All IGBT. IXA55I1200HJ Datasheet

 

IXA55I1200HJ Datasheet and Replacement


   Type Designator: IXA55I1200HJ
   Type: IGBT
   Type of IGBT Channel: N
   Pc ⓘ - Maximum Power Dissipation: 290 W
   |Vce|ⓘ - Maximum Collector-Emitter Voltage: 1200 V
   |Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
   |Ic| ⓘ - Maximum Collector Current: 84 A @25℃
   |VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 1.8 V @25℃
   |VGEth|ⓘ - Maximum G-E Threshold Voltag: 6.5 V
   Tj ⓘ - Maximum Junction Temperature: 150 ℃
   tr ⓘ - Rise Time, typ: 40 nS
   Qg ⓘ - Total Gate Charge, typ: 190 nC
   Package: ISOPLUS247
 
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IXA55I1200HJ Datasheet (PDF)

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IXA55I1200HJ

IXA55I1200HJpreliminaryVCES = 1200VXPT IGBTI= 84 AC25VCE(sat) = 1.8VSingle IGBTPart numberIXA55I1200HJBackside: isolated(C) 2(G) 1(E) 3Features / Advantages: Applications: Package: ISOPLUS247 Easy paralleling due to the positive temperature AC motor drives Isolation Voltage: V~3600 coefficient of the on-state voltage Solar inverter Industry s

Datasheet: IXA20IF1200HB , IXA20PG1200DHGLB , IXA27IF1200HJ , IXA30PG1200DHGLB , IXA33IF1200HB , IXA37IF1200HJ , IXA40PG1200DHGLB , IXA45IF1200HB , IKW50N60H3 , IXA60IF1200NA , IXBF12N300 , IXBF20N300 , IXBF32N300 , IXBF40N160 , IXBF42N300 , IXBF55N300 , IXBF9N160G .

History: 2MBI75J-120

Keywords - IXA55I1200HJ transistor datasheet

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