2SB167
. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: 2SB167
Material: Ge
Polaridad de transistor: PNP
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pc): 0.2
W
Tensión colector-base (Vcb): 20
V
Tensión colector-emisor (Vce): 20
V
Tensión emisor-base (Veb): 2
V
Corriente del colector DC máxima (Ic): 0.5
A
Temperatura operativa máxima (Tj): 85
°C
CARACTERÍSTICAS ELÉCTRICAS
Transición de frecuencia (ft): 0.5
MHz
Ganancia de corriente contínua (hfe): 80
Paquete / Cubierta:
TO1
Búsqueda de reemplazo de transistor bipolar 2SB167
2SB167
Datasheet (PDF)
0.1. Size:53K rohm
2sb1676.pdf 
2SB1676TransistorsMedium Power Transistor(Motor, Relay drive) (-80V, -4A)2SB1676 External dimensions (Units : mm) Features1) Darlington connection for a high hFE.2) Built-in resistor between base and emitter.10.0 4.53) Built-in damper diode.3.2 2.8 4) Complements the 2SD2618.1.21.30.8 Absolute maximum ratings (Ta = 25C)0.752.54 2.54 2.6 (1) Base(Gate)
0.2. Size:52K rohm
2sb1674.pdf
2SB1674TransistorsPower Transistor (-120V, -6A)2SB1674 External dimensions (Units : mm) Features1) Darlington connection for high DC current gain.2) Built-in resistor between base and emitter.10.0 4.53) Built-in damper diode.3.2 2.8 4) Complements the 2SD2615.1.21.30.8 Absolute maximum ratings (Ta=25C)0.75 ( )2.54 2.54 2.6 (1) Base Gate(1) (2) (3)( )
0.3. Size:52K rohm
2sb1672.pdf
2SB1672TransistorsPower Transistor (-80V, -7A)2SB1672 External dimensions (Units : mm) Features1) Low saturation voltage.(Typ. VCE(sat) = -0.3V at IC / IB =-4A / -0.4A)10.0 4.53.2 2.8 2) Excellent DC current gain characteristics.3) Pc = 30W (Tc = 25C).4) Wide SOA (safe operating area).1.21.35) Complements the 2SD2611.0.80.752.54 2.54 2.6(1) (2) (3)(
0.4. Size:52K rohm
2sb1675.pdf
2SB1675TransistorsPower Transistor (-80V, -10A)2SB1675 Features External dimensions (Units : mm)1) Darlington connection for high DC current gain.2) Built-in resistor between base and emitter.10.0 4.53) Built-in damper diode.3.2 2.8 1.21.3 Absolute maximum retings (Ta=25C)0.8Parameter Symbol Limits Unit0.752.54 2.54 2.6Collector-base voltage VCBO -80 V(
0.5. Size:44K panasonic
2sb1679.pdf
Transistors2SB1679Silicon PNP epitaxial planer typeUnit: mmFor low-frequency amplification0.3+0.1 0.15+0.100.050.03 Features Large current capacitance Low collector to emitter saturation voltage1 2 Small type package, allowing downsizing and thinning of the(0.65) (0.65)equipment.1.30.12.00.210 Absolute Maximum Ratings Ta = 25CParame
0.6. Size:119K panasonic
2sb1678.pdf
Transistors2SB1678Silicon PNP epitaxial planer typeUnit: mmFor low-frequency amplification4.50.11.60.2 1.50.1 Features Low collector to emitter saturation voltage VCE(sat) Large Peak collector current ICP3 21 Mini power type package, allowing downsizing and thinning of the0.40.08 0.50.08 0.40.04equipment and automatic insertion through the tape pac
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