View 2sk3565 datasheet:

iscN-Channel MOSFET Transistor 2SK3565I2SK3565FEATURESLow drain-source on-resistance:RDS(ON) =2.0 (typ.)Enhancement mode:Vth = 2.0 to 4.0V (VDS = 10 V, ID=1.0mA)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONSwitching Voltage RegulatorsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Drain-Source Voltage 900 VDSSV Gate-Source Voltage 30 VGSI Drain Current-Continuous 5 ADI Drain Current-Single Pulsed 15 ADMP Total Dissipation @T =25 45 WD CT Max. Operating Junction Temperature 150 jStorage Temperature -55~150 TstgTHERMAL CHARACTERISTICSSYMBOL PARAMETER MAX UNITChannel-to-case thermal resistance/WRth(ch-c) 2.78Channel-to-ambient thermal resistance/WRth(ch-a) 62.51isc websitewww.iscsemi.cn i

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