All IGBT. SKM200GB123D Datasheet

 

SKM200GB123D IGBT. Datasheet pdf. Equivalent


   Type Designator: SKM200GB123D
   Type: IGBT + Anti-Parallel Diode
   Type of IGBT Channel: N
   Pcⓘ - Maximum Power Dissipation: 1380 W
   |Vce|ⓘ - Maximum Collector-Emitter Voltage: 1200 V
   |Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
   |Ic|ⓘ - Maximum Collector Current: 200 A @25℃
   |VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 2.5 V @25℃
   |VGEth|ⓘ - Maximum G-E Threshold Voltag: 6.5 V
   Tjⓘ - Maximum Junction Temperature: 150 ℃
   trⓘ - Rise Time, typ: 100 nS
   Coesⓘ - Output Capacitance, typ: 1500 pF
   Qgⓘ - Total Gate Charge, typ: 1500 nC
   Package: MODULE

 SKM200GB123D Transistor Equivalent Substitute - IGBT Cross-Reference Search

 

SKM200GB123D Datasheet (PDF)

 ..1. Size:635K  semikron
 skm200gb123d.pdf

SKM200GB123D SKM200GB123D

 4.1. Size:713K  semikron
 skm200gb124d.pdf

SKM200GB123D SKM200GB123D

 4.2. Size:378K  semikron
 skm200gb12e4.pdf

SKM200GB123D SKM200GB123D

SKM200GB12E4Absolute Maximum Ratings Symbol Conditions Values UnitIGBTVCES 1200 VIC Tc =25C 314 ATj = 175 CTc =80C 242 AICnom 200 AICRM ICRM = 3xICnom 600 AVGES -20 ... 20 VVCC = 800 VSEMITRANS3tpsc VGE 15 V Tj = 150 C 10 sVCES 1200 VTj -40 ... 175 CIGBT4 ModulesInverse diodeIF Tc =25C 229 ATj = 175 CSKM200GB12E4Tc =80C 172 A

 4.3. Size:379K  semikron
 skm200gb12t4.pdf

SKM200GB123D SKM200GB123D

SKM200GB12T4Absolute Maximum Ratings Symbol Conditions Values UnitIGBTVCES 1200 VIC Tc =25C 314 ATj = 175 CTc =80C 242 AICnom 200 AICRM ICRM = 3xICnom 600 AVGES -20 ... 20 VVCC = 800 VSEMITRANS3tpsc VGE 15 V Tj = 150 C 10 sVCES 1200 VTj -40 ... 175 CFast IGBT4 ModulesInverse diodeIF Tc =25C 229 ATj = 175 CSKM200GB12T4Tc =80C

 4.4. Size:684K  semikron
 skm200gb125d.pdf

SKM200GB123D SKM200GB123D

 4.5. Size:664K  semikron
 skm200gb126d.pdf

SKM200GB123D SKM200GB123D

 4.6. Size:446K  semikron
 skm200gb12v.pdf

SKM200GB123D SKM200GB123D

SKM200GB12VAbsolute Maximum Ratings Symbol Conditions Values UnitIGBTVCES Tj =25C 1200 VIC Tc =25C 311 ATj = 175 CTc =80C 237 AICnom 200 AICRM ICRM = 3xICnom 600 AVGES -20 ... 20 VVCC = 720 VSEMITRANS 3tpsc VGE 20 V Tj =125C 10 sVCES 1200 VTj -40 ... 175 CInverse diodeIF Tc =25C 229 ATj = 175 CSKM200GB12VTc =80C 172 AIFnom

Datasheet: SKM200GA123D , SKM200GAL123D , SKM200GAL173D , SKM200GAR123D , SKM200GAR173D , SKM200GAX173D , SKM200GAY173D , SKM200GB063D , SGT50T65FD1PT , SKM200GB124D , SKM200GB173D , SKM200GB174D , SKM200GBD123D1S , FGH50N6S2D , SKM22GD123D , SKM300GA123D , SKM300GA173D .

 

 
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