SKM75GAL123D Datasheet and Replacement
Type Designator: SKM75GAL123D
Type: IGBT
Type of IGBT Channel: N
Pc ⓘ - Maximum Power Dissipation: 460 W
|Vce|ⓘ - Maximum Collector-Emitter Voltage: 1200 V
|Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
|Ic| ⓘ - Maximum Collector Current: 75 A @25℃
|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 2.5 V @25℃
Tj ⓘ - Maximum Junction Temperature: 150 ℃
tr ⓘ - Rise Time, typ: 56 nS
Coesⓘ - Output Capacitance, typ: 500 pF
Package: MODULE
SKM75GAL123D substitution
SKM75GAL123D Datasheet (PDF)
Datasheet: SKM500GA174D , SKM50GAL123D , SKM50GB063D , SKM50GB123D , SKM50GD063DL , SKM50GDL063DL , SKM50GH063DL , SKM75GAL063D , RJH60F7BDPQ-A0 , BRG60N65D , SKM75GB063D , SKM75GB123D , SKM75GB124D , SKM75GB173D , SKM75GD123D , SKM75GD124D , SKM75GDL123D .
History: IRGP4660DPBF | FF100R12KS4 | 2MBI75L-120 | NCE100ED75VT4 | SMBH1G50US120 | FF1200R17KE3_B2 | SKM300GAR063D
Keywords - SKM75GAL123D transistor datasheet
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SKM75GAL123D lookup
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SKM75GAL123D replacement
History: IRGP4660DPBF | FF100R12KS4 | 2MBI75L-120 | NCE100ED75VT4 | SMBH1G50US120 | FF1200R17KE3_B2 | SKM300GAR063D
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IGBT: JJT40N120SE | JJT40N120HE | JJT30N65UE | JJT30N65SY | JJT30N65SS | JJT30N65SE | JJT40N65UH | JJT40N65UE | JJT40N65LE | JJT40N65HE | JJT40N135UE
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