2SB167 Datasheet. Specs and Replacement

Type Designator: 2SB167  📄📄 

Material of Transistor: Ge

Polarity: PNP

Absolute Maximum Ratings

Maximum Collector Power Dissipation (Pc): 0.2 W

Maximum Collector-Base Voltage |Vcb|: 20 V

Maximum Collector-Emitter Voltage |Vce|: 20 V

Maximum Emitter-Base Voltage |Veb|: 2 V

Maximum Collector Current |Ic max|: 0.5 A

Max. Operating Junction Temperature (Tj): 85 °C

Electrical Characteristics

Transition Frequency (ft): 0.5 MHz

Forward Current Transfer Ratio (hFE), MIN: 80

Noise Figure, dB: -

Package: TO1

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2SB167 datasheet

 0.1. Size:53K  rohm

 2sb1676.pdf pdf_icon

2SB167

2SB1676 Transistors Medium Power Transistor (Motor, Relay drive) (-80V, -4A) 2SB1676 External dimensions (Units mm) Features 1) Darlington connection for a high hFE. 2) Built-in resistor between base and emitter. 10.0 4.5 3) Built-in damper diode. 3.2 2.8 4) Complements the 2SD2618. 1.2 1.3 0.8 Absolute maximum ratings (Ta = 25 C) 0.75 2.54 2.54 2.6 (1) Base(Gate) ... See More ⇒

 0.2. Size:52K  rohm

 2sb1674.pdf pdf_icon

2SB167

2SB1674 Transistors Power Transistor (-120V, -6A) 2SB1674 External dimensions (Units mm) Features 1) Darlington connection for high DC current gain. 2) Built-in resistor between base and emitter. 10.0 4.5 3) Built-in damper diode. 3.2 2.8 4) Complements the 2SD2615. 1.2 1.3 0.8 Absolute maximum ratings (Ta=25 C) 0.75 ( ) 2.54 2.54 2.6 (1) Base Gate (1) (2) (3) ( ) ... See More ⇒

 0.3. Size:52K  rohm

 2sb1672.pdf pdf_icon

2SB167

2SB1672 Transistors Power Transistor (-80V, -7A) 2SB1672 External dimensions (Units mm) Features 1) Low saturation voltage. (Typ. VCE(sat) = -0.3V at IC / IB =-4A / -0.4A) 10.0 4.5 3.2 2.8 2) Excellent DC current gain characteristics. 3) Pc = 30W (Tc = 25 C). 4) Wide SOA (safe operating area). 1.2 1.3 5) Complements the 2SD2611. 0.8 0.75 2.54 2.54 2.6 (1) (2) (3) (... See More ⇒

 0.4. Size:52K  rohm

 2sb1675.pdf pdf_icon

2SB167

2SB1675 Transistors Power Transistor (-80V, -10A) 2SB1675 Features External dimensions (Units mm) 1) Darlington connection for high DC current gain. 2) Built-in resistor between base and emitter. 10.0 4.5 3) Built-in damper diode. 3.2 2.8 1.2 1.3 Absolute maximum retings (Ta=25 C) 0.8 Parameter Symbol Limits Unit 0.75 2.54 2.54 2.6 Collector-base voltage VCBO -80 V (... See More ⇒

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Detailed specifications: 2SB163, 2SB164, 2SB1647, 2SB1648, 2SB1649, 2SB165, 2SB1659, 2SB166, A733, 2SB168, 2SB169, 2SB16A, 2SB17, 2SB170, 2SB171, 2SB172, 2SB172A

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