SKM200GB123D Datasheet and Replacement
Type Designator: SKM200GB123D
Type: IGBT + Anti-Parallel Diode
Type of IGBT Channel: N
Pcⓘ - Maximum Power Dissipation: 1380 W
|Vce|ⓘ - Maximum Collector-Emitter Voltage: 1200 V
|Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
|Ic|ⓘ - Maximum Collector Current: 200 A @25℃
|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 2.5 V @25℃
|VGEth|ⓘ - Maximum G-E Threshold Voltag: 6.5 V
Tjⓘ - Maximum Junction Temperature: 150 ℃
trⓘ - Rise Time, typ: 100 nS
Coesⓘ - Output Capacitance, typ: 1500 pF
Qgⓘ - Total Gate Charge, typ: 1500 nC
Package: MODULE
- IGBT Cross-Reference
SKM200GB123D Datasheet (PDF)
skm200gb12e4.pdf

SKM200GB12E4Absolute Maximum Ratings Symbol Conditions Values UnitIGBTVCES 1200 VIC Tc =25C 314 ATj = 175 CTc =80C 242 AICnom 200 AICRM ICRM = 3xICnom 600 AVGES -20 ... 20 VVCC = 800 VSEMITRANS3tpsc VGE 15 V Tj = 150 C 10 sVCES 1200 VTj -40 ... 175 CIGBT4 ModulesInverse diodeIF Tc =25C 229 ATj = 175 CSKM200GB12E4Tc =80C 172 A
skm200gb12t4.pdf

SKM200GB12T4Absolute Maximum Ratings Symbol Conditions Values UnitIGBTVCES 1200 VIC Tc =25C 314 ATj = 175 CTc =80C 242 AICnom 200 AICRM ICRM = 3xICnom 600 AVGES -20 ... 20 VVCC = 800 VSEMITRANS3tpsc VGE 15 V Tj = 150 C 10 sVCES 1200 VTj -40 ... 175 CFast IGBT4 ModulesInverse diodeIF Tc =25C 229 ATj = 175 CSKM200GB12T4Tc =80C
Datasheet: SKM200GA123D , SKM200GAL123D , SKM200GAL173D , SKM200GAR123D , SKM200GAR173D , SKM200GAX173D , SKM200GAY173D , SKM200GB063D , SGT40N60NPFDPN , SKM200GB124D , SKM200GB173D , SKM200GB174D , SKM200GBD123D1S , FGH50N6S2D , SKM22GD123D , SKM300GA123D , SKM300GA173D .
History: IXGH28N120B | IXGT40N60C2D1 | 1MB08D-120 | IXGH64N60A3 | APT15GT60KRG | DM2G50SH12A | DM2G75SH6A
Keywords - SKM200GB123D transistor datasheet
SKM200GB123D cross reference
SKM200GB123D equivalent finder
SKM200GB123D lookup
SKM200GB123D substitution
SKM200GB123D replacement
History: IXGH28N120B | IXGT40N60C2D1 | 1MB08D-120 | IXGH64N60A3 | APT15GT60KRG | DM2G50SH12A | DM2G75SH6A



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