All IGBT. BUK866-400IZ Datasheet

 

BUK866-400IZ Datasheet and Replacement


   Type Designator: BUK866-400IZ
   Type: IGBT
   Type of IGBT Channel: N
   Pcⓘ - Maximum Power Dissipation: 125 W
   |Vce|ⓘ - Maximum Collector-Emitter Voltage: 400 V
   |Vge|ⓘ - Maximum Gate-Emitter Voltage: 12 V
   |Ic|ⓘ - Maximum Collector Current: 20 A @25℃
   |VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 1.2 V @25℃
   Tjⓘ - Maximum Junction Temperature: 150 ℃
   Coesⓘ - Output Capacitance, typ: 95 pF
   Package: SOT404
      - IGBT Cross-Reference

 

BUK866-400IZ Datasheet (PDF)

 4.1. Size:70K  philips
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BUK866-400IZ

Philips Semiconductors Product specification Insulated Gate Bipolar Transistor BUK866-400 IZ Protected Logic-Level IGBTGENERAL DESCRIPTION QUICK REFERENCE DATAProtected N-channel logic-level SYMBOL PARAMETER MIN. TYP. MAX. UNITinsulated gate bipolar powertransistor in a plastic envelope V(CL)CER Collector-emitter clamp voltage 370 410 500 Vsuitable for surface mount VCEsat Collec

Datasheet: IGC142T120T6RH , IGC142T120T6RL , IGC142T120T6RM , IGC28T65T8M , IGC28T65QE , BUK854-800A , BUK856-400IZ , BUK856-800A , RJP63F3DPP-M0 , CM75DY-28H , CT15SM-24 , CT20AS-8 , CT20ASJ-8 , CT20ASL-8 , CT20TM-8 , CT20VM-8 , CT20VML-8 .

History: MG25Q6ES51 | 7MBR75U2B060

Keywords - BUK866-400IZ transistor datasheet

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