FII50-12E Spec and Replacement
Type Designator: FII50-12E
Type: IGBT + Anti-Parallel Diode
Type of IGBT Channel: N
Pc ⓘ - Maximum Power Dissipation: 200 W
|Vce|ⓘ - Maximum Collector-Emitter Voltage: 1200 V
|Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
|Ic| ⓘ - Maximum Collector Current: 50 A @25℃
|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 2 V @25℃
|VGEth|ⓘ - Maximum G-E Threshold Voltag: 6.5 V
Tj ⓘ - Maximum Junction Temperature: 150 ℃
tr ⓘ - Rise Time, typ: 50 nS
Qg ⓘ - Total Gate Charge, typ: 150 nC
Package: I4-PAC-5LEAD
FII50-12E Transistor Equivalent Substitute - IGBT Cross-Reference Search
FII50-12E specs
fii50-12e.pdf
FII 50-12E IC25 = 50 A NPT3 IGBT phaseleg VCES = 1200 V in ISOPLUS i4-PACTM VCE(sat) typ.= 2.0 V 3 5 4 1 1 5 2 Features IGBTs NPT3 IGBT Symbol Conditions Maximum Ratings - low saturation voltage - positive temperature coefficient for VCES TVJ = 25 C to 150 C 1200 V easy paralleling - fast switching VGES 20 V - short tail current for optimized IC25 TC = 25 C 5... See More ⇒
Specs: NGD8201N , NGD8205N , NGP15N41CL , FID60-06D , FII24N17AH1 , FII30-06D , FII30-12E , FII40-06D , YGW60N65F1A1 , IXA12IF1200HB , IXA12IF1200PB , IXA12IF1200TC , IXA17IF1200HJ , IXA20I1200PB , IXA20IF1200HB , IXA20PG1200DHGLB , IXA27IF1200HJ .
Keywords - FII50-12E transistor spec
FII50-12E cross reference
FII50-12E equivalent finder
FII50-12E lookup
FII50-12E substitution
FII50-12E replacement
LIST
Last Update
IGBT: JJT40N120SE | JJT40N120HE | JJT30N65UE
Popular searches
tip107 | 2n5457 | k3568 | 2sc1344 | cs840f | 2n3053 equivalent | 2n3569 | 2sd667