All IGBT. FII30-12E Datasheet

 

FII30-12E IGBT. Datasheet pdf. Equivalent


   Type Designator: FII30-12E
   Type: IGBT + Anti-Parallel Diode
   Type of IGBT Channel: N
   Pcⓘ - Maximum Power Dissipation: 150 W
   |Vce|ⓘ - Maximum Collector-Emitter Voltage: 1200 V
   |Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
   |Ic|ⓘ - Maximum Collector Current: 33 A @25℃
   |VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 2.4 V @25℃
   |VGEth|ⓘ - Maximum G-E Threshold Voltag: 6.5 V
   Tjⓘ - Maximum Junction Temperature: 150 ℃
   trⓘ - Rise Time, typ: 105 nS
   Qgⓘ - Total Gate Charge, typ: 100 nC
   Package: I4-PAC-5LEAD

 FII30-12E Transistor Equivalent Substitute - IGBT Cross-Reference Search

 

FII30-12E Datasheet (PDF)

 ..1. Size:157K  1
 fii30-12e.pdf

FII30-12E FII30-12E

FII 30-12EIC25 = 33 ANPT3 IGBTVCES = 1200 VPhaseleg TopologyVCE(sat) typ = 2.4 Vin ISOPLUS i4-PACTM3541152Features IGBTs NPT3 IGBTSymbol Conditions Maximum Ratings - positive temperature coefficient ofsaturation voltage for easy parallelingVCES TVJ = 25C to 150C 1200 V- fast switching- short tail current for optimizedVGES 20 Vperformance

 8.1. Size:354K  1
 fii30-06d.pdf

FII30-12E FII30-12E

FII 30-06DIC25 = 30 AIGBT phaselegVCES = 600 Vin ISOPLUS i4-PACVCE(sat) typ. = 1.9 V3541E728732FeaturesIGBT NPT IGBT technologySymbol Conditions Maximum Ratings - low saturation voltageVCES TVJ = 25C to 150C 600 V - positive temperature coefficient for easy parallelingVGES 20 V - fast switchingIC25 TC = 25C 30 A HiPerFRED diode

Datasheet: NGD18N40CLB , NGD8201A , NGD8201N , NGD8205N , NGP15N41CL , FID60-06D , FII24N17AH1 , FII30-06D , TGAN60N60F2DS , FII40-06D , FII50-12E , IXA12IF1200HB , IXA12IF1200PB , IXA12IF1200TC , IXA17IF1200HJ , IXA20I1200PB , IXA20IF1200HB .

 

 
Back to Top