2SB142 Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: 2SB142 📄📄
Material: Ge
Polaridad de transistor: PNP
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pc): 10 W
Tensión colector-base (Vcb): 30 V
Tensión colector-emisor (Vce): 30 V
Tensión emisor-base (Veb): 12 V
Corriente del colector DC máxima (Ic): 1 A
Temperatura operativa máxima (Tj): 85 °C
CARACTERÍSTICAS ELÉCTRICAS
Transición de frecuencia (fT): 0.1 MHz
Ganancia de corriente contínua (hFE): 12
Encapsulados: TO3
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2SB142 datasheet
0.1. Size:62K rohm
2sb1427.pdf 
2SB1427 Transistors Power transistor (-20V, -2A) 2SB1427 External dimensions (Unit mm) Features 1) Low saturation voltage, 4.0 VCE Max . -0.5V at IC/IB = -1A / -50mA. 1.0 2.5 0.5 2) Excellent DC current gain characteristics. (1) (2) (3) (1) Base (2) Collector (3) Emitter ROHM MPT3 EIAJ SC-62 Absolute maximum ratings (Ta=25 C) Parameter Symbol Limits Un
0.2. Size:64K rohm
2sb1424 2sa1585s.pdf
2SB1424 / 2SA1585S Transistors Low VCE(sat) Transistor (-20V, -3A) 2SB1424 / 2SA1585S External dimensions (Unit mm) Features 1) Low VCE(sat). 2SB1424 2SA1585S VCE(sat) = -0.2V (Typ.) 4 0.2 2 0.2 4.5+0.2 (IC/IB = -2A / -0.1A) -0.1 1.5 0.1 1.6 0.1 2) Excellent DC current gain characteristics. 3) Complements the 2SD2150 / 2SC4115S. 0.45+0.15 (1) (2) (3) -0.05
0.3. Size:101K rohm
2sa1585s 2sb1424 2sb1424.pdf
Transistors Low VCE(sat) Transistor (*20V, *3A) 2SB1424 / 2SA1585S FFeatures FExternal dimensions (Units mm) 1) Low VCE(sat). VCE(sat) = *0.2V (Typ.) (IC/IB = *2A / *0.1A) 2) Excellent DC current gain charac- teristics. 3) Complements the 2SD2150 / 2SC4115S. FStructure Epitaxial planar type PNP silicon transistor FAbsolute maximum ratings (Ta = 25_C) (96-596-A74) 201 Transist
0.5. Size:178K secos
2sb1424.pdf
2SB1424 PNP Silicon Elektronische Bauelemente Medium Power Transistor RoHS Compliant Product D A suffix of "-C" specifies halogen & lead-free D1 A b1 1.BASE SOT-89 2.COLLECTOR b C e 3. EMITTER e1 FEATURES Dimensions In Millimeters Dimensions In Inches Symbol Min Max Min Max A 1.400 1.600 0.055 0.063 Power dissipation b 0.320 0.520 0.013 0.020 b1 0.36
0.6. Size:627K jiangsu
2sb1424.pdf
JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-89-3L Plastic-Encapsulate Transistors SOT-89-3L 2SB1424 TRANSISTOR (PNP) 1. BASE FEATURES 2. COLLECTOR Excellent DC current gain Low collector-emitter saturation voltage 3. EMITTER Complement the 2SD2150 MAXIMUM RATINGS (Ta=25 unless otherwise noted) Symbol Parameter Value Unit VCBO Collector-Base V
0.7. Size:199K jmnic
2sb1429.pdf
JMnic Product Specification Silicon PNP Power Transistors 2SB1429 DESCRIPTION With TO-3PL package Complement to type 2SD2155 APPLICATIONS Power amplifier applications Recommend for 100W high fidelity audio frequency amplifier output stage PINNING PIN DESCRIPTION 1 Emitter Collector;connected to 2 mounting base Fig.1 simplified outline (TO-3PL) and symbol 3
0.9. Size:254K htsemi
2sb1424.pdf
2SB1 424 TRANSISTOR(PNP) SOT-89-3L 1. BASE FEATURES 2. COLLECTOR Excellent DC Current Gain Low Collector-emitter saturation voltage 3. EMITTER Complement the 2SD2150 MAXIMUM RATINGS (Ta=25 unless otherwise noted) Symbol Parameter Value Unit VCBO Collector-Base Voltage -20 V V Collector-Emitter Voltage -20 V CEO VEBO Emitter-Base Voltage -6 V I Collecto
0.10. Size:255K wietron
2sb1424.pdf
2SB1424 Epitaxial Planar PNP Transistors SOT-89 P b Lead(Pb)-Free 1 2 1. BASE 3 2. COLLECTOR 3. EMITTER % C ABSOLUTE MAXIMUM RATINGS (Ta=25 ) Rating Symbol Limits Unit Vdc Collector-Base Voltage V -20 CBO Vdc Collector-Emitter Voltage -20 VCEO Vdc Emitter-Base Voltage -6 VEBO I A(DC) -3 C Collector Current ICP -5 A (Pulse)* PD 0.6 W Collector Power Dissipation %
0.13. Size:830K kexin
2sb1427.pdf
SMD Type Transistors PNP Transistors 2SB1427 1.70 0.1 Features Low saturation voltage, Excellent DC current gain characteristics. 0.42 0.1 0.46 0.1 1.Base 2.Collector 3.Emitter Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector - Base Voltage VCBO -20 Collector - Emitter Voltage VCEO -20 V Emitter - Base Voltage VEBO -6 Collector Cu
0.14. Size:1168K kexin
2sb1424.pdf
SMD Type Transistors PNP Transistors 2SB1424 1.70 0.1 Features Excellent DC current gain Low collector-emitter saturation voltage Complementary to 2SD2150 0.42 0.1 0.46 0.1 1.Base 2.Collector 3.Emitter Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector - Base Voltage VCBO -20 Collector - Emitter Voltage VCEO -20 V Emitter - Base
0.15. Size:201K inchange semiconductor
2sb1421.pdf
isc Silicon PNP Power Transistor 2SB1421 DESCRIPTION Collector-Emitter Breakdown Voltage- V = -140V(Min) (BR)CEO Wide Area of Safe Operation Complement to Type 2SD2140 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for high power amplifications. Optimum for the output stage of a HiFi audio amplifier ABSOLUTE MAX
0.16. Size:216K inchange semiconductor
2sb1420.pdf
isc Silicon PNP Darlington Power Transistor 2SB1420 DESCRIPTION Collector-Emitter Breakdown Voltage- V = -120V(Min) (BR)CEO High DC Current Gain- h = 2000(Min)@I = -8A FE C Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Driver for chopper regulator, DC motor driver and general purpose applications. ABSOLUTE MAXIMUM RATING
0.17. Size:203K inchange semiconductor
2sb1429.pdf
isc Silicon PNP Power Transistor 2SB1429 DESCRIPTION High Current Capability High Power Dissipation Collector-Emitter Breakdown Voltage- V = -180V(Min) (BR)CEO Complement to Type 2SD2155 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Power amplifier applications Recommend for 100W high fidelity audio frequency amplifie
Otros transistores... 2SB141, 2SB1411, 2SB1413, 2SB1415, 2SB1416, 2SB1417, 2SB1418, 2SB1419, BD135, 2SB1421, 2SB1422, 2SB1429, 2SB143, 2SB1430, 2SB1431, 2SB1432, 2SB1434
