View 2sa1816 e datasheet:

Transistor2SA1816(Tentative)Silicon PNP epitaxial planer typeFor low-frequency high breakdown voltage amplificationUnit: mm4.0 0.2FeaturesHigh collector to emitter voltage VCEO.Absolute Maximum Ratings (Ta=25C)markingParameter Symbol Ratings Unit1 2 3Collector to base voltage VCBO 150 VCollector to emitter voltage VCEO 150 VEmitter to base voltage VEBO 5 V1.27 1.272.54 0.15Peak collector current ICP 100 mACollector current IC 50 mA1:EmitterCollector power dissipation PC 300 mW2:Collector EIAJ:SC72Junction temperature Tj 150 C3:Base New S Type PackageStorage temperature Tstg 55 ~ +150 CElectrical Characteristics (Ta=25C)Parameter Symbol Conditions min typ max UnitCollector cutoff current ICBO VCB = 100V, IE = 0 1 ACollector to emitter voltage VCEO IC = 100 A, IB = 0 150 VEmitter

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