2SB167 Datasheet, Equivalent, Cross Reference Search
Type Designator: 2SB167
Material of Transistor: Ge
Polarity: PNP
Maximum Collector Power Dissipation (Pc): 0.2 W
Maximum Collector-Base Voltage |Vcb|: 20 V
Maximum Collector-Emitter Voltage |Vce|: 20 V
Maximum Emitter-Base Voltage |Veb|: 2 V
Maximum Collector Current |Ic max|: 0.5 A
Max. Operating Junction Temperature (Tj): 85 °C
Transition Frequency (ft): 0.5 MHz
Forward Current Transfer Ratio (hFE), MIN: 80
Noise Figure, dB: -
Package: TO1
2SB167 Transistor Equivalent Substitute - Cross-Reference Search
2SB167 Datasheet (PDF)
2sb1676.pdf
2SB1676TransistorsMedium Power Transistor(Motor, Relay drive) (-80V, -4A)2SB1676 External dimensions (Units : mm) Features1) Darlington connection for a high hFE.2) Built-in resistor between base and emitter.10.0 4.53) Built-in damper diode.3.2 2.8 4) Complements the 2SD2618.1.21.30.8 Absolute maximum ratings (Ta = 25C)0.752.54 2.54 2.6 (1) Base(Gate)
2sb1674.pdf
2SB1674TransistorsPower Transistor (-120V, -6A)2SB1674 External dimensions (Units : mm) Features1) Darlington connection for high DC current gain.2) Built-in resistor between base and emitter.10.0 4.53) Built-in damper diode.3.2 2.8 4) Complements the 2SD2615.1.21.30.8 Absolute maximum ratings (Ta=25C)0.75 ( )2.54 2.54 2.6 (1) Base Gate(1) (2) (3)( )
2sb1672.pdf
2SB1672TransistorsPower Transistor (-80V, -7A)2SB1672 External dimensions (Units : mm) Features1) Low saturation voltage.(Typ. VCE(sat) = -0.3V at IC / IB =-4A / -0.4A)10.0 4.53.2 2.8 2) Excellent DC current gain characteristics.3) Pc = 30W (Tc = 25C).4) Wide SOA (safe operating area).1.21.35) Complements the 2SD2611.0.80.752.54 2.54 2.6(1) (2) (3)(
2sb1675.pdf
2SB1675TransistorsPower Transistor (-80V, -10A)2SB1675 Features External dimensions (Units : mm)1) Darlington connection for high DC current gain.2) Built-in resistor between base and emitter.10.0 4.53) Built-in damper diode.3.2 2.8 1.21.3 Absolute maximum retings (Ta=25C)0.8Parameter Symbol Limits Unit0.752.54 2.54 2.6Collector-base voltage VCBO -80 V(
2sb1679.pdf
Transistors2SB1679Silicon PNP epitaxial planer typeUnit: mmFor low-frequency amplification0.3+0.1 0.15+0.100.050.03 Features Large current capacitance Low collector to emitter saturation voltage1 2 Small type package, allowing downsizing and thinning of the(0.65) (0.65)equipment.1.30.12.00.210 Absolute Maximum Ratings Ta = 25CParame
2sb1678.pdf
Transistors2SB1678Silicon PNP epitaxial planer typeUnit: mmFor low-frequency amplification4.50.11.60.2 1.50.1 Features Low collector to emitter saturation voltage VCE(sat) Large Peak collector current ICP3 21 Mini power type package, allowing downsizing and thinning of the0.40.08 0.50.08 0.40.04equipment and automatic insertion through the tape pac
Datasheet: 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , B772 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .
