CT20TM-8 Datasheet. Specs and Replacement

Type Designator: CT20TM-8  📄📄 

Type: IGBT

Type of IGBT Channel: N

Absolute Maximum Ratings

|Vce|ⓘ - Maximum Collector-Emitter Voltage: 400 V

|Vge|ⓘ - Maximum Gate-Emitter Voltage: 30 V

|Ic| ⓘ - Maximum Collector Current: 130(pulse) A @25℃

Tj ⓘ - Maximum Junction Temperature: 150 ℃

Electrical Characteristics

Package: TO220F

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CT20TM-8 datasheet

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CT20TM-8

MITSUBISHI INSULATED GATE BIPOLAR TRANSISTOR CT20TM-8 STROBE FLASHER USE CT20TM-8 OUTLINE DRAWING Dimensions in mm 10.5MAX. 2.8 5.2 3.2 1.3MAX. 0.8 2.54 2.54 0.5 2.6 qwe w q GATE q w COLLECTOR e EMITTER VCES ............................................................................... 400V e ICM ............................................................................ See More ⇒

Specs: BUK856-400IZ, BUK856-800A, BUK866-400IZ, CM75DY-28H, CT15SM-24, CT20AS-8, CT20ASJ-8, CT20ASL-8, JT075N065WED, CT20VM-8, CT20VML-8, CT20VS-8, CT20VSL-8, CT25AS-8, CT25ASJ-8, CT30SM-12, CT30TM-8

Keywords - CT20TM-8 transistor spec

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