All IGBT. FII40-06D Datasheet

 

FII40-06D Datasheet and Replacement


   Type Designator: FII40-06D
   Type: IGBT + Anti-Parallel Diode
   Type of IGBT Channel: N
   Pc ⓘ - Maximum Power Dissipation: 125 W
   |Vce|ⓘ - Maximum Collector-Emitter Voltage: 600 V
   |Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
   |Ic| ⓘ - Maximum Collector Current: 40 A @25℃
   |VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 1.8 V @25℃
   |VGEth|ⓘ - Maximum G-E Threshold Voltag: 6.5 V
   Tj ⓘ - Maximum Junction Temperature: 150 ℃
   tr ⓘ - Rise Time, typ: 50 nS
   Qg ⓘ - Total Gate Charge, typ: 95 nC
   Package: I4-PAC-5LEAD
 

 FII40-06D substitution

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FII40-06D Datasheet (PDF)

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FII40-06D

FII 40-06DIC25 = 40 AIGBT phaselegVCES = 600 Vin ISOPLUS i4-PACVCE(sat) typ. = 1.8 V3541E728732FeaturesIGBT NPT IGBT technologySymbol Conditions Maximum Ratings - low saturation voltageVCES TVJ = 25C to 150C 600 V - positive temperature coefficient for easy parallelingVGES 20 V - fast switchingIC25 TC = 25C 40 A HiPerFRED diode

Datasheet: NGD8201A , NGD8201N , NGD8205N , NGP15N41CL , FID60-06D , FII24N17AH1 , FII30-06D , FII30-12E , MBQ50T65FDSC , FII50-12E , IXA12IF1200HB , IXA12IF1200PB , IXA12IF1200TC , IXA17IF1200HJ , IXA20I1200PB , IXA20IF1200HB , IXA20PG1200DHGLB .

Keywords - FII40-06D transistor datasheet

 FII40-06D cross reference
 FII40-06D equivalent finder
 FII40-06D lookup
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 FII40-06D replacement

 

 
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