All IGBT. IXBF9N160G Datasheet

 

IXBF9N160G Datasheet and Replacement


   Type Designator: IXBF9N160G
   Type: IGBT
   Type of IGBT Channel: N
   Pc ⓘ - Maximum Power Dissipation: 70 W
   |Vce|ⓘ - Maximum Collector-Emitter Voltage: 1600 V
   |Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
   |Ic| ⓘ - Maximum Collector Current: 7 A @25℃
   |VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 4.9 V @25℃
   |VGEth|ⓘ - Maximum G-E Threshold Voltag: 5.5 V
   Tj ⓘ - Maximum Junction Temperature: 150 ℃
   tr ⓘ - Rise Time, typ: 200 nS
   Qg ⓘ - Total Gate Charge, typ: 34 nC
   Package: ISOPLUS-I4-PAK
 

 IXBF9N160G substitution

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IXBF9N160G Datasheet (PDF)

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IXBF9N160G

IXBF 9N160 GIC25 = 7 AHigh VoltageVCES = 1600 VBIMOSFETTMVCE(sat) = 4.9 Vin High Voltage ISOPLUS i4-PACTMtf = 70 ansMonolithic Bipolar MOS Transistor15Features IGBT High Voltage BIMOSFETTMSymbol Conditions Maximum Ratings - substitute for high voltage MOSFETs with significantly lower voltage dropVCES TVJ = 25C to 150C 1600 V- MOSFET compatible control

Datasheet: IXA55I1200HJ , IXA60IF1200NA , IXBF12N300 , IXBF20N300 , IXBF32N300 , IXBF40N160 , IXBF42N300 , IXBF55N300 , RJH60F5DPQ-A0 , IXBH10N170 , IXBH12N300 , IXBH16N170 , IXBH16N170A , IXBH20N300 , IXBH24N170 , IXBH28N170A , IXBH2N250 .

History: CM400DY-12H | FD600R12KF4

Keywords - IXBF9N160G transistor datasheet

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