All IGBT. FGA20S120M Datasheet

 

FGA20S120M Datasheet and Replacement


   Type Designator: FGA20S120M
   Type: IGBT
   Type of IGBT Channel: N
   Pcⓘ - Maximum Power Dissipation: 348 W
   |Vce|ⓘ - Maximum Collector-Emitter Voltage: 1200 V
   |Vge|ⓘ - Maximum Gate-Emitter Voltage: 25 V
   |Ic|ⓘ - Maximum Collector Current: 40 A @25℃
   |VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 1.55 V @25℃
   Tjⓘ - Maximum Junction Temperature: 175 ℃
   trⓘ - Rise Time, typ: 176 nS
   Coesⓘ - Output Capacitance, typ: 53 pF
   Package: TO3PN
      - IGBT Cross-Reference

 

FGA20S120M Datasheet (PDF)

 ..1. Size:780K  fairchild semi
 fga20s120m.pdf pdf_icon

FGA20S120M

April 2010FGA20S120MtmTM1200V, 20A ShortedAnode IGBTFeatures General Description High speed switching Using advanced Field Stop Trench and ShortedAnode technol-ogy, Fairchilds 1200V ShortedAnodeTM Trench IGBTs offer Low saturation voltage: VCE(sat) =1.55V @ IC = 20Asuperior conduction and switching performances, and easy par- High input impedanceallel operation

 9.1. Size:715K  fairchild semi
 fga20n120ftd.pdf pdf_icon

FGA20S120M

December 2007FGA20N120FTDtm1200V, 20A Trench IGBTFeatures Field stop trench technologyGeneral Description High speed switchingUsing advanced field stop trench technology, Fairchilds 1200V Low saturation voltage: VCE(sat) =1.6V @ IC = 20Atrench IGBTs offer superior conduction and switching perfor- High input impedancemances, and easy parallel operation wi

Datasheet: TA49121 , TA49123 , TA49182 , TA9895 , FGA15N120ANTDTU-F109 , FGA15N120FTD , FGA180N33ATD , FGA20N120FTD , MGD623S , FGA25N120ANTD , FGA25N120ANTDTU-F109 , FGA25N120FTD , FGA30N120FTD , FGA30N60LSD , FGA50N100BNT , FGA50N100BNTD , FGA50N100BNTD2 .

History: YGW40N120F2 | YGW60N65T1 | FGA25N120FTD | YGW75N65HP | YGW40N120T2 | 2M410B1 | YGW75N65T1

Keywords - FGA20S120M transistor datasheet

 FGA20S120M cross reference
 FGA20S120M equivalent finder
 FGA20S120M lookup
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