All IGBT. FII24N17AH1 Datasheet

 

FII24N17AH1 Datasheet and Replacement


   Type Designator: FII24N17AH1
   Type: IGBT
   Type of IGBT Channel: N
   Pcⓘ - Maximum Power Dissipation: 140 W
   |Vce|ⓘ - Maximum Collector-Emitter Voltage: 1700 V
   |Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
   |Ic|ⓘ - Maximum Collector Current: 18 A @25℃
   |VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 4.5 V @25℃
   Tjⓘ - Maximum Junction Temperature: 150 ℃
   trⓘ - Rise Time, typ: 60 nS
   Package: I4-PAC-5LEAD
      - IGBT Cross-Reference

 

FII24N17AH1 Datasheet (PDF)

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FII24N17AH1

Advance Technical DataFII24N17AH1FII24N17AH1 IC25 = 18 AHigh Voltage IGBTVCES = 1700 VPhase-LegVCE(sat) = 6.0 V3ISOPLUS i4-PACTM Package541125 IGBTFeaturesSymbol Conditions Maximum Ratings NPT3 IGBTVCES TVJ = 25C to 150C 1700 V- low saturation voltage- positive temperature coefficient forVGES Continuous 20 V easy paralleling 30 V - fa

Datasheet: NGB8207N , NGD15N41CL , NGD18N40CLB , NGD8201A , NGD8201N , NGD8205N , NGP15N41CL , FID60-06D , MBQ50T65FDSC , FII30-06D , FII30-12E , FII40-06D , FII50-12E , IXA12IF1200HB , IXA12IF1200PB , IXA12IF1200TC , IXA17IF1200HJ .

History: SGT10T60SD1S | FII30-12E | NGD8205N | FGA180N33ATD | FII50-12E | 1MBI1600U4C-120 | SRE40N065FSUR

Keywords - FII24N17AH1 transistor datasheet

 FII24N17AH1 cross reference
 FII24N17AH1 equivalent finder
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