All IGBT. FII50-12E Datasheet

 

FII50-12E IGBT. Datasheet pdf. Equivalent


   Type Designator: FII50-12E
   Type: IGBT + Anti-Parallel Diode
   Type of IGBT Channel: N
   Pcⓘ - Maximum Power Dissipation: 200 W
   |Vce|ⓘ - Maximum Collector-Emitter Voltage: 1200 V
   |Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
   |Ic|ⓘ - Maximum Collector Current: 50 A @25℃
   |VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 2 V @25℃
   |VGEth|ⓘ - Maximum G-E Threshold Voltag: 6.5 V
   Tjⓘ - Maximum Junction Temperature: 150 ℃
   trⓘ - Rise Time, typ: 50 nS
   Qgⓘ - Total Gate Charge, typ: 150 nC
   Package: I4-PAC-5LEAD

 FII50-12E Transistor Equivalent Substitute - IGBT Cross-Reference Search

 

FII50-12E Datasheet (PDF)

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 fii50-12e.pdf

FII50-12E FII50-12E

FII 50-12EIC25 = 50 ANPT3 IGBT phaselegVCES = 1200 Vin ISOPLUS i4-PACTMVCE(sat) typ.= 2.0 V3541152Features IGBTs NPT3 IGBTSymbol Conditions Maximum Ratings - low saturation voltage- positive temperature coefficient forVCES TVJ = 25C to 150C 1200 V easy paralleling- fast switchingVGES 20 V- short tail current for optimizedIC25 TC = 25C 5

Datasheet: NGD8201N , NGD8205N , NGP15N41CL , FID60-06D , FII24N17AH1 , FII30-06D , FII30-12E , FII40-06D , IKW30N60H3 , IXA12IF1200HB , IXA12IF1200PB , IXA12IF1200TC , IXA17IF1200HJ , IXA20I1200PB , IXA20IF1200HB , IXA20PG1200DHGLB , IXA27IF1200HJ .

 

 
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