2SB13 Specs and Replacement
Type Designator: 2SB13
Material of Transistor: Ge
Polarity: PNP
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 0.1 W
Maximum Collector-Base Voltage |Vcb|: 30 V
Maximum Emitter-Base Voltage |Veb|: 12 V
Maximum Collector Current |Ic max|: 0.05 A
Max. Operating Junction Temperature (Tj): 70 °C
Electrical Characteristics
Transition Frequency (ft): 0.35 MHz
Forward Current Transfer Ratio (hFE), MIN: 30
Package: TO1
2SB13 Substitution
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2SB13 datasheet
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Maintenance/ Discontinued Maintenance/Discontinued includes following four Product lifecycle stage. (planed maintenance type, maintenance type, planed discontinued typed, discontinued type) Maintenance/ Discontinued Maintenance/Discontinued includes following four Product lifecycle stage. (planed maintenance type, maintenance type, planed discontinued typed, discontinued type) Mainten... See More ⇒
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Appendix Notes No technical content pages of this document may be reproduced in any form or transmitted by any means without prior permission of ROHM CO.,LTD. The contents described herein are subject to change without notice. The specifications for the product described in this document are for reference only. Upon actual use, therefore, please request that specifications to be sep... See More ⇒
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To all our customers Regarding the change of names mentioned in the document, such as Hitachi Electric and Hitachi XX, to Renesas Technology Corp. The semiconductor operations of Mitsubishi Electric and Hitachi were transferred to Renesas Technology Corporation on April 1st 2003. These operations include microcomputer, logic, analog and discrete devices, and memory chips other than DRAM... See More ⇒
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ISAHAYA ELECTRONICS CORPORATION ISAHAYA ELECTRONICS CORPORATION http //www.idc-com.co.jp 6-41, TSUKUBA, ISAHAYA, NAGASAKI, 854-0065, JAPAN Keep safety in your circuit designs ! Isahaya Electronics Corporation puts the maximum effort into making semiconductor products better and more reliable, but there is always the possibility that trouble may occur with them. Trouble with ... See More ⇒
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2SB1375(PNP) TO-220 Transistor TO-220 1. BASE 2. COLLECTOR 3. EMITTER 3 2 1 Features High Power Dissipation PC=25W(TC=25 ) Low voltage VCE(sat)=-1.5V(Max)(IC=-2A,IB=-0.2A) Collector metal(Fin)is Coverd with Mold Regin Complementary to 2SD2012 MAXIMUM RATINGS (TA=25 unless otherwise noted ) Dimensions in inches and (millimeters) Symbol Parameter... See More ⇒
2SB1386 PNP EPITAXIAL PLANAR TRANSISTOR P b Lead(Pb)-Free 1. BASE 2. COLLECTOR 3. EMITTER 1 2 3 Features SOT-89 * Excellent DC Current Gain Characteristics * Low VCE(Sat) Mechanical Data * Case Molded Plastic ABSOLUTE MAXIMUM RATINGS(TA=25 C) Rating Symbol Value Unit VCBO -30 V Collector to Base Voltage VCEO -20 V Collector to Emitter Voltage V VEBO -6 Collector to ... See More ⇒
FM120-M WILLAS 2SB1386THRU SOT-89 Plastic-Encapsulate Transistors FM1200-M 1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200V SOD-123 PACKAGE Pb Free Product Package outline Features Batch process d TRANSISTOR (PNP) eesign, excellent power dissipation offers better reverse l akage current and thermal resistance. SOD-123H SOT-89 Low p FEATURES mirofile surf... See More ⇒
FM120-M WILLAS THRU 2SB1308 SOT-89 Plastic-Encapsulate Transistors FM1200-M 1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200V SOD-123 PACKAGE Pb Free Product Pa c kage outline Features TRANSISTOR (PNP) esign, excellent power dissipation offers Batch process d SOT-89 better reverse leakage current and thermal resistance. FEATURES SOD-123H Low p Powe... See More ⇒
ST 2SB1386U PNP Silicon Epitaxial Planar Transistor Low frequency transistor Absolute Maximum Ratings (Ta = 25 ) Parameter Symbol Value Unit Collector Base Voltage -VCBO 30 V Collector Emitter Voltage -VCEO 20 V Emitter Base Voltage -VEBO 6 V Collector Current - DC -IC 5 A Collector Current - Pulse 1) -ICP 10 0.5 PC W Collector Power Dissipation 2 2) Junction Tempera... See More ⇒
