SME6G30US60 Spec and Replacement
Type Designator: SME6G30US60
Type: IGBT
Type of IGBT Channel: N
|Vce|ⓘ - Maximum Collector-Emitter Voltage: 600 V
|Ic| ⓘ - Maximum Collector Current: 30 A @25℃
|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 2 V @25℃
Tj ⓘ - Maximum Junction Temperature: 150 ℃
tr ⓘ - Rise Time, typ: 80 nS
Package: 17PM-CA
SME6G30US60 Transistor Equivalent Substitute - IGBT Cross-Reference Search
SME6G30US60 specs
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Specs: SMC7G5US120 , SME6G10US120 , SME6G10US60 , SME6G15US120 , SME6G15US60 , SME6G20US120 , SME6G20US60 , SME6G25US120 , CRG60T60AN3H , SME6G50US60 , SME6G5US120 , SNG201017 , SNG201025 , SNG20620A , SNG301010 , SNG30610 , SNG30610A .
History: SME6G25US120
Keywords - SME6G30US60 transistor spec
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History: SME6G25US120
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IGBT: JJT40N120SE | JJT40N120HE | JJT30N65UE
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