All IGBT. IXBF55N300 Datasheet

 

IXBF55N300 IGBT. Datasheet pdf. Equivalent

Type Designator: IXBF55N300

Type of IGBT Channel: N-Channel

Maximum Collector-Emitter Voltage |Vce|, V: 3000V

Collector-Emitter saturation Voltage |Vcesat|, V: 3.2V

Maximum Collector Current |Ic|, A: 73A

Rise Time, nS: 268

Package: ISOPLUS_I4-Pak

IXBF55N300 Transistor Equivalent Substitute - IGBT Cross-Reference Search

 

IXBF55N300 Datasheet (PDF)

1.1. ixbf55n300.pdf Size:208K _igbt

IXBF55N300
IXBF55N300

High Voltage, High Gain VCES = 3000V IXBF55N300 BIMOSFETTM IC110 = 34A ≤ VCE(sat) ≤ ≤ 3.2V ≤ ≤ Monolithic Bipolar MOS Transistor (Electrically Isolated Tab) ISOPLUS i4-PakTM Symbol Test Conditions Maximum Ratings VCES TC = 25°C to 150°C 3000 V VCGR TJ = 25°C to 150°C, RGE = 1MΩ 3000 V VGES Continuous ± 25 V 1 2 VGEM Transient ± 35 V Isolated Tab 5 IC25 TC

5.1. ixbf50n360.pdf Size:209K _igbt

IXBF55N300
IXBF55N300

Advance Technical Information BiMOSFETTM Monolithic VCES = 3600V IXBF50N360 Bipolar MOS Transistor IC110 = 28A High Voltage,  VCE(sat)  2.9V    High Frequency (Electrically Isolated Tab) ISOPLUS i4-PakTM Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 3600 V VCGR TJ = 25°C to 150°C, RGE = 1M 3600 V 1 2 VGES Continuous ± 20 V Isolated Ta

Datasheet: IXA45IF1200HB , IXA55I1200HJ , IXA60IF1200NA , IXBF12N300 , IXBF20N300 , IXBF32N300 , IXBF40N160 , IXBF42N300 , STGB10NB37LZ , IXBF9N160G , IXBH10N170 , IXBH12N300 , IXBH16N170 , IXBH16N170A , IXBH20N300 , IXBH24N170 , IXBH28N170A .

 


IXBF55N300
  IXBF55N300
  IXBF55N300
 

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