All IGBT. FID60-06D Equivalents Search

 

FID60-06D Spec and Replacement


   Type Designator: FID60-06D
   Type: IGBT
   Type of IGBT Channel: N
   Pc ⓘ - Maximum Power Dissipation: 200 W
   |Vce|ⓘ - Maximum Collector-Emitter Voltage: 600 V
   |Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
   |Ic| ⓘ - Maximum Collector Current: 65 A @25℃
   |VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 1.6 V @25℃
   Tj ⓘ - Maximum Junction Temperature: 150 ℃
   tr ⓘ - Rise Time, typ: 60 nS
   Package: I4-PAC-5LEAD

 FID60-06D Transistor Equivalent Substitute - IGBT Cross-Reference Search

 

FID60-06D specs

 ..1. Size:416K  1
 fid60-06d.pdf pdf_icon

FID60-06D

FID 60-06D IC25 = 65 A IGBT Boost Chopper VCES = 600 V in ISOPLUS i4-PAC VCE(sat) typ. = 1.6 V 3 4 1 E72873 2 Features IGBT NPT IGBT technology Symbol Conditions Maximum Ratings - low saturation voltage with positive VCES TVJ = 25 C to 150 C 600 V temperature coefficient VGES 20 V - fast switching - wide safe operating area IC25 TC = 25 C 65 A HiPerFR... See More ⇒

Specs: NGB8207AN , NGB8207N , NGD15N41CL , NGD18N40CLB , NGD8201A , NGD8201N , NGD8205N , NGP15N41CL , SGT40N60FD2PN , FII24N17AH1 , FII30-06D , FII30-12E , FII40-06D , FII50-12E , IXA12IF1200HB , IXA12IF1200PB , IXA12IF1200TC .

Keywords - FID60-06D transistor spec

 FID60-06D cross reference
 FID60-06D equivalent finder
 FID60-06D lookup
 FID60-06D substitution
 FID60-06D replacement

 

 
Back to Top

 


 
.