IXBF9N160G Specs and Replacement
Type Designator: IXBF9N160G
Type: IGBT
Type of IGBT Channel: N
Absolute Maximum Ratings
Pc ⓘ - Maximum Power Dissipation: 70 W
|Vce|ⓘ - Maximum Collector-Emitter Voltage: 1600 V
|Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
|Ic| ⓘ - Maximum Collector Current: 7 A @25℃
Tj ⓘ - Maximum Junction Temperature: 150 ℃
Electrical Characteristics
|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 4.9 V @25℃
Package: ISOPLUS-I4-PAK IXBF9N160G Substitution - IGBTⓘ Cross-Reference Search
IXBF9N160G datasheet
Specs: IXA55I1200HJ, IXA60IF1200NA, IXBF12N300, IXBF20N300, IXBF32N300, IXBF40N160, IXBF42N300, IXBF55N300, TGAN60N60F2DS, IXBH10N170, IXBH12N300, IXBH16N170, IXBH16N170A, IXBH20N300, IXBH24N170, IXBH28N170A, IXBH2N250
Keywords - IXBF9N160G transistor spec
IXBF9N160G cross reference
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History: IXBF55N300
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