All IGBT. FGA20N120FTD Datasheet

 

FGA20N120FTD Datasheet and Replacement


   Type Designator: FGA20N120FTD
   Type: IGBT + Anti-Parallel Diode
   Type of IGBT Channel: N
   Pc ⓘ - Maximum Power Dissipation: 298 W
   |Vce|ⓘ - Maximum Collector-Emitter Voltage: 1200 V
   |Vge|ⓘ - Maximum Gate-Emitter Voltage: 25 V
   |Ic| ⓘ - Maximum Collector Current: 40 A @25℃
   |VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 1.6 V @25℃
   |VGEth|ⓘ - Maximum G-E Threshold Voltag: 7.5 V
   Tj ⓘ - Maximum Junction Temperature: 150 ℃
   tr ⓘ - Rise Time, typ: 79 nS
   Coesⓘ - Output Capacitance, typ: 95 pF
   Qg ⓘ - Total Gate Charge, typ: 137 nC
   Package: TO3PN
 
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FGA20N120FTD Datasheet (PDF)

 ..1. Size:715K  fairchild semi
 fga20n120ftd.pdf pdf_icon

FGA20N120FTD

December 2007FGA20N120FTDtm1200V, 20A Trench IGBTFeatures Field stop trench technologyGeneral Description High speed switchingUsing advanced field stop trench technology, Fairchilds 1200V Low saturation voltage: VCE(sat) =1.6V @ IC = 20Atrench IGBTs offer superior conduction and switching perfor- High input impedancemances, and easy parallel operation wi

 9.1. Size:780K  fairchild semi
 fga20s120m.pdf pdf_icon

FGA20N120FTD

April 2010FGA20S120MtmTM1200V, 20A ShortedAnode IGBTFeatures General Description High speed switching Using advanced Field Stop Trench and ShortedAnode technol-ogy, Fairchilds 1200V ShortedAnodeTM Trench IGBTs offer Low saturation voltage: VCE(sat) =1.55V @ IC = 20Asuperior conduction and switching performances, and easy par- High input impedanceallel operation

Datasheet: TA49119 , TA49121 , TA49123 , TA49182 , TA9895 , FGA15N120ANTDTU-F109 , FGA15N120FTD , FGA180N33ATD , FGL60N100BNTD , FGA20S120M , FGA25N120ANTD , FGA25N120ANTDTU-F109 , FGA25N120FTD , FGA30N120FTD , FGA30N60LSD , FGA50N100BNT , FGA50N100BNTD .

Keywords - FGA20N120FTD transistor datasheet

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