All IGBT. IXBF42N300 Datasheet

 

IXBF42N300 Datasheet and Replacement


   Type Designator: IXBF42N300
   Type: IGBT + Anti-Parallel Diode
   Type of IGBT Channel: N
   Pc ⓘ - Maximum Power Dissipation: 240 W
   |Vce|ⓘ - Maximum Collector-Emitter Voltage: 3000 V
   |Vge|ⓘ - Maximum Gate-Emitter Voltage: 25 V
   |Ic| ⓘ - Maximum Collector Current: 60 A @25℃
   |VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 2.5 V @25℃
   |VGEth|ⓘ - Maximum G-E Threshold Voltag: 5 V
   Tj ⓘ - Maximum Junction Temperature: 150 ℃
   tr ⓘ - Rise Time, typ: 330 nS
   Coesⓘ - Output Capacitance, typ: 170 pF
   Qg ⓘ - Total Gate Charge, typ: 200 nC
   Package: ISOPLUS-I4-PAK
 

 IXBF42N300 substitution

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IXBF42N300 Datasheet (PDF)

 ..1. Size:202K  ixys
 ixbf42n300.pdf pdf_icon

IXBF42N300

Preliminary Technical InformationHigh Voltage, BiMOSFETTMVCES = 3000VIXBF42N300Monolithic Bipolar MOSIC110 = 24ATransistorVCE(sat) 3.0V(Electrically Isolated Tab)ISOPLUS i4-PakTMSymbol Test Conditions Maximum RatingsVCES TC = 25C to 150C 3000 VVCGR TJ = 25C to 150C, RGE = 1M 3000 VVGES Continuous 25 V12VGEM Transient 35 V

 9.1. Size:85K  ixys
 ixbf40n160.pdf pdf_icon

IXBF42N300

IXBF 40N160IC25 = 28 AHigh VoltageVCES = 1600 VBIMOSFETTMVCE(sat) = 6.2 Vin High Voltage ISOPLUS i4-PACTMtf = 40 nsMonolithic Bipolar MOS Transistor15Features IGBT High Voltage BIMOSFETTMSymbol Conditions Maximum Ratings - substitute for high voltage MOSFETs with significantly lower voltage dropVCES TVJ = 25C to 150C 1600 V- fast switching for high frequ

Datasheet: IXA40PG1200DHGLB , IXA45IF1200HB , IXA55I1200HJ , IXA60IF1200NA , IXBF12N300 , IXBF20N300 , IXBF32N300 , IXBF40N160 , TGAN20N135FD , IXBF55N300 , IXBF9N160G , IXBH10N170 , IXBH12N300 , IXBH16N170 , IXBH16N170A , IXBH20N300 , IXBH24N170 .

History: SGT40N60FD2PT | IXGR50N60C2D1

Keywords - IXBF42N300 transistor datasheet

 IXBF42N300 cross reference
 IXBF42N300 equivalent finder
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