FGA20S120M PDF and Equivalents Search

 

FGA20S120M Specs and Replacement

Type Designator: FGA20S120M

Type: IGBT

Type of IGBT Channel: N

Absolute Maximum Ratings

Pc ⓘ - Maximum Power Dissipation: 348 W

|Vce|ⓘ - Maximum Collector-Emitter Voltage: 1200 V

|Vge|ⓘ - Maximum Gate-Emitter Voltage: 25 V

|Ic| ⓘ - Maximum Collector Current: 40 A @25℃

Tj ⓘ - Maximum Junction Temperature: 175 ℃

Electrical Characteristics

|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 1.55 V @25℃

tr ⓘ - Rise Time, typ: 176 nS

Coesⓘ - Output Capacitance, typ: 53 pF

Package: TO3PN

 FGA20S120M Substitution

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FGA20S120M datasheet

 ..1. Size:780K  fairchild semi
 fga20s120m.pdf pdf_icon

FGA20S120M

April 2010 FGA20S120M tm TM 1200V, 20A ShortedAnode IGBT Features General Description High speed switching Using advanced Field Stop Trench and ShortedAnode technol- ogy, Fairchild s 1200V ShortedAnodeTM Trench IGBTs offer Low saturation voltage VCE(sat) =1.55V @ IC = 20A superior conduction and switching performances, and easy par- High input impedance allel operation... See More ⇒

 9.1. Size:715K  fairchild semi
 fga20n120ftd.pdf pdf_icon

FGA20S120M

December 2007 FGA20N120FTD tm 1200V, 20A Trench IGBT Features Field stop trench technology General Description High speed switching Using advanced field stop trench technology, Fairchild s 1200V Low saturation voltage VCE(sat) =1.6V @ IC = 20A trench IGBTs offer superior conduction and switching perfor- High input impedance mances, and easy parallel operation wi... See More ⇒

Specs: TA49121 , TA49123 , TA49182 , TA9895 , FGA15N120ANTDTU-F109 , FGA15N120FTD , FGA180N33ATD , FGA20N120FTD , NGTB75N65FL2 , FGA25N120ANTD , FGA25N120ANTDTU-F109 , FGA25N120FTD , FGA30N120FTD , FGA30N60LSD , FGA50N100BNT , FGA50N100BNTD , FGA50N100BNTD2 .

Keywords - FGA20S120M transistor spec

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