FII24N17AH1 PDF and Equivalents Search

 

FII24N17AH1 PDF Specs and Replacement


   Type Designator: FII24N17AH1
   Type: IGBT
   Type of IGBT Channel: N

Absolute Maximum Ratings


   Pc ⓘ - Maximum Power Dissipation: 140 W
   |Vce|ⓘ - Maximum Collector-Emitter Voltage: 1700 V
   |Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
   |Ic| ⓘ - Maximum Collector Current: 18 A @25℃
   Tj ⓘ - Maximum Junction Temperature: 150 ℃

Electrical Characteristics


   |VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 4.5 V @25℃
   tr ⓘ - Rise Time, typ: 60 nS
   Package: I4-PAC-5LEAD
 

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FII24N17AH1 PDF specs

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FII24N17AH1

Advance Technical Data FII24N17AH1 FII24N17AH1 IC25 = 18 A High Voltage IGBT VCES = 1700 V Phase-Leg VCE(sat) = 6.0 V 3 ISOPLUS i4-PACTM Package 5 4 1 1 2 5 IGBT Features Symbol Conditions Maximum Ratings NPT3 IGBT VCES TVJ = 25 C to 150 C 1700 V - low saturation voltage - positive temperature coefficient for VGES Continuous 20 V easy paralleling 30 V - fa... See More ⇒

Specs: NGB8207N , NGD15N41CL , NGD18N40CLB , NGD8201A , NGD8201N , NGD8205N , NGP15N41CL , FID60-06D , RJH3047 , FII30-06D , FII30-12E , FII40-06D , FII50-12E , IXA12IF1200HB , IXA12IF1200PB , IXA12IF1200TC , IXA17IF1200HJ .

Keywords - FII24N17AH1 transistor spec

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