damper diode Complementary NPN types 2SD1980 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Motor drivers,LED driver,Power supply ABSOLUTE MAXIMUM RA

isc Silicon PNP Darlington Power Transistor 2SB1342 DESCRIPTION Collector-Emitter Breakdown Voltage- V = -80V(Min) (BR)CEO High DC Current Gain- h = 1000(Min)@ (V = -3V, I = -2A) FE CE C Complement to Type 2SD1933 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for power amplifier applications. ABSOLUTE MAXIMUM

SavantIC Semiconductor Product Specification Silicon PNP Power Transistors 2SB1334A DESCRIPTION With TO-220 package Wide area of safe operation Low collector saturation voltage APPLICATIONS Designed for use in low frequency power amplifier applications PINNING PIN DESCRIPTION 1 Emitter Collector;connected to 2 mounting base Fig.1 simplified outline (TO-220)

isc Silicon PNP Power Transistor 2SB1353 DESCRIPTION Good Linearity of h FE Collector-Emitter Breakdown Voltage- V = -120V(Min) (BR)CEO Complement to Type 2SD2033 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for use in high voltage driver applications. ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VAL

isc Silicon PNP Power Transistor 2SB1361 DESCRIPTION Collector-Emitter Breakdown Voltage- V = -150V(Min) (BR)CEO Wide Area of Safe Operation Complement to Type 2SD2052 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for high power amplifications. ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V

isc Silicon PNP Darlington Power Transistor 2SB1344 DESCRIPTION Collector-Emitter Breakdown Voltage- V = -100V(Min) (BR)CEO High DC Current Gain- h = 1000(Min)@ (V = -3V, I = -2A) FE CE C Complement to Type 2SD2025 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for power amplifier applications. ABSOLUTE MAXIMUM

isc Silicon PNP Darlington Power Transistor 2SB1383 DESCRIPTION High DC Current Gain h = 2000(Min.)@ I = -12A, V = -4V FE C CE High Collector-Emitter Breakdown Voltage- V = -120V(Min) (BR)CEO Complement to Type 2SD2083 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for driver of solenoid, motor and general purp

isc Silicon PNP Power Transistor 2SB1335 DESCRIPTION High Collector Current I = -4A C Low Collector Saturation Voltage V = -1.5V(Max)@I = -3A CE(sat) C Wide Area of Safe Operation Complement to Type 2SD1855 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for low frequency power amplifier applications. ABSOLUTE

isc Silicon PNP Power Transistor 2SB1369 DESCRIPTION Collector-Emitter Breakdown Voltage- V = -180V(Min) (BR)CEO Low Collector Saturation Voltage- V = -1.0V(Max)@ (I = -0.5A, I = -50mA) CE(sat) C B Complement to Type 2SD2061 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS High voltage applications. TV, monitor vertical

isc Silicon PNP Power Transistor 2SB1317 DESCRIPTION Good Linearity of h FE Wide Area of Safe Operation High DC Current-Gain Bandwidth Product Complement to Type 2SD1975 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS High power amplification Optimum for the output stage of a Hi-Fi audio amplifier. ABSOLUTE MAXIMUM RATING

isc Silicon PNP Darlington Power Transistor 2SB1341 DESCRIPTION Collector-Emitter Breakdown Voltage- V = -80V(Min) (BR)CEO High DC Current Gain- h = 1000(Min)@ (V = -3V, I = -2A) FE CE C Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for power amplifier applications. ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL P

isc Silicon PNP Darlington Power Transistor 2SB1382 DESCRIPTION Collector-Emitter Breakdown Voltage- V = -120V(Min) (BR)CEO High DC Current Gain- h = 2000( Min.) @(I = -8A, V = -4V) FE C CE Low Collector Saturation Voltage- V = -1.5V(Max)@ (I = -8A, I = -16mA) CE(sat) C B Complement to Type 2SD2082 Minimum Lot-to-Lot variations for robust device performance and reli

isc Silicon PNP Power Transistor 2SB1362 DESCRIPTION Collector-Emitter Breakdown Voltage- V = -150V(Min) (BR)CEO Wide Area of Safe Operation Complement to Type 2SD2053 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for high power amplifications. ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V

isc Silicon PNP Power Transistor 2SB1366 DESCRIPTION Collector-Emitter Breakdown Voltage- V = -60V(Min) (BR)CEO Collector Power Dissipation- P = 25 W@ T = 25 C C Low Collector Saturation Voltage- V = -1.0V(Max)@ (I = -2A, I = -0.2A) CE(sat) C B Complement to Type 2SD2058 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATI

isc Silicon PNP Darlington Power Transistor 2SB1343 DESCRIPTION Collector-Emitter Breakdown Voltage- V = -100V(Min) (BR)CEO High DC Current Gain- h = 1000(Min)@ (V = -3V, I = -2A) FE CE C Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for power amplifier applications. ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL

isc Silicon PNP Power Transistor 2SB1393 DESCRIPTION Collector-Emitter Breakdown Voltage- V = -60V(Min.) (BR)CEO Good Linearity of h FE Low Collector Saturation Voltage- V = -1.2V(Max,)@ I = -3A CE(sat) C Complement to Type 2SD1985 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for high power amplifications.

