All IGBT. FII40-06D Datasheet

 

FII40-06D IGBT. Datasheet pdf. Equivalent


   Type Designator: FII40-06D
   Type: IGBT + Anti-Parallel Diode
   Type of IGBT Channel: N
   Pcⓘ - Maximum Power Dissipation: 125 W
   |Vce|ⓘ - Maximum Collector-Emitter Voltage: 600 V
   |Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
   |Ic|ⓘ - Maximum Collector Current: 40 A @25℃
   |VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 1.8 V @25℃
   |VGEth|ⓘ - Maximum G-E Threshold Voltag: 6.5 V
   Tjⓘ - Maximum Junction Temperature: 150 ℃
   trⓘ - Rise Time, typ: 50 nS
   Qgⓘ - Total Gate Charge, typ: 95 nC
   Package: I4-PAC-5LEAD

 FII40-06D Transistor Equivalent Substitute - IGBT Cross-Reference Search

 

FII40-06D Datasheet (PDF)

 ..1. Size:264K  1
 fii40-06d.pdf

FII40-06D FII40-06D

FII 40-06DIC25 = 40 AIGBT phaselegVCES = 600 Vin ISOPLUS i4-PACVCE(sat) typ. = 1.8 V3541E728732FeaturesIGBT NPT IGBT technologySymbol Conditions Maximum Ratings - low saturation voltageVCES TVJ = 25C to 150C 600 V - positive temperature coefficient for easy parallelingVGES 20 V - fast switchingIC25 TC = 25C 40 A HiPerFRED diode

Datasheet: NGD8201A , NGD8201N , NGD8205N , NGP15N41CL , FID60-06D , FII24N17AH1 , FII30-06D , FII30-12E , SGT40N60FD2PN , FII50-12E , IXA12IF1200HB , IXA12IF1200PB , IXA12IF1200TC , IXA17IF1200HJ , IXA20I1200PB , IXA20IF1200HB , IXA20PG1200DHGLB .

 

 
Back to Top