IXBF55N300 Specs and Replacement

Type Designator: IXBF55N300

Type: IGBT

Type of IGBT Channel: N

Absolute Maximum Ratings

Pc ⓘ - Maximum Power Dissipation: 357 W

|Vce|ⓘ - Maximum Collector-Emitter Voltage: 3000 V

|Vge|ⓘ - Maximum Gate-Emitter Voltage: 25 V

|Ic| ⓘ - Maximum Collector Current: 86 A @25℃

Tj ⓘ - Maximum Junction Temperature: 150 ℃

Electrical Characteristics

|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 2.7 V @25℃

tr ⓘ - Rise Time, typ: 307 nS

Coesⓘ - Output Capacitance, typ: 275 pF

Package: ISOPLUS-I4-PAK

 IXBF55N300 Substitution

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IXBF55N300 datasheet

 ..1. Size:208K  ixys
 ixbf55n300.pdf pdf_icon

IXBF55N300

High Voltage, High Gain VCES = 3000V IXBF55N300 BIMOSFETTM IC110 = 34A VCE(sat) 3.2V Monolithic Bipolar MOS Transistor (Electrically Isolated Tab) ISOPLUS i4-PakTM Symbol Test Conditions Maximum Ratings VCES TC = 25 C to 150 C 3000 V VCGR TJ = 25 C to 150 C, RGE = 1M 3000 V VGES Continuous 25 V 1 2 VGEM Transient 35 V Isolated Tab 5 IC25 TC... See More ⇒

 9.1. Size:209K  ixys
 ixbf50n360.pdf pdf_icon

IXBF55N300

Advance Technical Information BiMOSFETTM Monolithic VCES = 3600V IXBF50N360 Bipolar MOS Transistor IC110 = 28A High Voltage, VCE(sat) 2.9V High Frequency (Electrically Isolated Tab) ISOPLUS i4-PakTM Symbol Test Conditions Maximum Ratings VCES TJ = 25 C to 150 C 3600 V VCGR TJ = 25 C to 150 C, RGE = 1M 3600 V 1 2 VGES Continuous 20 V Isolated Ta... See More ⇒

Specs: IXA45IF1200HB, IXA55I1200HJ, IXA60IF1200NA, IXBF12N300, IXBF20N300, IXBF32N300, IXBF40N160, IXBF42N300, GT30F133, IXBF9N160G, IXBH10N170, IXBH12N300, IXBH16N170, IXBH16N170A, IXBH20N300, IXBH24N170, IXBH28N170A

Keywords - IXBF55N300 transistor spec

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