2SB170 Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: 2SB170  📄📄 

Material: Ge

Polaridad de transistor: PNP

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pc): 0.125 W

Tensión colector-base (Vcb): 30 V

Tensión emisor-base (Veb): 6 V

Corriente del colector DC máxima (Ic): 0.1 A

Temperatura operativa máxima (Tj): 85 °C

CARACTERÍSTICAS ELÉCTRICAS

Transición de frecuencia (fT): 0.7 MHz

Ganancia de corriente contínua (hFE): 20

Encapsulados: TO1

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2SB170 datasheet

 ..1. Size:73K  no
 2sb170 2sb171 2sb173 2sb175.pdf pdf_icon

2SB170

 0.1. Size:66K  rohm
 2sb1707.pdf pdf_icon

2SB170

2SB1707 Transistors Low frequency amplifier 2SB1707 External dimensions (Unit mm) Application Low frequency amplifier TSMT3 Driver 1.0MAX 2.9 0.85 0.7 0.4 ( ) 3 Features 1) A collector current is large. (4A) ( ) ( ) 2) VCE(sat) -250mV 1 2 0.95 0.95 0.16 At IC = -2A / IB = -40mA 1.9 (1) Base (2) Emitter Each lead has same dimensions (3) Collector

 0.2. Size:102K  rohm
 2sb1709.pdf pdf_icon

2SB170

2SB1709 Transistors Genera purpose amplification(-12V, -1.5A) 2SB1709 External dimensions (Unit mm) Application Low frequency amplifier TSMT3 Driver 1.0MAX 2.9 0.85 0.4 0.7 (3) Features 1) A collector current is large. 2) Collector saturation voltage is low. (1) (2) 0.95 0.95 VCE(sat) -200mV 0.16 1.9 (1) Base at IC = -500mA / IB = -25mA (2) Emitter Ea

 0.3. Size:66K  rohm
 2sb1705.pdf pdf_icon

2SB170

2SB1705 Transistors Low frequency amplifier 2SB1705 External dimensions (Unit mm) Application Low frequency amplifier TSMT3 Driver 1.0MAX 2.9 0.85 0.7 0.4 (3) Features 1) A collector current is large. ( ) ( ) 1 2 2) VCE(sat) -250mV 0.95 0.95 0.16 At IC=-1.5A / IB=-30mA 1.9 (1) Base (2) Emitter Each lead has same dimensions (3) Collector Equival

MOSTRAR MÁS

Otros transistores... 2SB165, 2SB1659, 2SB166, 2SB167, 2SB168, 2SB169, 2SB16A, 2SB17, 9014, 2SB171, 2SB172, 2SB172A, 2SB173, 2SB173B, 2SB174, 2SB175, 2SB176