FGA20N120FTD PDF Specs and Replacement
Type Designator: FGA20N120FTD
Type: IGBT
Type of IGBT Channel: N
Absolute Maximum Ratings
Pc ⓘ - Maximum Power Dissipation: 298 W
|Vce|ⓘ - Maximum Collector-Emitter Voltage: 1200 V
|Vge|ⓘ - Maximum Gate-Emitter Voltage: 25 V
|Ic| ⓘ - Maximum Collector Current: 40 A @25℃
Tj ⓘ - Maximum Junction Temperature: 150 ℃
Electrical Characteristics
|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 1.6 V @25℃
tr ⓘ - Rise Time, typ: 79 nS
Coesⓘ - Output Capacitance, typ: 95 pF
Package: TO3PN
FGA20N120FTD Substitution
FGA20N120FTD PDF specs
fga20n120ftd.pdf
December 2007 FGA20N120FTD tm 1200V, 20A Trench IGBT Features Field stop trench technology General Description High speed switching Using advanced field stop trench technology, Fairchild s 1200V Low saturation voltage VCE(sat) =1.6V @ IC = 20A trench IGBTs offer superior conduction and switching perfor- High input impedance mances, and easy parallel operation wi... See More ⇒
fga20s120m.pdf
April 2010 FGA20S120M tm TM 1200V, 20A ShortedAnode IGBT Features General Description High speed switching Using advanced Field Stop Trench and ShortedAnode technol- ogy, Fairchild s 1200V ShortedAnodeTM Trench IGBTs offer Low saturation voltage VCE(sat) =1.55V @ IC = 20A superior conduction and switching performances, and easy par- High input impedance allel operation... See More ⇒
Specs: TA49119 , TA49121 , TA49123 , TA49182 , TA9895 , FGA15N120ANTDTU-F109 , FGA15N120FTD , FGA180N33ATD , AOK40B65H2AL , FGA20S120M , FGA25N120ANTD , FGA25N120ANTDTU-F109 , FGA25N120FTD , FGA30N120FTD , FGA30N60LSD , FGA50N100BNT , FGA50N100BNTD .
Keywords - FGA20N120FTD transistor spec
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IGBT: JJT40N120SE | JJT40N120HE | JJT30N65UE
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