STGB7NB60HD Datasheet and Replacement
Type Designator: STGB7NB60HD
Type: IGBT + Anti-Parallel Diode
Type of IGBT Channel: N
Pcⓘ - Maximum Power Dissipation: 80 W
|Vce|ⓘ - Maximum Collector-Emitter Voltage: 600 V
|Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
|Ic|ⓘ - Maximum Collector Current: 14 A @25℃
|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 2.8 V @25℃
|VGEth|ⓘ - Maximum G-E Threshold Voltag: 5 V
Tjⓘ - Maximum Junction Temperature: 150 ℃
trⓘ - Rise Time, typ: 15 nS
Coesⓘ - Output Capacitance, typ: 390pF pF
Qgⓘ - Total Gate Charge, typ: 42 nC
Package: D2PAK
STGB7NB60HD Datasheet (PDF)
stgb7nb60hd.pdf

STGB7NB60HDN-CHANNEL 7A - 600V DPAK PowerMESH IGBTTYPE VCES VCE(sat) ICSTGB7NB60HD 600 V
stgb7nb60.pdf

STGB7NB60HD N-CHANNEL 7A - 600V - DPAKPowerMESH IGBTTYPE VCES VCE(sat) ICSTGB7NB60HD 600 V
stgb7nb40lz.pdf

STGB7NB40LZN-CHANNEL CLAMPED 14A - D2PAKINTERNALLY CLAMPED PowerMESH IGBTTYPE VCES VCE(sat) ICSTGB7NB40LZ CLAMPED
stgp7nc60hd stgf7nc60hd stgb7nc60hd.pdf

STGP7NC60HDSTGF7NC60HD - STGB7NC60HDN-CHANNEL 14A - 600V - TO-220/TO-220FP/DPAKVery Fast PowerMESH IGBTTable 1: General Features Figure 1: PackageTYPE VCES VCE(sat) (Max) IC @25C @100CSTGP7NC60HD 600 V
Datasheet: SNG401225 , SNG40660 , STGB10N60L , STGB10NB37LZ , STGB20NB32LZ , STGB20NB37LZ , STGB30NB60H , STGB3NB60HD , CRG60T60AN3H , STGD3NB60S , STGD7NB60H , STGP10N60L , STGP7NB60HD , STGP7NB60HDFP , STGW12NB60H , STGW20NB60H , STGW20NB60HD .
Keywords - STGB7NB60HD transistor datasheet
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