FII30-06D Specs and Replacement
Type Designator: FII30-06D
Type: IGBT
Type of IGBT Channel: N
Absolute Maximum Ratings
Pc ⓘ - Maximum Power Dissipation: 100 W
|Vce|ⓘ - Maximum Collector-Emitter Voltage: 600 V
|Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
|Ic| ⓘ - Maximum Collector Current: 30 A @25℃
Tj ⓘ - Maximum Junction Temperature: 150 ℃
Electrical Characteristics
|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 1.9 V @25℃
Package: I4-PAC-5LEAD FII30-06D Substitution - IGBT ⓘ Cross-Reference Search
FII30-06D datasheet
fii30-06d.pdf
FII 30-06D IC25 = 30 A IGBT phaseleg VCES = 600 V in ISOPLUS i4-PAC VCE(sat) typ. = 1.9 V 3 5 4 1 E72873 2 Features IGBT NPT IGBT technology Symbol Conditions Maximum Ratings - low saturation voltage VCES TVJ = 25 C to 150 C 600 V - positive temperature coefficient for easy paralleling VGES 20 V - fast switching IC25 TC = 25 C 30 A HiPerFRED diode ... See More ⇒
fii30-12e.pdf
FII 30-12E IC25 = 33 A NPT3 IGBT VCES = 1200 V Phaseleg Topology VCE(sat) typ = 2.4 V in ISOPLUS i4-PACTM 3 5 4 1 1 5 2 Features IGBTs NPT3 IGBT Symbol Conditions Maximum Ratings - positive temperature coefficient of saturation voltage for easy paralleling VCES TVJ = 25 C to 150 C 1200 V - fast switching - short tail current for optimized VGES 20 V performance ... See More ⇒
Specs: NGD15N41CL , NGD18N40CLB , NGD8201A , NGD8201N , NGD8205N , NGP15N41CL , FID60-06D , FII24N17AH1 , IHW20N135R5 , FII30-12E , FII40-06D , FII50-12E , IXA12IF1200HB , IXA12IF1200PB , IXA12IF1200TC , IXA17IF1200HJ , IXA20I1200PB .
Keywords - FII30-06D transistor spec
FII30-06D cross reference
FII30-06D equivalent finder
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