SKM195GB062D PDF and Equivalents Search

 

SKM195GB062D Specs and Replacement

Type Designator: SKM195GB062D

Type: IGBT

Type of IGBT Channel: N

Absolute Maximum Ratings

Pc ⓘ - Maximum Power Dissipation: 700 W

|Vce|ⓘ - Maximum Collector-Emitter Voltage: 600 V

|Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V

|Ic| ⓘ - Maximum Collector Current: 230 A @25℃

Tj ⓘ - Maximum Junction Temperature: 150 ℃

Electrical Characteristics

|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 2.1 V @25℃

tr ⓘ - Rise Time, typ: 150 nS

Coesⓘ - Output Capacitance, typ: 1300 pF

Package: MODULE

 SKM195GB062D Substitution

- IGBTⓘ Cross-Reference Search

 

SKM195GB062D datasheet

 ..1. Size:137K  semikron
 skm195gal062d skm195gb062d.pdf pdf_icon

SKM195GB062D

SEMITRANS M Absolute Maximum Ratings Values PT-IGBT Modules Symbol Conditions 1) Units VCES 600 V VCGR RGE = 20 k 600 V SKM 195 GB 062 D IC Tcase = 25/60 C 230 / 195 A SKM 195 GAL 062 D 6) ICM Tcase = 25/60 C; tp = 1 ms 460 / 390 A VGES 20 V Ptot per IGBT, Tcase = 25 C 700 W Tj, (Tstg) 40 ... +150 (125) C Visol AC, 1 min. 2 500 V humidity DIN 40 040 Class F cl... See More ⇒

 4.1. Size:668K  semikron
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SKM195GB062D

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SKM195GB062D

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 6.1. Size:790K  semikron
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SKM195GB062D

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Specs: SKM150GB124D, SKM150GB125D, SKM150GB173D, SKM150GB174D, SKM195GAL062D, SKM195GAL063DN, SKM195GAL124DN, SKM195GAR063DN, GT30F124, SKM195GB063DN, SKM195GB124DN, SKM200GA123D, SKM200GAL123D, SKM200GAL173D, SKM200GAR123D, SKM200GAR173D, SKM200GAX173D

Keywords - SKM195GB062D transistor spec

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