FII50-12E Datasheet. Specs and Replacement

Type Designator: FII50-12E  📄📄 

Type: IGBT

Type of IGBT Channel: N

Absolute Maximum Ratings

Pc ⓘ - Maximum Power Dissipation: 200 W

|Vce|ⓘ - Maximum Collector-Emitter Voltage: 1200 V

|Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V

|Ic| ⓘ - Maximum Collector Current: 50 A @25℃

Tj ⓘ - Maximum Junction Temperature: 150 ℃

Electrical Characteristics

|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 2 V @25℃

tr ⓘ - Rise Time, typ: 50 nS

Package: I4-PAC-5LEAD

  📄📄 Copy 

 FII50-12E Substitution

- IGBTⓘ Cross-Reference Search

 

FII50-12E datasheet

 ..1. Size:190K  1
 fii50-12e.pdf pdf_icon

FII50-12E

FII 50-12E IC25 = 50 A NPT3 IGBT phaseleg VCES = 1200 V in ISOPLUS i4-PACTM VCE(sat) typ.= 2.0 V 3 5 4 1 1 5 2 Features IGBTs NPT3 IGBT Symbol Conditions Maximum Ratings - low saturation voltage - positive temperature coefficient for VCES TVJ = 25 C to 150 C 1200 V easy paralleling - fast switching VGES 20 V - short tail current for optimized IC25 TC = 25 C 5... See More ⇒

Specs: NGD8201N, NGD8205N, NGP15N41CL, FID60-06D, FII24N17AH1, FII30-06D, FII30-12E, FII40-06D, IHW20N135R5, IXA12IF1200HB, IXA12IF1200PB, IXA12IF1200TC, IXA17IF1200HJ, IXA20I1200PB, IXA20IF1200HB, IXA20PG1200DHGLB, IXA27IF1200HJ

Keywords - FII50-12E transistor spec

 FII50-12E cross reference
 FII50-12E equivalent finder
 FII50-12E lookup
 FII50-12E substitution
 FII50-12E replacement