SKM200GAR173D PDF and Equivalents Search

 

SKM200GAR173D Specs and Replacement

Type Designator: SKM200GAR173D

Type: IGBT

Type of IGBT Channel: N

Absolute Maximum Ratings

Pc ⓘ - Maximum Power Dissipation: 1250 W

|Vce|ⓘ - Maximum Collector-Emitter Voltage: 1700 V

|Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V

|Ic| ⓘ - Maximum Collector Current: 220 A @25℃

Tj ⓘ - Maximum Junction Temperature: 150 ℃

Electrical Characteristics

|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 3.4 V @25℃

tr ⓘ - Rise Time, typ: 100 nS

Coesⓘ - Output Capacitance, typ: 2000 pF

Package: MODULE

 SKM200GAR173D Substitution

- IGBTⓘ Cross-Reference Search

 

SKM200GAR173D datasheet

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SKM200GAR173D

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SKM200GAR173D

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SKM200GAR173D

SKM200GAR12E4 Absolute Maximum Ratings Symbol Conditions Values Unit IGBT VCES Tj =25 C 1200 V IC Tc =25 C 313 A Tj = 175 C Tc =80 C 241 A ICnom 200 A ICRM ICRM = 3xICnom 600 A VGES -20 ... 20 V VCC = 800 V SEMITRANS 3 tpsc VGE 15 V Tj =150 C 10 s VCES 1200 V Tj -40 ... 175 C IGBT4 Modules Inverse diode IF Tc =25 C 229 A Tj = 175 C SKM200GAR12E4 Tc =... See More ⇒

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SKM200GAR173D

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Specs: SKM195GAR063DN, SKM195GB062D, SKM195GB063DN, SKM195GB124DN, SKM200GA123D, SKM200GAL123D, SKM200GAL173D, SKM200GAR123D, GT50JR22, SKM200GAX173D, SKM200GAY173D, SKM200GB063D, SKM200GB123D, SKM200GB124D, SKM200GB173D, SKM200GB174D, SKM200GBD123D1S

Keywords - SKM200GAR173D transistor spec

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