All IGBT. FGA90N33ATD Datasheet

 

FGA90N33ATD IGBT. Datasheet pdf. Equivalent


   Type Designator: FGA90N33ATD
   Type: IGBT + Anti-Parallel Diode
   Type of IGBT Channel: N
   Pcⓘ - Maximum Power Dissipation: 223 W
   |Vce|ⓘ - Maximum Collector-Emitter Voltage: 330 V
   |Vge|ⓘ - Maximum Gate-Emitter Voltage: 30 V
   |Ic|ⓘ - Maximum Collector Current: 90 A @25℃
   |VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 1.1 V @25℃
   |VGEth|ⓘ - Maximum G-E Threshold Voltag: 5.5 V
   Tjⓘ - Maximum Junction Temperature: 150 ℃
   trⓘ - Rise Time, typ: 40 nS
   Coesⓘ - Output Capacitance, typ: 135 pF
   Qgⓘ - Total Gate Charge, typ: 95 nC
   Package: TO3P

 FGA90N33ATD Transistor Equivalent Substitute - IGBT Cross-Reference Search

 

FGA90N33ATD Datasheet (PDF)

 ..1. Size:748K  fairchild semi
 fga90n33atd.pdf

FGA90N33ATD FGA90N33ATD

April 2008FGA90N33ATDtm330V, 90A PDP Trench IGBTFeatures General Description High current capability Using Novel Trench IGBT Technology, Fairchilds new series of trench IGBTs offer the optimum performance for PDP applica- Low saturation voltage: VCE(sat) =1.1V @ IC = 20Ations where low conduction and switching losses are essential. High input impedance Fast sw

Datasheet: FGA25N120ANTDTU-F109 , FGA25N120FTD , FGA30N120FTD , FGA30N60LSD , FGA50N100BNT , FGA50N100BNTD , FGA50N100BNTD2 , FGA60N60UFD , RJP6065DPM , FGAF40N60UF , FGAF40N60UFD , FGB20N60SF , FGB20N60SFD , FGD3N60LSD , FGD4536 , FGH20N60SFD , FGH20N60UFD .

 

 
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