SKM200GAR123D Specs and Replacement
Type Designator: SKM200GAR123D
Type: IGBT
Type of IGBT Channel: N
Absolute Maximum Ratings
Pc ⓘ - Maximum Power Dissipation: 1380 W
|Vce|ⓘ - Maximum Collector-Emitter Voltage: 1200 V
|Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
|Ic| ⓘ - Maximum Collector Current: 200 A @25℃
Tj ⓘ - Maximum Junction Temperature: 150 ℃
Electrical Characteristics
|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 2.5 V @25℃
tr ⓘ - Rise Time, typ: 100 nS
Coesⓘ - Output Capacitance, typ: 1500 pF
Package: MODULE SKM200GAR123D Substitution - IGBT ⓘ Cross-Reference Search
SKM200GAR123D datasheet
skm200gar12e4.pdf
SKM200GAR12E4 Absolute Maximum Ratings Symbol Conditions Values Unit IGBT VCES Tj =25 C 1200 V IC Tc =25 C 313 A Tj = 175 C Tc =80 C 241 A ICnom 200 A ICRM ICRM = 3xICnom 600 A VGES -20 ... 20 V VCC = 800 V SEMITRANS 3 tpsc VGE 15 V Tj =150 C 10 s VCES 1200 V Tj -40 ... 175 C IGBT4 Modules Inverse diode IF Tc =25 C 229 A Tj = 175 C SKM200GAR12E4 Tc =... See More ⇒
Specs: SKM195GAL124DN, SKM195GAR063DN, SKM195GB062D, SKM195GB063DN, SKM195GB124DN, SKM200GA123D, SKM200GAL123D, SKM200GAL173D, FGH60N60SMD, SKM200GAR173D, SKM200GAX173D, SKM200GAY173D, SKM200GB063D, SKM200GB123D, SKM200GB124D, SKM200GB173D, SKM200GB174D
Keywords - SKM200GAR123D transistor spec
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History: IXXK100N60B3H1
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