IXA55I1200HJ Specs and Replacement

Type Designator: IXA55I1200HJ

Type: IGBT

Type of IGBT Channel: N

Absolute Maximum Ratings

Pc ⓘ - Maximum Power Dissipation: 290 W

|Vce|ⓘ - Maximum Collector-Emitter Voltage: 1200 V

|Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V

|Ic| ⓘ - Maximum Collector Current: 84 A @25℃

Tj ⓘ - Maximum Junction Temperature: 150 ℃

Electrical Characteristics

|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 1.8 V @25℃

tr ⓘ - Rise Time, typ: 40 nS

Package: ISOPLUS247

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IXA55I1200HJ datasheet

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IXA55I1200HJ

IXA55I1200HJ preliminary VCES = 1200V XPT IGBT I= 84 A C25 VCE(sat) = 1.8V Single IGBT Part number IXA55I1200HJ Backside isolated (C) 2 (G) 1 (E) 3 Features / Advantages Applications Package ISOPLUS247 Easy paralleling due to the positive temperature AC motor drives Isolation Voltage V 3600 coefficient of the on-state voltage Solar inverter Industry s... See More ⇒

Specs: IXA20IF1200HB, IXA20PG1200DHGLB, IXA27IF1200HJ, IXA30PG1200DHGLB, IXA33IF1200HB, IXA37IF1200HJ, IXA40PG1200DHGLB, IXA45IF1200HB, SGT60U65FD1PT, IXA60IF1200NA, IXBF12N300, IXBF20N300, IXBF32N300, IXBF40N160, IXBF42N300, IXBF55N300, IXBF9N160G

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