isc Silicon PNP Darlington Power Transistor 2SB1381 DESCRIPTION Collector-Emitter Breakdown Voltage- V = -100V(Min) (BR)CEO High DC Current Gain- h = 1500(Min)@ (V = -3V, I = -2.5A) FE CE C Low Collector Saturation Voltage- V = -1.5V(Max)@ (I = -2.5A, I = -5mA) CE(sat) C B Complement to Type 2SD2079 Minimum Lot-to-Lot variations for robust device performance and rel

isc Silicon PNP Darlington Power Transistor 2SB1340 DESCRIPTION Collector-Emitter Breakdown Voltage- V = -120V(Min) (BR)CEO High DC Current Gain- h = 2000(Min)@ (V = -3V, I = -2A) FE CE C Complement to Type 2SD1889 APPLICATIONS Designed for power amplifier applications. ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Collector-Base Voltage -120 V CB

isc Silicon PNP Power Transistor 2SB1375 DESCRIPTION Collector-Emitter Breakdown Voltage- V = -60V(Min) (BR)CEO Collector Power Dissipation- P = 25 W@ T = 25 C C Low Collector Saturation Voltage- V = -1.5V(Max)@ (I = -2A, I = -0.2A) CE(sat) C B Complement to Type 2SD2012 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATI

isc Silicon PNP Power Transistor 2SB1334 DESCRIPTION High Collector Current I = -4A C Low Collector Saturation Voltage V = -1.5V(Max)@I = -3A CE(sat) C Wide Area of Safe Operation Complement to Type 2SD1778 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for low frequency power amplifier applications. ABSOLUTE

isc Silicon PNP Power Transistor 2SB1368 DESCRIPTION Collector-Emitter Breakdown Voltage- V = -80V(Min) (BR)CEO Collector Power Dissipation- P = 25W@ T = 25 C C Low Collector Saturation Voltage- V = -1.7V(Max)@ (I = -3A, I = -0.3A) CE(sat) C B Complement to Type 2SD2060 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIO

isc Silicon PNP Power Transistor 2SB1371 DESCRIPTION Collector-Emitter Breakdown Voltage- V = -120V(Min) (BR)CEO Good Linearity of h FE Wide Area of Safe Operation Complement to Type 2SD2064 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for high power amplifications. ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMB

Inchange Semiconductor Product Specification Silicon PNP Power Transistors 2SB1393 2SB1393A DESCRIPTION With TO-220Fa package Satisfactory linearity of hFE Low collector to emitter saturation voltage Complement to type 2SD1985/1985A APPLICATIONS For power amplification PINNING PIN DESCRIPTION 1 Base 2 Collector Fig.1 simplified outline (TO-220Fa) and symbol 3

isc Silicon PNP Power Transistor 2SB1373 DESCRIPTION Collector-Emitter Breakdown Voltage- V = -160V(Min) (BR)CEO Wide Area of Safe Operation Complement to Type 2SD2066 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for high power amplifications. ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V

isc Silicon PNP Power Transistor 2SB1345 DESCRIPTION Low Collector Saturation Voltage- V = -2.0V(Min) @I = -5A CE(sat) C Good Linearity of h FE Complement to Type 2SD2062 With TO-3PN package Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Power driver and general purpose applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a

isc Silicon PNP Power Transistor 2SB1392 DESCRIPTION Collector-Emitter Breakdown Voltage- V = -60V(Min.) (BR)CEO Good Linearity of h FE Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for low frequency power amplifier applications. ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Collector-Base Vo

isc Silicon PNP Darlington Power Transistor 2SB1391 DESCRIPTION Collector-Emitter Sustaining Voltage- V = -120V(Min) CEO(SUS) High DC Current Gain- h = 1000(Min)@ (V = -3V, I = -4A) FE CE C Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for power switching applications. ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBO

isc Silicon PNP Power Transistor 2SB1315 DESCRIPTION Collector-Emitter Breakdown Voltage- V = -120V(Min) (BR)CEO Good Linearity of h FE Complement to Type 2SD1977 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Audio frequency power amplifier applications Recommend for 45-55W audio frequency amplifier output stage applic