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SMD Type Transistors PNP Transistors 2SB1397 1.70 0.1 Features Low collector to emitter saturation voltage Large current capacity Complementary to 2SD2100 Collector 0.42 0.1 0.46 0.1 Base 1.Base 2.Collector RBE 3.Emitter Emitter Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector - Base Voltage VCBO -25 Collector - Emitter Volt... See More ⇒
SMD Type Transistors Low Frequency Transistor 2SB1386 Features Low VCE(sat). VCE(sat) = -0.35V (Typ.) (IC/IB = -4A / -0.1A) Excellent DC current gain Epitaxial planar type PNP silicon transistor Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector-base voltage VCBO -30 V Collector-emitter voltage VCEO -20 V Emitter-base voltage VEBO -6 V Collector current IC -5... See More ⇒
SMD Type Transistors Low Frequency Transistor 2SB1386 Features Low VCE(sat). VCE(sat) = -0.35V (Typ.) (IC/IB = -4A / -0.1A) Excellent DC current gain Epitaxial planar type PNP silicon transistor Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector-base voltage VCBO -30 V Collector-emitter voltage VCEO -20 V Emitter-base voltage VEBO -6 V Collector current IC -5... See More ⇒
SMD Type Transistors PNP Transistors 2SB1386 Features 1.70 0.1 Low VCE(sat). VCE(sat) = -0.35V (Typ.) (IC/IB = -4A / -0.1A) Excellent DC current gain Epitaxial planar type 0.42 0.1 0.46 0.1 PNP silicon transistor 1.Base 2.Collector 3.Emitter Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector-base voltage VCBO -30 V Collector-emitter voltage VCEO -20 V E... See More ⇒
SMD Type Transistors Power Transistor 2SB1308 Features Low saturation voltage, typically VCE(sat) = -0.45V (Max.) at IC/IB = -1.5A / -0.15A. Excellent DC current gain characteristics. Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector-base voltage VCBO -30 V Collector-emitter voltage VCEO -20 V Emitter-base voltage VEBO -6 V Collector current IC -3 A Collector ... See More ⇒
SMD Type Transistors Low Frequency Transistor 2SB1386 Features Low VCE(sat). VCE(sat) = -0.35V (Typ.) (IC/IB = -4A / -0.1A) Excellent DC current gain Epitaxial planar type PNP silicon transistor Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector-base voltage VCBO -30 V Collector-emitter voltage VCEO -20 V Emitter-base voltage VEBO -6 V Collector current IC -5... See More ⇒
SMD Type Transistors PNP Transistors 2SB1302 1.70 0.1 Features Low collector-to-emitter saturation voltage. Large current capacity. 0.42 0.1 Fast switching speed. 0.46 0.1 1.Base 2.Collector 3.Emitter Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector - Base Voltage VCBO -25 Collector - Emitter Voltage VCEO -20 V Emitter - Base V... See More ⇒
SMD Type Transistors PNP Transistors 2SB1308 1.70 0.1 Features Power Transistor Excellent DC current Gain Low Collector-emitter Saturation Voltage 0.42 0.1 0.46 0.1 1.Base 2.Collector 3.Emitter Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector - Base Voltage VCBO -30 Collector - Emitter Voltage VCEO -20 V Emitter - Base Voltage... See More ⇒
SMD Type Transistors PNP Transistors 2SB1394 1.70 0.1 Features Contains diode between collector and emitter. Low saturation voltage. 0.42 0.1 0.46 0.1 Large current capacity. Complementary to 2SD2099 1.Base 2.Collector 3.Emitter Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector - Base Voltage VCBO -40 Collector - Emitter Vo... See More ⇒
SMD Type Transistors PNP Transistors 2SB1324 1.70 0.1 Features Contains diode between collector and emitter. Low saturation voltage. Collector Large current capacity. 0.42 0.1 0.46 0.1 Complementary to 2SD1998 Base 1.Base 2.Collector RBE 3.Emitter Emitter Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector - Base Voltage V... See More ⇒
SMD Type Transistors Power Transistor 2SB1308 Features Low saturation voltage, typically VCE(sat) = -0.45V (Max.) at IC/IB = -1.5A / -0.15A. Excellent DC current gain characteristics. Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector-base voltage VCBO -30 V Collector-emitter voltage VCEO -20 V Emitter-base voltage VEBO -6 V Collector current IC -3 A Collector ... See More ⇒
