CT20TM-8 IGBT. Datasheet pdf. Equivalent
Type Designator: CT20TM-8
Type: IGBT
Type of IGBT Channel: N
|Vce|ⓘ - Maximum Collector-Emitter Voltage: 400 V
|Vge|ⓘ - Maximum Gate-Emitter Voltage: 30 V
|Ic|ⓘ - Maximum Collector Current: 130(pulse) A @25℃
|VGEth|ⓘ - Maximum G-E Threshold Voltag: 7 V
Tjⓘ - Maximum Junction Temperature: 150 ℃
Package: TO220F
CT20TM-8 Transistor Equivalent Substitute - IGBT Cross-Reference Search
CT20TM-8 Datasheet (PDF)
ct20tm-8.pdf
MITSUBISHI INSULATED GATE BIPOLAR TRANSISTORCT20TM-8STROBE FLASHER USECT20TM-8 OUTLINE DRAWING Dimensions in mm10.5MAX.2.85.2 3.21.3MAX.0.82.54 2.54 0.5 2.6qwewq GATEq w COLLECTORe EMITTERVCES ............................................................................... 400VeICM .........................................................................
Datasheet: BUK856-400IZ , BUK856-800A , BUK866-400IZ , CM75DY-28H , CT15SM-24 , CT20AS-8 , CT20ASJ-8 , CT20ASL-8 , FGH60N60SFD , CT20VM-8 , CT20VML-8 , CT20VS-8 , CT20VSL-8 , CT25AS-8 , CT25ASJ-8 , CT30SM-12 , CT30TM-8 .
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IGBT: AOTS40B65H1 | AOTF8B65MQ1 | AOTF5B65M2 | AOTF5B65M1 | AOTF20B65M2 | AOTF20B65M1 | AOTF20B65LN2 | AOTF15B65MQ1 | AOTF15B65M3 | AOTF15B65M2 | AOTF15B60D2