SKM200GB173D Datasheet and Replacement
Type Designator: SKM200GB173D
Type: IGBT
Type of IGBT Channel: N
Pc ⓘ - Maximum Power Dissipation: 1250 W
|Vce|ⓘ - Maximum Collector-Emitter Voltage: 1700 V
|Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
|Ic| ⓘ - Maximum Collector Current: 220 A @25℃
|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 3.4 V @25℃
Tj ⓘ - Maximum Junction Temperature: 150 ℃
tr ⓘ - Rise Time, typ: 100 nS
Coesⓘ - Output Capacitance, typ: 2000 pF
Package: MODULE
SKM200GB173D substitution
SKM200GB173D Datasheet (PDF)
Datasheet: SKM200GAL173D , SKM200GAR123D , SKM200GAR173D , SKM200GAX173D , SKM200GAY173D , SKM200GB063D , SKM200GB123D , SKM200GB124D , SGT50T65FD1PT , SKM200GB174D , SKM200GBD123D1S , FGH50N6S2D , SKM22GD123D , SKM300GA123D , SKM300GA173D , SKM300GAL063D , SKM300GAL123D .
History: MMG40H120XB6TN | IXGT72N60B3 | CM100RX-24S | APTGT150SK170D1 | SIB30N65G21F | IHW15N120R2 | SKM195GAL063DN
Keywords - SKM200GB173D transistor datasheet
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SKM200GB173D lookup
SKM200GB173D substitution
SKM200GB173D replacement
History: MMG40H120XB6TN | IXGT72N60B3 | CM100RX-24S | APTGT150SK170D1 | SIB30N65G21F | IHW15N120R2 | SKM195GAL063DN
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IGBT: JJT40N120SE | JJT40N120HE | JJT30N65UE | JJT30N65SY | JJT30N65SS | JJT30N65SE | JJT40N65UH | JJT40N65UE | JJT40N65LE | JJT40N65HE | JJT40N135UE
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