CHENMKO ENTERPRISE CO.,LTD 2SB1386PGP SMALL FLAT PNP Epitaxial Transistor VOLTAGE 20 Volts CURRENT 5 Amperes APPLICATION * Power driver and Strobe Flash . FEATURE * Small flat package. (DPAK) DPAK * Low saturation voltage VCE(sat)=-0.35V(Typ.)(IC/IB=-4A/-0.1A) * High saturation current capability. .094 (2.38) .086 (2.19) .022 (0.55) .018 (0.45) MARKING * hFE Classification P... See More ⇒
CHENMKO ENTERPRISE CO.,LTD 2SB1386GP SMALL FLAT PNP Epitaxial Transistor VOLTAGE 20 Volts CURRENT 5 Amperes APPLICATION * Power driver and Strobe Flash . FEATURE * Small flat package. (SC-62/SOT-89) SC-62/SOT-89 * Low saturation voltage VCE(sat)=-0.35V(Typ.)(IC/IB=-4A/-0.1A) * PC= 2.0W (mounted on ceramic substrate). * High saturation current capability. 4.6MAX. 1.6MAX. 1.7MAX.... See More ⇒
isc Silicon PNP Power Transistor 2SB1367 DESCRIPTION Collector-Emitter Breakdown Voltage- V = -100V(Min) (BR)CEO Collector Power Dissipation- P = 30W@ T = 25 C C Low Collector Saturation Voltage- V = -2.0V(Max)@ (I = -4A, I = -0.4A) CE(sat) C B Complement to Type 2SD2059 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATI... See More ⇒
isc Silicon PNP Darlington Power Transistor 2SB1389 DESCRIPTION Collector-Emitter Breakdown Voltage- V = -60V(Min) (BR)CEO High DC Current Gain- h = 1000(Min)@ (V = -3V, I = -2A) FE CE C Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for low frequency power amplifier applications. ABSOLUTE MAXIMUM RATINGS(T =25 ... See More ⇒
isc Silicon PNP Power Transistor 2SB1372 DESCRIPTION Collector-Emitter Breakdown Voltage- V = -140V(Min) (BR)CEO Good Linearity of h FE Wide Area of Safe Operation Complement to Type 2SD2065 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for high power amplifications. ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMB... See More ⇒
isc Silicon PNP Power Transistor 2SB1370 DESCRIPTION Low Collector Saturation Voltage- V = -0.3V(Typ.)@I = -2A CE(sat) C Good Linearity of h FE Wide Area of Safe Operation Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for power switching applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE U... See More ⇒
isc Silicon PNP Power Transistor 2SB1346 DESCRIPTION Collector-Emitter Breakdown Voltage- V = -60V(Min) (BR)CEO Good Linearity of h FE Wide Area of Safe Operation Complement to Type 2SD2027 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for low frequency and general purpose amplifier applications. ABSOLUTE MAX... See More ⇒
isc Silicon PNP Power Transistor 2SB1347 DESCRIPTION Collector-Emitter Breakdown Voltage- V = -160V(Min) (BR)CEO Wide Area of Safe Operation Complement to Type 2SD2029 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Power amplifier applications Optimum for the output stage of a HiFi audio amplifier ABSOLUTE MAXIMUM RATING... See More ⇒
isc Silicon PNP Power Transistor 2SB1316 DESCRIPTION Darlington connection for high DC current gain Built in resistor between base and emitter Built in damper diode Complementary NPN types 2SD1980 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Motor drivers,LED driver,Power supply ABSOLUTE MAXIMUM RA... See More ⇒
isc Silicon PNP Darlington Power Transistor 2SB1342 DESCRIPTION Collector-Emitter Breakdown Voltage- V = -80V(Min) (BR)CEO High DC Current Gain- h = 1000(Min)@ (V = -3V, I = -2A) FE CE C Complement to Type 2SD1933 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for power amplifier applications. ABSOLUTE MAXIMUM ... See More ⇒
SavantIC Semiconductor Product Specification Silicon PNP Power Transistors 2SB1334A DESCRIPTION With TO-220 package Wide area of safe operation Low collector saturation voltage APPLICATIONS Designed for use in low frequency power amplifier applications PINNING PIN DESCRIPTION 1 Emitter Collector;connected to 2 mounting base Fig.1 simplified outline (TO-220) ... See More ⇒
isc Silicon PNP Power Transistor 2SB1353 DESCRIPTION Good Linearity of h FE Collector-Emitter Breakdown Voltage- V = -120V(Min) (BR)CEO Complement to Type 2SD2033 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for use in high voltage driver applications. ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VAL... See More ⇒
