FGA90N33ATD Datasheet and Replacement
Type Designator: FGA90N33ATD
Type: IGBT
Type of IGBT Channel: N
Pc ⓘ - Maximum Power Dissipation: 223 W
|Vce|ⓘ - Maximum Collector-Emitter Voltage: 330 V
|Vge|ⓘ - Maximum Gate-Emitter Voltage: 30 V
|Ic| ⓘ - Maximum Collector Current: 90 A @25℃
|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 1.1 V @25℃
Tj ⓘ - Maximum Junction Temperature: 150 ℃
tr ⓘ - Rise Time, typ: 40 nS
Coesⓘ - Output Capacitance, typ: 135 pF
Package: TO3P
FGA90N33ATD substitution
FGA90N33ATD Datasheet (PDF)
fga90n33atd.pdf

April 2008FGA90N33ATDtm330V, 90A PDP Trench IGBTFeatures General Description High current capability Using Novel Trench IGBT Technology, Fairchilds new series of trench IGBTs offer the optimum performance for PDP applica- Low saturation voltage: VCE(sat) =1.1V @ IC = 20Ations where low conduction and switching losses are essential. High input impedance Fast sw
Datasheet: FGA25N120ANTDTU-F109 , FGA25N120FTD , FGA30N120FTD , FGA30N60LSD , FGA50N100BNT , FGA50N100BNTD , FGA50N100BNTD2 , FGA60N60UFD , FGH30S130P , FGAF40N60UF , FGAF40N60UFD , FGB20N60SF , FGB20N60SFD , FGD3N60LSD , FGD4536 , FGH20N60SFD , FGH20N60UFD .
History: CPV364M4KPBF
Keywords - FGA90N33ATD transistor datasheet
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History: CPV364M4KPBF



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