SKM200GAR123D Datasheet and Replacement
Type Designator: SKM200GAR123D
Type: IGBT
Type of IGBT Channel: N
Pc ⓘ - Maximum Power Dissipation: 1380 W
|Vce|ⓘ - Maximum Collector-Emitter Voltage: 1200 V
|Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
|Ic| ⓘ - Maximum Collector Current: 200 A @25℃
|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 2.5 V @25℃
Tj ⓘ - Maximum Junction Temperature: 150 ℃
tr ⓘ - Rise Time, typ: 100 nS
Coesⓘ - Output Capacitance, typ: 1500 pF
Package: MODULE
SKM200GAR123D substitution
SKM200GAR123D Datasheet (PDF)
skm200gar12e4.pdf
SKM200GAR12E4Absolute Maximum Ratings Symbol Conditions Values UnitIGBTVCES Tj =25C 1200 VIC Tc =25C 313 ATj = 175 CTc =80C 241 AICnom 200 AICRM ICRM = 3xICnom 600 AVGES -20 ... 20 VVCC = 800 VSEMITRANS 3tpsc VGE 15 V Tj =150C 10 sVCES 1200 VTj -40 ... 175 CIGBT4 ModulesInverse diodeIF Tc =25C 229 ATj = 175 CSKM200GAR12E4Tc =
Datasheet: SKM195GAL124DN , SKM195GAR063DN , SKM195GB062D , SKM195GB063DN , SKM195GB124DN , SKM200GA123D , SKM200GAL123D , SKM200GAL173D , MBQ60T65PES , SKM200GAR173D , SKM200GAX173D , SKM200GAY173D , SKM200GB063D , SKM200GB123D , SKM200GB124D , SKM200GB173D , SKM200GB174D .
History: IXSH50N60BS | IXGK35N120BD1 | VKI50-12P1 | NGTB40N60L2 | IXSH10N120A | 1MBC03-120 | FGHL75T65MQD
Keywords - SKM200GAR123D transistor datasheet
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History: IXSH50N60BS | IXGK35N120BD1 | VKI50-12P1 | NGTB40N60L2 | IXSH10N120A | 1MBC03-120 | FGHL75T65MQD
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IGBT: JJT40N120SE | JJT40N120HE | JJT30N65UE | JJT30N65SY | JJT30N65SS | JJT30N65SE | JJT40N65UH | JJT40N65UE | JJT40N65LE | JJT40N65HE | JJT40N135UE
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