All IGBT. IXA27IF1200HJ Datasheet

 

IXA27IF1200HJ Datasheet and Replacement


   Type Designator: IXA27IF1200HJ
   Type: IGBT + Anti-Parallel Diode
   Type of IGBT Channel: N
   Pcⓘ - Maximum Power Dissipation: 150 W
   |Vce|ⓘ - Maximum Collector-Emitter Voltage: 1200 V
   |Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
   |Ic|ⓘ - Maximum Collector Current: 43 A @25℃
   |VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 1.8 V @25℃
   |VGEth|ⓘ - Maximum G-E Threshold Voltag: 6.5 V
   Tjⓘ - Maximum Junction Temperature: 150 ℃
   trⓘ - Rise Time, typ: 40 nS
   Qgⓘ - Total Gate Charge, typ: 76 nC
   Package: ISOPLUS247
      - IGBT Cross-Reference

 

IXA27IF1200HJ Datasheet (PDF)

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IXA27IF1200HJ

IXA27IF1200HJVCES = 1200VXPT IGBTI= 43 AC25VCE(sat) = 1.8VCopackPart numberIXA27IF1200HJBackside: isolated2(C)(G) 13(E)Features / Advantages: Applications: Package: ISOPLUS247 Easy paralleling due to the positive temperature AC motor drives Isolation Voltage: V~3600 coefficient of the on-state voltage Solar inverter Industry standard outline

Datasheet: FII50-12E , IXA12IF1200HB , IXA12IF1200PB , IXA12IF1200TC , IXA17IF1200HJ , IXA20I1200PB , IXA20IF1200HB , IXA20PG1200DHGLB , SGH80N60UFD , IXA30PG1200DHGLB , IXA33IF1200HB , IXA37IF1200HJ , IXA40PG1200DHGLB , IXA45IF1200HB , IXA55I1200HJ , IXA60IF1200NA , IXBF12N300 .

History: IXSN55N120AU1

Keywords - IXA27IF1200HJ transistor datasheet

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