FGA20S120M IGBT. Datasheet pdf. Equivalent
Type Designator: FGA20S120M
Type: IGBT + Anti-Parallel Diode
Type of IGBT Channel: N
Pcⓘ - Maximum Power Dissipation: 348 W
|Vce|ⓘ - Maximum Collector-Emitter Voltage: 1200 V
|Vge|ⓘ - Maximum Gate-Emitter Voltage: 25 V
|Ic|ⓘ - Maximum Collector Current: 40 A @25℃
|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 1.55 V @25℃
|VGEth|ⓘ - Maximum G-E Threshold Voltag: 7.5 V
Tjⓘ - Maximum Junction Temperature: 175 ℃
trⓘ - Rise Time, typ: 176 nS
Coesⓘ - Output Capacitance, typ: 53 pF
Qgⓘ - Total Gate Charge, typ: 208 nC
Package: TO3PN
FGA20S120M Transistor Equivalent Substitute - IGBT Cross-Reference Search
FGA20S120M Datasheet (PDF)
fga20s120m.pdf
April 2010FGA20S120MtmTM1200V, 20A ShortedAnode IGBTFeatures General Description High speed switching Using advanced Field Stop Trench and ShortedAnode technol-ogy, Fairchilds 1200V ShortedAnodeTM Trench IGBTs offer Low saturation voltage: VCE(sat) =1.55V @ IC = 20Asuperior conduction and switching performances, and easy par- High input impedanceallel operation
fga20n120ftd.pdf
December 2007FGA20N120FTDtm1200V, 20A Trench IGBTFeatures Field stop trench technologyGeneral Description High speed switchingUsing advanced field stop trench technology, Fairchilds 1200V Low saturation voltage: VCE(sat) =1.6V @ IC = 20Atrench IGBTs offer superior conduction and switching perfor- High input impedancemances, and easy parallel operation wi
Datasheet: TA49121 , TA49123 , TA49182 , TA9895 , FGA15N120ANTDTU-F109 , FGA15N120FTD , FGA180N33ATD , FGA20N120FTD , FGL60N100BNTD , FGA25N120ANTD , FGA25N120ANTDTU-F109 , FGA25N120FTD , FGA30N120FTD , FGA30N60LSD , FGA50N100BNT , FGA50N100BNTD , FGA50N100BNTD2 .
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