2SB1427 Transistors Power transistor (-20V, -2A) 2SB1427 External dimensions (Unit : mm) Features 1) Low saturation voltage, 4.0VCE : Max . -0.5V at IC/IB = -1A / -50mA. 1.0 2.5 0.52) Excellent DC current gain characteristics. (1)(2)(3)(1) Base(2) Collector(3) Emitter ROHM : MPT3EIAJ : SC-62 Absolute maximum ratings (Ta=25C) Parameter Symbol Limits Un

2SB1424 / 2SA1585S Transistors Low VCE(sat) Transistor (-20V, -3A) 2SB1424 / 2SA1585S External dimensions (Unit : mm) Features 1) Low VCE(sat). 2SB1424 2SA1585SVCE(sat) = -0.2V (Typ.) 40.2 20.24.5+0.2(IC/IB = -2A / -0.1A) -0.11.50.11.60.12) Excellent DC current gain characteristics. 3) Complements the 2SD2150 / 2SC4115S. 0.45+0.15(1) (2) (3)-0.05

TransistorsLow VCE(sat) Transistor (*20V, *3A)2SB1424 / 2SA1585SFFeatures FExternal dimensions (Units: mm)1) Low VCE(sat).VCE(sat) = *0.2V (Typ.)(IC/IB = *2A / *0.1A)2) Excellent DC current gain charac-teristics.3) Complements the 2SD2150 /2SC4115S.FStructureEpitaxial planar typePNP silicon transistorFAbsolute maximum ratings (Ta = 25_C)(96-596-A74)201Transist

2SB1424PNP Silicon Elektronische BauelementeMedium Power TransistorRoHS Compliant ProductDA suffix of "-C" specifies halogen & lead-freeD1A b1 1.BASE SOT-892.COLLECTORb Ce3. EMITTERe1FEATURESDimensions In Millimeters Dimensions In InchesSymbolMin Max Min MaxA 1.400 1.600 0.055 0.063 Power dissipationb 0.320 0.520 0.013 0.020b1 0.36

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-89-3L Plastic-Encapsulate Transistors SOT-89-3L 2SB1424 TRANSISTOR (PNP) 1. BASE FEATURES 2. COLLECTOR Excellent DC current gain Low collector-emitter saturation voltage 3. EMITTER Complement the 2SD2150 MAXIMUM RATINGS (Ta=25 unless otherwise noted) Symbol Parameter Value Unit VCBO Collector-Base V

JMnic Product Specification Silicon PNP Power Transistors 2SB1429 DESCRIPTION With TO-3PL package Complement to type 2SD2155 APPLICATIONS Power amplifier applications Recommend for 100W high fidelity audio frequency amplifier output stage PINNING PIN DESCRIPTION1 Emitter Collector;connected to 2 mounting base Fig.1 simplified outline (TO-3PL) and symbol 3

E(2k) (80)BDarlington 2SB1420Equivalent circuitCSilicon PNP Epitaxial Planar TransistorApplication : Chopper Regulator, DC Motor Driver and General PurposeExternal Dimensions MT-100(TO3P) Absolute maximum ratings (Ta=25C) Electrical Characteristics (Ta=25C)Symbol Ratings Unit Symbol Conditions Ratings Unit0.24.80.415.6VCBO 120 V ICBO VCB=120V

2SB1 424TRANSISTOR(PNP) SOT-89-3L 1. BASE FEATURES 2. COLLECTOR Excellent DC Current Gain Low Collector-emitter saturation voltage 3. EMITTER Complement the 2SD2150 MAXIMUM RATINGS (Ta=25 unless otherwise noted) Symbol Parameter Value Unit VCBO Collector-Base Voltage -20 V V Collector-Emitter Voltage -20 V CEOVEBO Emitter-Base Voltage -6 V I Collecto

2SB1424Epitaxial Planar PNP TransistorsSOT-89P b Lead(Pb)-Free121. BASE32. COLLECTOR3. EMITTER%CABSOLUTE MAXIMUM RATINGS (Ta=25 )Rating SymbolLimits UnitVdcCollector-Base VoltageV -20CBOVdcCollector-Emitter Voltage -20VCEOVdcEmitter-Base Voltage -6VEBOI A(DC)-3CCollector CurrentICP -5 A (Pulse)*PD 0.6 WCollector Power Dissipation%

2SB1426(BR3CG1426) Rev.C Feb.-2015 DATA SHEET / Descriptions TO-92 PNP Silicon PNP transistor in a TO-92 Plastic Package. / Features Low saturation voltage. / Applications / Equivalent Circuit / Pinning 1 2 3 PIN1Base PIN 2Collector PIN 3Emitter

2SB1424 Rev.E Mar.-2016 DATA SHEET / Descriptions SOT-89 PNP Silicon PNP transistor in a SOT-89 Plastic Package. / Features Low VCE(sat),excellent DC current gain characteristics. / Applications General purpose amplifier.

SMD Type TransistorsPNP Transistors2SB14271.70 0.1 Features Low saturation voltage, Excellent DC current gain characteristics.0.42 0.10.46 0.11.Base2.Collector3.Emitter Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Collector - Base Voltage VCBO -20 Collector - Emitter Voltage VCEO -20 V Emitter - Base Voltage VEBO -6 Collector Cu

SMD Type TransistorsPNP Transistors2SB14241.70 0.1 Features Excellent DC current gain Low collector-emitter saturation voltage Complementary to 2SD21500.42 0.10.46 0.11.Base2.Collector3.Emitter Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Collector - Base Voltage VCBO -20 Collector - Emitter Voltage VCEO -20 V Emitter - Base

isc Silicon PNP Power Transistor 2SB1421DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = -140V(Min)(BR)CEOWide Area of Safe OperationComplement to Type 2SD2140Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for high power amplifications.Optimum for the output stage of a HiFi audio amplifierABSOLUTE MAX

isc Silicon PNP Darlington Power Transistor 2SB1420DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = -120V(Min)(BR)CEOHigh DC Current Gain-: h = 2000(Min)@I = -8AFE CMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDriver for chopper regulator, DC motor driver and generalpurpose applications.ABSOLUTE MAXIMUM RATING

isc Silicon PNP Power Transistor 2SB1429DESCRIPTIONHigh Current CapabilityHigh Power DissipationCollector-Emitter Breakdown Voltage-: V = -180V(Min)(BR)CEOComplement to Type 2SD2155Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSPower amplifier applicationsRecommend for 100W high fidelity audio frequency amplifie