FGA20N120FTD - IGBT. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: FGA20N120FTD
Tipo de transistor: IGBT
Polaridad de transistor: N
ESPECIFICACIONES TECNICAS
Pcⓘ - Máxima potencia disipada: 298 W
|Vce|ⓘ - Tensión máxima colector-emisor: 1200 V
|Vge|ⓘ - Tensión máxima puerta-emisor: 25 V
|Ic|ⓘ - Colector de Corriente Continua a 25℃: 40 A
|VCEsat|ⓘ - Voltaje de saturación colector-emisor, typ: 1.6 V @25℃
Tjⓘ - Temperatura máxima de unión: 150 ℃
trⓘ - Tiempo de subida, typ: 79 nS
Coesⓘ - Capacitancia de salida, typ: 95 pF
Paquete / Cubierta: TO3PN
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FGA20N120FTD Datasheet (PDF)
fga20n120ftd.pdf
December 2007FGA20N120FTDtm1200V, 20A Trench IGBTFeatures Field stop trench technologyGeneral Description High speed switchingUsing advanced field stop trench technology, Fairchilds 1200V Low saturation voltage: VCE(sat) =1.6V @ IC = 20Atrench IGBTs offer superior conduction and switching perfor- High input impedancemances, and easy parallel operation wi
fga20s120m.pdf
April 2010FGA20S120MtmTM1200V, 20A ShortedAnode IGBTFeatures General Description High speed switching Using advanced Field Stop Trench and ShortedAnode technol-ogy, Fairchilds 1200V ShortedAnodeTM Trench IGBTs offer Low saturation voltage: VCE(sat) =1.55V @ IC = 20Asuperior conduction and switching performances, and easy par- High input impedanceallel operation
Otros transistores... TA49119 , TA49121 , TA49123 , TA49182 , TA9895 , FGA15N120ANTDTU-F109 , FGA15N120FTD , FGA180N33ATD , YGW40N65F1A1 , FGA20S120M , FGA25N120ANTD , FGA25N120ANTDTU-F109 , FGA25N120FTD , FGA30N120FTD , FGA30N60LSD , FGA50N100BNT , FGA50N100BNTD .
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