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FII40-06D Spec and Replacement


   Type Designator: FII40-06D
   Type: IGBT
   Type of IGBT Channel: N
   Pc ⓘ - Maximum Power Dissipation: 125 W
   |Vce|ⓘ - Maximum Collector-Emitter Voltage: 600 V
   |Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
   |Ic| ⓘ - Maximum Collector Current: 40 A @25℃
   |VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 1.8 V @25℃
   Tj ⓘ - Maximum Junction Temperature: 150 ℃
   tr ⓘ - Rise Time, typ: 50 nS
   Package: I4-PAC-5LEAD

 FII40-06D Transistor Equivalent Substitute - IGBT Cross-Reference Search

 

FII40-06D specs

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FII40-06D

FII 40-06D IC25 = 40 A IGBT phaseleg VCES = 600 V in ISOPLUS i4-PAC VCE(sat) typ. = 1.8 V 3 5 4 1 E72873 2 Features IGBT NPT IGBT technology Symbol Conditions Maximum Ratings - low saturation voltage VCES TVJ = 25 C to 150 C 600 V - positive temperature coefficient for easy paralleling VGES 20 V - fast switching IC25 TC = 25 C 40 A HiPerFRED diode ... See More ⇒

Specs: NGD8201A , NGD8201N , NGD8205N , NGP15N41CL , FID60-06D , FII24N17AH1 , FII30-06D , FII30-12E , IKW50N60T , FII50-12E , IXA12IF1200HB , IXA12IF1200PB , IXA12IF1200TC , IXA17IF1200HJ , IXA20I1200PB , IXA20IF1200HB , IXA20PG1200DHGLB .

Keywords - FII40-06D transistor spec

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