BUK866-400IZ Datasheet and Replacement
Type Designator: BUK866-400IZ
Type: IGBT
Type of IGBT Channel: N
Pc ⓘ - Maximum Power Dissipation: 125 W
|Vce|ⓘ - Maximum Collector-Emitter Voltage: 400 V
|Vge|ⓘ - Maximum Gate-Emitter Voltage: 12 V
|Ic| ⓘ - Maximum Collector Current: 20 A @25℃
|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 1.2 V @25℃
Tj ⓘ - Maximum Junction Temperature: 150 ℃
Coesⓘ - Output Capacitance, typ: 95 pF
Package: SOT404
BUK866-400IZ substitution
BUK866-400IZ Datasheet (PDF)
buk866-400 iz 2.pdf
Philips Semiconductors Product specification Insulated Gate Bipolar Transistor BUK866-400 IZ Protected Logic-Level IGBTGENERAL DESCRIPTION QUICK REFERENCE DATAProtected N-channel logic-level SYMBOL PARAMETER MIN. TYP. MAX. UNITinsulated gate bipolar powertransistor in a plastic envelope V(CL)CER Collector-emitter clamp voltage 370 410 500 Vsuitable for surface mount VCEsat Collec
Datasheet: IGC142T120T6RH , IGC142T120T6RL , IGC142T120T6RM , IGC28T65T8M , IGC28T65QE , BUK854-800A , BUK856-400IZ , BUK856-800A , IRG7IC28U , CM75DY-28H , CT15SM-24 , CT20AS-8 , CT20ASJ-8 , CT20ASL-8 , CT20TM-8 , CT20VM-8 , CT20VML-8 .
History: APT65GP60B2
Keywords - BUK866-400IZ transistor datasheet
BUK866-400IZ cross reference
BUK866-400IZ equivalent finder
BUK866-400IZ lookup
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History: APT65GP60B2
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