SKM200GAR173D Datasheet and Replacement
Type Designator: SKM200GAR173D
Type: IGBT + Anti-Parallel Diode
Type of IGBT Channel: N
Pc ⓘ - Maximum Power Dissipation: 1250 W
|Vce|ⓘ - Maximum Collector-Emitter Voltage: 1700 V
|Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
|Ic| ⓘ - Maximum Collector Current: 220 A @25℃
|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 3.4 V @25℃
|VGEth|ⓘ - Maximum G-E Threshold Voltag: 6.2 V
Tj ⓘ - Maximum Junction Temperature: 150 ℃
tr ⓘ - Rise Time, typ: 100 nS
Coesⓘ - Output Capacitance, typ: 2000 pF
Package: MODULE
SKM200GAR173D substitution
SKM200GAR173D Datasheet (PDF)
skm200gar12e4.pdf
SKM200GAR12E4Absolute Maximum Ratings Symbol Conditions Values UnitIGBTVCES Tj =25C 1200 VIC Tc =25C 313 ATj = 175 CTc =80C 241 AICnom 200 AICRM ICRM = 3xICnom 600 AVGES -20 ... 20 VVCC = 800 VSEMITRANS 3tpsc VGE 15 V Tj =150C 10 sVCES 1200 VTj -40 ... 175 CIGBT4 ModulesInverse diodeIF Tc =25C 229 ATj = 175 CSKM200GAR12E4Tc =
Datasheet: SKM195GAR063DN , SKM195GB062D , SKM195GB063DN , SKM195GB124DN , SKM200GA123D , SKM200GAL123D , SKM200GAL173D , SKM200GAR123D , FGD4536 , SKM200GAX173D , SKM200GAY173D , SKM200GB063D , SKM200GB123D , SKM200GB124D , SKM200GB173D , SKM200GB174D , SKM200GBD123D1S .
History: 2MBI400VD-060-50 | MKI50-12E7 | SPT25N120T1 | IXGK320N60A3 | BSM150GB60DLC | FGAF30S65AQ | 1MBI400U4-120
Keywords - SKM200GAR173D transistor datasheet
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SKM200GAR173D lookup
SKM200GAR173D substitution
SKM200GAR173D replacement
History: 2MBI400VD-060-50 | MKI50-12E7 | SPT25N120T1 | IXGK320N60A3 | BSM150GB60DLC | FGAF30S65AQ | 1MBI400U4-120
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