All IGBT. FID60-06D Datasheet

 

FID60-06D Datasheet and Replacement


   Type Designator: FID60-06D
   Type: IGBT
   Type of IGBT Channel: N
   Pcⓘ - Maximum Power Dissipation: 200 W
   |Vce|ⓘ - Maximum Collector-Emitter Voltage: 600 V
   |Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
   |Ic|ⓘ - Maximum Collector Current: 65 A @25℃
   |VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 1.6 V @25℃
   |VGEth|ⓘ - Maximum G-E Threshold Voltag: 6.5 V
   Tjⓘ - Maximum Junction Temperature: 150 ℃
   trⓘ - Rise Time, typ: 60 nS
   Qgⓘ - Total Gate Charge, typ: 120 nC
   Package: I4-PAC-5LEAD
      - IGBT Cross-Reference

 

FID60-06D Datasheet (PDF)

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FID60-06D

FID 60-06DIC25 = 65 AIGBT Boost ChopperVCES = 600 Vin ISOPLUS i4-PACVCE(sat) typ. = 1.6 V341E728732FeaturesIGBT NPT IGBT technologySymbol Conditions Maximum Ratings - low saturation voltage with positive VCES TVJ = 25C to 150C 600 V temperature coefficient VGES 20 V - fast switching - wide safe operating areaIC25 TC = 25C 65 A HiPerFR

Datasheet: NGB8207AN , NGB8207N , NGD15N41CL , NGD18N40CLB , NGD8201A , NGD8201N , NGD8205N , NGP15N41CL , CRG60T60AN3H , FII24N17AH1 , FII30-06D , FII30-12E , FII40-06D , FII50-12E , IXA12IF1200HB , IXA12IF1200PB , IXA12IF1200TC .

History: SGH30N60RUF | CIF25P120P

Keywords - FID60-06D transistor datasheet

 FID60-06D cross reference
 FID60-06D equivalent finder
 FID60-06D lookup
 FID60-06D substitution
 FID60-06D replacement

 

 
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