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2SB170 Specs and Replacement


   Type Designator: 2SB170
   Material of Transistor: Ge
   Polarity: PNP
   Maximum Collector Power Dissipation (Pc): 0.125 W
   Maximum Collector-Base Voltage |Vcb|: 30 V
   Maximum Emitter-Base Voltage |Veb|: 6 V
   Maximum Collector Current |Ic max|: 0.1 A
   Max. Operating Junction Temperature (Tj): 85 °C
   Transition Frequency (ft): 0.7 MHz
   Forward Current Transfer Ratio (hFE), MIN: 20
   Noise Figure, dB: -
   Package: TO1
 

 2SB170 Substitution

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2SB170 detailed specifications

 0.1. Size:66K  rohm
2sb1707.pdf pdf_icon

2SB170

2SB1707 Transistors Low frequency amplifier 2SB1707 External dimensions (Unit mm) Application Low frequency amplifier TSMT3 Driver 1.0MAX 2.9 0.85 0.7 0.4 ( ) 3 Features 1) A collector current is large. (4A) ( ) ( ) 2) VCE(sat) -250mV 1 2 0.95 0.95 0.16 At IC = -2A / IB = -40mA 1.9 (1) Base (2) Emitter Each lead has same dimensions (3) Collector ... See More ⇒

 0.2. Size:102K  rohm
2sb1709.pdf pdf_icon

2SB170

2SB1709 Transistors Genera purpose amplification(-12V, -1.5A) 2SB1709 External dimensions (Unit mm) Application Low frequency amplifier TSMT3 Driver 1.0MAX 2.9 0.85 0.4 0.7 (3) Features 1) A collector current is large. 2) Collector saturation voltage is low. (1) (2) 0.95 0.95 VCE(sat) -200mV 0.16 1.9 (1) Base at IC = -500mA / IB = -25mA (2) Emitter Ea... See More ⇒

 0.3. Size:66K  rohm
2sb1705.pdf pdf_icon

2SB170

2SB1705 Transistors Low frequency amplifier 2SB1705 External dimensions (Unit mm) Application Low frequency amplifier TSMT3 Driver 1.0MAX 2.9 0.85 0.7 0.4 (3) Features 1) A collector current is large. ( ) ( ) 1 2 2) VCE(sat) -250mV 0.95 0.95 0.16 At IC=-1.5A / IB=-30mA 1.9 (1) Base (2) Emitter Each lead has same dimensions (3) Collector Equival... See More ⇒

Detailed specifications: 2SB165 , 2SB1659 , 2SB166 , 2SB167 , 2SB168 , 2SB169 , 2SB16A , 2SB17 , BC546 , 2SB171 , 2SB172 , 2SB172A , 2SB173 , 2SB173B , 2SB174 , 2SB175 , 2SB176 .

Keywords - 2SB170 transistor specs

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