FII24N17AH1 Datasheet and Replacement
Type Designator: FII24N17AH1
Type: IGBT + Anti-Parallel Diode
Type of IGBT Channel: N
Pc ⓘ - Maximum Power Dissipation: 140 W
|Vce|ⓘ - Maximum Collector-Emitter Voltage: 1700 V
|Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
|Ic| ⓘ - Maximum Collector Current: 18 A @25℃
|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 4.5 V @25℃
|VGEth|ⓘ - Maximum G-E Threshold Voltag: 5 V
Tj ⓘ - Maximum Junction Temperature: 150 ℃
tr ⓘ - Rise Time, typ: 60 nS
Qg ⓘ - Total Gate Charge, typ: 105 nC
Package: I4-PAC-5LEAD
FII24N17AH1 substitution
FII24N17AH1 Datasheet (PDF)
fii24n17ah1.pdf
Advance Technical DataFII24N17AH1FII24N17AH1 IC25 = 18 AHigh Voltage IGBTVCES = 1700 VPhase-LegVCE(sat) = 6.0 V3ISOPLUS i4-PACTM Package541125 IGBTFeaturesSymbol Conditions Maximum Ratings NPT3 IGBTVCES TVJ = 25C to 150C 1700 V- low saturation voltage- positive temperature coefficient forVGES Continuous 20 V easy paralleling 30 V - fa
Datasheet: NGB8207N , NGD15N41CL , NGD18N40CLB , NGD8201A , NGD8201N , NGD8205N , NGP15N41CL , FID60-06D , GT45F122 , FII30-06D , FII30-12E , FII40-06D , FII50-12E , IXA12IF1200HB , IXA12IF1200PB , IXA12IF1200TC , IXA17IF1200HJ .
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