FII30-12E Spec and Replacement, IGBT Equivalent Finder, Cross Reference

FII30-12E Specs and Replacement

Type Designator: FII30-12E

Type: IGBT

Type of IGBT Channel: N

Absolute Maximum Ratings

Pc ⓘ - Maximum Power Dissipation: 150 W

|Vce|ⓘ - Maximum Collector-Emitter Voltage: 1200 V

|Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V

|Ic| ⓘ - Maximum Collector Current: 33 A @25℃

Tj ⓘ - Maximum Junction Temperature: 150 ℃

Electrical Characteristics

|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 2.4 V @25℃

tr ⓘ - Rise Time, typ: 105 nS

Package: I4-PAC-5LEAD

FII30-12E Substitution

- IGBT ⓘ Cross-Reference Search

FII30-12E datasheet

..1. Size:157K 1
fii30-12e.pdf pdf_icon

FII 30-12E IC25 = 33 A NPT3 IGBT VCES = 1200 V Phaseleg Topology VCE(sat) typ = 2.4 V in ISOPLUS i4-PACTM 3 5 4 1 1 5 2 Features IGBTs NPT3 IGBT Symbol Conditions Maximum Ratings - positive temperature coefficient of saturation voltage for easy paralleling VCES TVJ = 25 C to 150 C 1200 V - fast switching - short tail current for optimized VGES 20 V performance ... See More ⇒

8.1. Size:354K 1
fii30-06d.pdf pdf_icon

FII 30-06D IC25 = 30 A IGBT phaseleg VCES = 600 V in ISOPLUS i4-PAC VCE(sat) typ. = 1.9 V 3 5 4 1 E72873 2 Features IGBT NPT IGBT technology Symbol Conditions Maximum Ratings - low saturation voltage VCES TVJ = 25 C to 150 C 600 V - positive temperature coefficient for easy paralleling VGES 20 V - fast switching IC25 TC = 25 C 30 A HiPerFRED diode ... See More ⇒

Specs: NGD18N40CLB , NGD8201A , NGD8201N , NGD8205N , NGP15N41CL , FID60-06D , FII24N17AH1 , FII30-06D , RJH30E2DPP , FII40-06D , FII50-12E , IXA12IF1200HB , IXA12IF1200PB , IXA12IF1200TC , IXA17IF1200HJ , IXA20I1200PB , IXA20IF1200HB .