SKM75GAL123D Specs and Replacement
Type Designator: SKM75GAL123D
Type: IGBT
Type of IGBT Channel: N
Absolute Maximum Ratings
Pc ⓘ - Maximum Power Dissipation: 460 W
|Vce|ⓘ - Maximum Collector-Emitter Voltage: 1200 V
|Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
|Ic| ⓘ - Maximum Collector Current: 75 A @25℃
Tj ⓘ - Maximum Junction Temperature: 150 ℃
Electrical Characteristics
|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 2.5 V @25℃
tr ⓘ - Rise Time, typ: 56 nS
Coesⓘ - Output Capacitance, typ: 500 pF
Package: MODULE SKM75GAL123D Substitution - IGBT ⓘ Cross-Reference Search
SKM75GAL123D datasheet
Specs: SKM500GA174D, SKM50GAL123D, SKM50GB063D, SKM50GB123D, SKM50GD063DL, SKM50GDL063DL, SKM50GH063DL, SKM75GAL063D, RJH60F7BDPQ-A0, BRG60N65D, SKM75GB063D, SKM75GB123D, SKM75GB124D, SKM75GB173D, SKM75GD123D, SKM75GD124D, SKM75GDL123D
Keywords - SKM75GAL123D transistor spec
SKM75GAL123D cross reference
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