BUK866-400IZ PDF and Equivalents Search

 

BUK866-400IZ Specs and Replacement

Type Designator: BUK866-400IZ

Type: IGBT

Type of IGBT Channel: N

Absolute Maximum Ratings

Pc ⓘ - Maximum Power Dissipation: 125 W

|Vce|ⓘ - Maximum Collector-Emitter Voltage: 400 V

|Vge|ⓘ - Maximum Gate-Emitter Voltage: 12 V

|Ic| ⓘ - Maximum Collector Current: 20 A @25℃

Tj ⓘ - Maximum Junction Temperature: 150 ℃

Electrical Characteristics

|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 1.2 V @25℃

Coesⓘ - Output Capacitance, typ: 95 pF

Package: SOT404

 BUK866-400IZ Substitution

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BUK866-400IZ datasheet

 4.1. Size:70K  philips
 buk866-400 iz 2.pdf pdf_icon

BUK866-400IZ

Philips Semiconductors Product specification Insulated Gate Bipolar Transistor BUK866-400 IZ Protected Logic-Level IGBT GENERAL DESCRIPTION QUICK REFERENCE DATA Protected N-channel logic-level SYMBOL PARAMETER MIN. TYP. MAX. UNIT insulated gate bipolar power transistor in a plastic envelope V(CL)CER Collector-emitter clamp voltage 370 410 500 V suitable for surface mount VCEsat Collec... See More ⇒

Specs: IGC142T120T6RH, IGC142T120T6RL, IGC142T120T6RM, IGC28T65T8M, IGC28T65QE, BUK854-800A, BUK856-400IZ, BUK856-800A, BT40T60ANF, CM75DY-28H, CT15SM-24, CT20AS-8, CT20ASJ-8, CT20ASL-8, CT20TM-8, CT20VM-8, CT20VML-8

Keywords - BUK866-400IZ transistor spec

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