All IGBT. IXBF55N300 Datasheet

 

IXBF55N300 Datasheet and Replacement


   Type Designator: IXBF55N300
   Type: IGBT
   Type of IGBT Channel: N
   Pcⓘ - Maximum Power Dissipation: 357 W
   |Vce|ⓘ - Maximum Collector-Emitter Voltage: 3000 V
   |Vge|ⓘ - Maximum Gate-Emitter Voltage: 25 V
   |Ic|ⓘ - Maximum Collector Current: 86 A @25℃
   |VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 2.7 V @25℃
   Tjⓘ - Maximum Junction Temperature: 150 ℃
   trⓘ - Rise Time, typ: 307 nS
   Coesⓘ - Output Capacitance, typ: 275 pF
   Package: ISOPLUS-I4-PAK
      - IGBT Cross-Reference

 

IXBF55N300 Datasheet (PDF)

 ..1. Size:208K  ixys
 ixbf55n300.pdf pdf_icon

IXBF55N300

High Voltage, High GainVCES = 3000VIXBF55N300BIMOSFETTMIC110 = 34AVCE(sat) 3.2VMonolithic BipolarMOS Transistor(Electrically Isolated Tab)ISOPLUS i4-PakTMSymbol Test Conditions Maximum RatingsVCES TC = 25C to 150C 3000 VVCGR TJ = 25C to 150C, RGE = 1M 3000 VVGES Continuous 25 V12VGEM Transient 35 VIsolated Tab5IC25 TC

 9.1. Size:209K  ixys
 ixbf50n360.pdf pdf_icon

IXBF55N300

Advance Technical InformationBiMOSFETTM MonolithicVCES = 3600VIXBF50N360Bipolar MOS TransistorIC110 = 28AHigh Voltage,VCE(sat) 2.9VHigh Frequency(Electrically Isolated Tab)ISOPLUS i4-PakTMSymbol Test Conditions Maximum RatingsVCES TJ = 25C to 150C 3600 VVCGR TJ = 25C to 150C, RGE = 1M 3600 V12VGES Continuous 20 VIsolated Ta

Datasheet: IXA45IF1200HB , IXA55I1200HJ , IXA60IF1200NA , IXBF12N300 , IXBF20N300 , IXBF32N300 , IXBF40N160 , IXBF42N300 , STGB10NB37LZ , IXBF9N160G , IXBH10N170 , IXBH12N300 , IXBH16N170 , IXBH16N170A , IXBH20N300 , IXBH24N170 , IXBH28N170A .

History: DIM600DDM17-A

Keywords - IXBF55N300 transistor datasheet

 IXBF55N300 cross reference
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