1MB05D-120 Datasheet. Specs and Replacement

Type Designator: 1MB05D-120  📄📄 

Type: IGBT + Anti-Parallel Diode

Type of IGBT Channel: N

Absolute Maximum Ratings

Pc ⓘ - Maximum Power Dissipation: 100 W

|Vce|ⓘ - Maximum Collector-Emitter Voltage: 1200 V

|Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V

|Ic| ⓘ - Maximum Collector Current: 9 A @25℃

Tj ⓘ - Maximum Junction Temperature: 150 ℃

Electrical Characteristics

|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 3.5 V @25℃

|VGEth|ⓘ - Maximum G-E Threshold Voltag: 8.5 V

tr ⓘ - Rise Time, typ: 600 nS

Coesⓘ - Output Capacitance, typ: 150 pF

Package: TO3P

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1MB05D-120 datasheet

 ..1. Size:214K  fuji
 1mb05d-120.pdf pdf_icon

1MB05D-120

Fuji Discrete Package IGBT n Outline Drawing n n Features n Square RBSOA Low Saturation Voltage Less Total Power Dissipation Minimized Internal Stray Inductance n Applications n High Power Switching A.C. Motor Controls D.C. Motor Controls Uninterruptible Power Supply n Maximum Ratings and Characteristics n Equivalent Circuit n n Absolute Maxim... See More ⇒

 9.1. Size:194K  fuji
 1mb05-120.pdf pdf_icon

1MB05D-120

Fuji Discrete Package IGBT n Outline Drawing n n Features n Square RBSOA Low Saturation Voltage Less Total Power Dissipation Minimized Internal Stray Inductance n Applications n High Power Switching A.C. Motor Controls D.C. Motor Controls Uninterruptible Power Supply n Maximum Ratings and Characteristics n Equivalent Circuit n n Absolute Maxim... See More ⇒

Specs: TGHP75N120F2D, TGHP75N120FDR, TGL75N120FDR, TGPF15N60FDR, TGPF20N60FDR, TGH80N65F2D2, 1MB03D-120, 1MB05-120, GT50JR22, 1MB08-120, 1MB08D-120, 1MB10-120, 1MB10D-120, 1MB15D-060, 1MB20-060, 1MB20D-060, 1MB30-060

Keywords - 1MB05D-120 transistor spec

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