STGD3NB60S Datasheet and Replacement
Type Designator: STGD3NB60S
Type: IGBT
Type of IGBT Channel: N
Pcⓘ - Maximum Power Dissipation: 40 W
|Vce|ⓘ - Maximum Collector-Emitter Voltage: 600 V
|Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
|Ic|ⓘ - Maximum Collector Current: 3 A @25℃
|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 1.5 V @25℃
Tjⓘ - Maximum Junction Temperature: 150 ℃
trⓘ - Rise Time, typ: 170 nS
Coesⓘ - Output Capacitance, typ: 255pF pF
Package: TO252
- IGBT Cross-Reference
STGD3NB60S Datasheet (PDF)
stgd3nb60sd.pdf
STGD3NB60SDN-CHANNEL 3A - 600V - DPAKPowerMESH IGBTTYPE VCES VCE(sat) ICSTGD3NB60SD 600 V
stgp3nb60s-stgd3nb60s.pdf
STGP3NB60SSTGD3NB60SN-CHANNEL 3A - 600V - TO-220 / DPAKPowerMESH IGBTTYPE VCES VCE(sat) ICSTGP3NB60S 600 V
stgd3nb60h.pdf
STGD3NB60HN-CHANNEL 3A - 600V - DPAKPowerMESH IGBTTYPE VCES VCE(sat) ICSTD3NB60H 600 V
Datasheet: SNG40660 , STGB10N60L , STGB10NB37LZ , STGB20NB32LZ , STGB20NB37LZ , STGB30NB60H , STGB3NB60HD , STGB7NB60HD , MBQ50T65FDSC , STGD7NB60H , STGP10N60L , STGP7NB60HD , STGP7NB60HDFP , STGW12NB60H , STGW20NB60H , STGW20NB60HD , STGW30NB60HD .
Keywords - STGD3NB60S transistor datasheet
STGD3NB60S cross reference
STGD3NB60S equivalent finder
STGD3NB60S lookup
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