FGA90N33ATD Datasheet. Specs and Replacement

Type Designator: FGA90N33ATD  📄📄 

Type: IGBT

Type of IGBT Channel: N

Absolute Maximum Ratings

Pc ⓘ - Maximum Power Dissipation: 223 W

|Vce|ⓘ - Maximum Collector-Emitter Voltage: 330 V

|Vge|ⓘ - Maximum Gate-Emitter Voltage: 30 V

|Ic| ⓘ - Maximum Collector Current: 90 A @25℃

Tj ⓘ - Maximum Junction Temperature: 150 ℃

Electrical Characteristics

|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 1.1 V @25℃

tr ⓘ - Rise Time, typ: 40 nS

Coesⓘ - Output Capacitance, typ: 135 pF

Package: TO3P

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FGA90N33ATD datasheet

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FGA90N33ATD

April 2008 FGA90N33ATD tm 330V, 90A PDP Trench IGBT Features General Description High current capability Using Novel Trench IGBT Technology, Fairchild s new series of trench IGBTs offer the optimum performance for PDP applica- Low saturation voltage VCE(sat) =1.1V @ IC = 20A tions where low conduction and switching losses are essential. High input impedance Fast sw... See More ⇒

Specs: FGA25N120ANTDTU-F109, FGA25N120FTD, FGA30N120FTD, FGA30N60LSD, FGA50N100BNT, FGA50N100BNTD, FGA50N100BNTD2, FGA60N60UFD, TGAN60N60F2DS, FGAF40N60UF, FGAF40N60UFD, FGB20N60SF, FGB20N60SFD, FGD3N60LSD, FGD4536, FGH20N60SFD, FGH20N60UFD

Keywords - FGA90N33ATD transistor spec

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