All IGBT. FGA90N33ATD Datasheet

 

FGA90N33ATD Datasheet and Replacement


   Type Designator: FGA90N33ATD
   Type: IGBT + Anti-Parallel Diode
   Type of IGBT Channel: N
   Pc ⓘ - Maximum Power Dissipation: 223 W
   |Vce|ⓘ - Maximum Collector-Emitter Voltage: 330 V
   |Vge|ⓘ - Maximum Gate-Emitter Voltage: 30 V
   |Ic| ⓘ - Maximum Collector Current: 90 A @25℃
   |VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 1.1 V @25℃
   |VGEth|ⓘ - Maximum G-E Threshold Voltag: 5.5 V
   Tj ⓘ - Maximum Junction Temperature: 150 ℃
   tr ⓘ - Rise Time, typ: 40 nS
   Coesⓘ - Output Capacitance, typ: 135 pF
   Qg ⓘ - Total Gate Charge, typ: 95 nC
   Package: TO3P
 
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FGA90N33ATD Datasheet (PDF)

 ..1. Size:748K  fairchild semi
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FGA90N33ATD

April 2008FGA90N33ATDtm330V, 90A PDP Trench IGBTFeatures General Description High current capability Using Novel Trench IGBT Technology, Fairchilds new series of trench IGBTs offer the optimum performance for PDP applica- Low saturation voltage: VCE(sat) =1.1V @ IC = 20Ations where low conduction and switching losses are essential. High input impedance Fast sw

Datasheet: FGA25N120ANTDTU-F109 , FGA25N120FTD , FGA30N120FTD , FGA30N60LSD , FGA50N100BNT , FGA50N100BNTD , FGA50N100BNTD2 , FGA60N60UFD , FGH30S130P , FGAF40N60UF , FGAF40N60UFD , FGB20N60SF , FGB20N60SFD , FGD3N60LSD , FGD4536 , FGH20N60SFD , FGH20N60UFD .

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