IXBF42N300 Specs and Replacement

Type Designator: IXBF42N300

Type: IGBT

Type of IGBT Channel: N

Absolute Maximum Ratings

Pc ⓘ - Maximum Power Dissipation: 240 W

|Vce|ⓘ - Maximum Collector-Emitter Voltage: 3000 V

|Vge|ⓘ - Maximum Gate-Emitter Voltage: 25 V

|Ic| ⓘ - Maximum Collector Current: 60 A @25℃

Tj ⓘ - Maximum Junction Temperature: 150 ℃

Electrical Characteristics

|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 2.5 V @25℃

tr ⓘ - Rise Time, typ: 330 nS

Coesⓘ - Output Capacitance, typ: 170 pF

Package: ISOPLUS-I4-PAK

 IXBF42N300 Substitution

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IXBF42N300 datasheet

 ..1. Size:202K  ixys
 ixbf42n300.pdf pdf_icon

IXBF42N300

Preliminary Technical Information High Voltage, BiMOSFETTM VCES = 3000V IXBF42N300 Monolithic Bipolar MOS IC110 = 24A Transistor VCE(sat) 3.0V (Electrically Isolated Tab) ISOPLUS i4-PakTM Symbol Test Conditions Maximum Ratings VCES TC = 25 C to 150 C 3000 V VCGR TJ = 25 C to 150 C, RGE = 1M 3000 V VGES Continuous 25 V 1 2 VGEM Transient 35 V ... See More ⇒

 9.1. Size:85K  ixys
 ixbf40n160.pdf pdf_icon

IXBF42N300

IXBF 40N160 IC25 = 28 A High Voltage VCES = 1600 V BIMOSFETTM VCE(sat) = 6.2 V in High Voltage ISOPLUS i4-PACTM tf = 40 ns Monolithic Bipolar MOS Transistor 1 5 Features IGBT High Voltage BIMOSFETTM Symbol Conditions Maximum Ratings - substitute for high voltage MOSFETs with significantly lower voltage drop VCES TVJ = 25 C to 150 C 1600 V - fast switching for high frequ... See More ⇒

Specs: IXA40PG1200DHGLB, IXA45IF1200HB, IXA55I1200HJ, IXA60IF1200NA, IXBF12N300, IXBF20N300, IXBF32N300, IXBF40N160, FGH75T65UPD, IXBF55N300, IXBF9N160G, IXBH10N170, IXBH12N300, IXBH16N170, IXBH16N170A, IXBH20N300, IXBH24N170

Keywords - IXBF42N300 transistor spec

 IXBF42N300 cross reference
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