isc Silicon PNP Power Transistor 2SB1361 DESCRIPTION Collector-Emitter Breakdown Voltage- V = -150V(Min) (BR)CEO Wide Area of Safe Operation Complement to Type 2SD2052 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for high power amplifications. ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V ... See More ⇒
isc Silicon PNP Darlington Power Transistor 2SB1344 DESCRIPTION Collector-Emitter Breakdown Voltage- V = -100V(Min) (BR)CEO High DC Current Gain- h = 1000(Min)@ (V = -3V, I = -2A) FE CE C Complement to Type 2SD2025 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for power amplifier applications. ABSOLUTE MAXIMUM... See More ⇒
isc Silicon PNP Darlington Power Transistor 2SB1383 DESCRIPTION High DC Current Gain h = 2000(Min.)@ I = -12A, V = -4V FE C CE High Collector-Emitter Breakdown Voltage- V = -120V(Min) (BR)CEO Complement to Type 2SD2083 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for driver of solenoid, motor and general purp... See More ⇒
isc Silicon PNP Power Transistor 2SB1335 DESCRIPTION High Collector Current I = -4A C Low Collector Saturation Voltage V = -1.5V(Max)@I = -3A CE(sat) C Wide Area of Safe Operation Complement to Type 2SD1855 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for low frequency power amplifier applications. ABSOLUTE... See More ⇒
isc Silicon PNP Power Transistor 2SB1369 DESCRIPTION Collector-Emitter Breakdown Voltage- V = -180V(Min) (BR)CEO Low Collector Saturation Voltage- V = -1.0V(Max)@ (I = -0.5A, I = -50mA) CE(sat) C B Complement to Type 2SD2061 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS High voltage applications. TV, monitor vertical... See More ⇒
isc Silicon PNP Power Transistor 2SB1317 DESCRIPTION Good Linearity of h FE Wide Area of Safe Operation High DC Current-Gain Bandwidth Product Complement to Type 2SD1975 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS High power amplification Optimum for the output stage of a Hi-Fi audio amplifier. ABSOLUTE MAXIMUM RATING... See More ⇒
isc Silicon PNP Darlington Power Transistor 2SB1341 DESCRIPTION Collector-Emitter Breakdown Voltage- V = -80V(Min) (BR)CEO High DC Current Gain- h = 1000(Min)@ (V = -3V, I = -2A) FE CE C Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for power amplifier applications. ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL P... See More ⇒
isc Silicon PNP Darlington Power Transistor 2SB1382 DESCRIPTION Collector-Emitter Breakdown Voltage- V = -120V(Min) (BR)CEO High DC Current Gain- h = 2000( Min.) @(I = -8A, V = -4V) FE C CE Low Collector Saturation Voltage- V = -1.5V(Max)@ (I = -8A, I = -16mA) CE(sat) C B Complement to Type 2SD2082 Minimum Lot-to-Lot variations for robust device performance and reli... See More ⇒
isc Silicon PNP Power Transistor 2SB1362 DESCRIPTION Collector-Emitter Breakdown Voltage- V = -150V(Min) (BR)CEO Wide Area of Safe Operation Complement to Type 2SD2053 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for high power amplifications. ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V ... See More ⇒
isc Silicon PNP Power Transistor 2SB1366 DESCRIPTION Collector-Emitter Breakdown Voltage- V = -60V(Min) (BR)CEO Collector Power Dissipation- P = 25 W@ T = 25 C C Low Collector Saturation Voltage- V = -1.0V(Max)@ (I = -2A, I = -0.2A) CE(sat) C B Complement to Type 2SD2058 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATI... See More ⇒
isc Silicon PNP Darlington Power Transistor 2SB1343 DESCRIPTION Collector-Emitter Breakdown Voltage- V = -100V(Min) (BR)CEO High DC Current Gain- h = 1000(Min)@ (V = -3V, I = -2A) FE CE C Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for power amplifier applications. ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL ... See More ⇒
isc Silicon PNP Power Transistor 2SB1393 DESCRIPTION Collector-Emitter Breakdown Voltage- V = -60V(Min.) (BR)CEO Good Linearity of h FE Low Collector Saturation Voltage- V = -1.2V(Max,)@ I = -3A CE(sat) C Complement to Type 2SD1985 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for high power amplifications.... See More ⇒
isc Silicon PNP Darlington Power Transistor 2SB1381 DESCRIPTION Collector-Emitter Breakdown Voltage- V = -100V(Min) (BR)CEO High DC Current Gain- h = 1500(Min)@ (V = -3V, I = -2.5A) FE CE C Low Collector Saturation Voltage- V = -1.5V(Max)@ (I = -2.5A, I = -5mA) CE(sat) C B Complement to Type 2SD2079 Minimum Lot-to-Lot variations for robust device performance and rel... See More ⇒
