SMBH1G200US60 Datasheet and Replacement
Type Designator: SMBH1G200US60
Type: IGBT
Type of IGBT Channel: N
|Vce|ⓘ - Maximum Collector-Emitter Voltage: 600 V
|Ic|ⓘ - Maximum Collector Current: 200 A @25℃
|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 2.1 V @25℃
Tjⓘ - Maximum Junction Temperature: 150 ℃
trⓘ - Rise Time, typ: 100 nS
Package: 7PM-BB
- IGBT Cross-Reference
SMBH1G200US60 Datasheet (PDF)
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Datasheet: SM2G50US60 , SM2G75US120 , SM2G75US60 , SMBH1G100US120 , SMBH1G100US60 , SMBH1G150US120 , SMBH1G150US60 , SMBH1G200US120 , IRG4PF50W , SMBH1G300US60 , SMBH1G400US60 , SMBH1G50US120 , SMBH1G50US60 , SMBH1G75US120 , SMBH1G75US60 , SMBL1G100US120 , SMBL1G100US60 .
History: MMG75WD120XB6TC | IXST35N120B | SGTP75V65SDS1P7 | MSG100D350FHS | JT020N065SED | MSG20T65HPT1 | MSG40T120FQC
Keywords - SMBH1G200US60 transistor datasheet
SMBH1G200US60 cross reference
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SMBH1G200US60 replacement
History: MMG75WD120XB6TC | IXST35N120B | SGTP75V65SDS1P7 | MSG100D350FHS | JT020N065SED | MSG20T65HPT1 | MSG40T120FQC
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