STGD3NB60S Specs and Replacement
Type Designator: STGD3NB60S
Type: IGBT
Type of IGBT Channel: N
Absolute Maximum Ratings
Pc ⓘ - Maximum Power Dissipation: 40 W
|Vce|ⓘ - Maximum Collector-Emitter Voltage: 600 V
|Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
|Ic| ⓘ - Maximum Collector Current: 3 A @25℃
Tj ⓘ - Maximum Junction Temperature: 150 ℃
Electrical Characteristics
|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 1.5 V @25℃
tr ⓘ - Rise Time, typ: 170 nS
Coesⓘ - Output Capacitance, typ: 255pF pF
Package: TO252
STGD3NB60S Substitution - IGBT ⓘ Cross-Reference Search
STGD3NB60S datasheet
stgd3nb60sd.pdf
STGD3NB60SD N-CHANNEL 3A - 600V - DPAK PowerMESH IGBT TYPE VCES VCE(sat) IC STGD3NB60SD 600 V ... See More ⇒
stgp3nb60s-stgd3nb60s.pdf
STGP3NB60S STGD3NB60S N-CHANNEL 3A - 600V - TO-220 / DPAK PowerMESH IGBT TYPE VCES VCE(sat) IC STGP3NB60S 600 V ... See More ⇒
stgd3nb60h.pdf
STGD3NB60H N-CHANNEL 3A - 600V - DPAK PowerMESH IGBT TYPE VCES VCE(sat) IC STD3NB60H 600 V ... See More ⇒
Specs: SNG40660 , STGB10N60L , STGB10NB37LZ , STGB20NB32LZ , STGB20NB37LZ , STGB30NB60H , STGB3NB60HD , STGB7NB60HD , RJH3047 , STGD7NB60H , STGP10N60L , STGP7NB60HD , STGP7NB60HDFP , STGW12NB60H , STGW20NB60H , STGW20NB60HD , STGW30NB60HD .
History: IXSQ10N60B2D1 | IXSK80N60B | SNG40660
Keywords - STGD3NB60S transistor spec
STGD3NB60S cross reference
STGD3NB60S equivalent finder
STGD3NB60S lookup
STGD3NB60S substitution
STGD3NB60S replacement
History: IXSQ10N60B2D1 | IXSK80N60B | SNG40660
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