isc Silicon PNP Darlington Power Transistor 2SB1340 DESCRIPTION Collector-Emitter Breakdown Voltage- V = -120V(Min) (BR)CEO High DC Current Gain- h = 2000(Min)@ (V = -3V, I = -2A) FE CE C Complement to Type 2SD1889 APPLICATIONS Designed for power amplifier applications. ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Collector-Base Voltage -120 V CB... See More ⇒
isc Silicon PNP Power Transistor 2SB1375 DESCRIPTION Collector-Emitter Breakdown Voltage- V = -60V(Min) (BR)CEO Collector Power Dissipation- P = 25 W@ T = 25 C C Low Collector Saturation Voltage- V = -1.5V(Max)@ (I = -2A, I = -0.2A) CE(sat) C B Complement to Type 2SD2012 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATI... See More ⇒
isc Silicon PNP Power Transistor 2SB1334 DESCRIPTION High Collector Current I = -4A C Low Collector Saturation Voltage V = -1.5V(Max)@I = -3A CE(sat) C Wide Area of Safe Operation Complement to Type 2SD1778 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for low frequency power amplifier applications. ABSOLUTE... See More ⇒
isc Silicon PNP Power Transistor 2SB1368 DESCRIPTION Collector-Emitter Breakdown Voltage- V = -80V(Min) (BR)CEO Collector Power Dissipation- P = 25W@ T = 25 C C Low Collector Saturation Voltage- V = -1.7V(Max)@ (I = -3A, I = -0.3A) CE(sat) C B Complement to Type 2SD2060 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIO... See More ⇒
isc Silicon PNP Power Transistor 2SB1371 DESCRIPTION Collector-Emitter Breakdown Voltage- V = -120V(Min) (BR)CEO Good Linearity of h FE Wide Area of Safe Operation Complement to Type 2SD2064 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for high power amplifications. ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMB... See More ⇒
Inchange Semiconductor Product Specification Silicon PNP Power Transistors 2SB1393 2SB1393A DESCRIPTION With TO-220Fa package Satisfactory linearity of hFE Low collector to emitter saturation voltage Complement to type 2SD1985/1985A APPLICATIONS For power amplification PINNING PIN DESCRIPTION 1 Base 2 Collector Fig.1 simplified outline (TO-220Fa) and symbol 3 ... See More ⇒
isc Silicon PNP Power Transistor 2SB1373 DESCRIPTION Collector-Emitter Breakdown Voltage- V = -160V(Min) (BR)CEO Wide Area of Safe Operation Complement to Type 2SD2066 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for high power amplifications. ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V ... See More ⇒
isc Silicon PNP Power Transistor 2SB1345 DESCRIPTION Low Collector Saturation Voltage- V = -2.0V(Min) @I = -5A CE(sat) C Good Linearity of h FE Complement to Type 2SD2062 With TO-3PN package Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Power driver and general purpose applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a... See More ⇒
isc Silicon PNP Power Transistor 2SB1392 DESCRIPTION Collector-Emitter Breakdown Voltage- V = -60V(Min.) (BR)CEO Good Linearity of h FE Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for low frequency power amplifier applications. ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Collector-Base Vo... See More ⇒
isc Silicon PNP Darlington Power Transistor 2SB1391 DESCRIPTION Collector-Emitter Sustaining Voltage- V = -120V(Min) CEO(SUS) High DC Current Gain- h = 1000(Min)@ (V = -3V, I = -4A) FE CE C Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for power switching applications. ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBO... See More ⇒
isc Silicon PNP Power Transistor 2SB1315 DESCRIPTION Collector-Emitter Breakdown Voltage- V = -120V(Min) (BR)CEO Good Linearity of h FE Complement to Type 2SD1977 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Audio frequency power amplifier applications Recommend for 45-55W audio frequency amplifier output stage applic... See More ⇒
Detailed specifications: 2SB1296, 2SB1296S, 2SB1296T, 2SB1296U, 2SB1297, 2SB1298, 2SB1299, 2SB129A, 2N3904, 2SB130, 2SB1300, 2SB1301, 2SB1302, 2SB1302R, 2SB1302S, 2SB1302T, 2SB1303
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