IXBF9N160G IGBT. Datasheet pdf. Equivalent
Type Designator: IXBF9N160G
Type: IGBT
Type of IGBT Channel: N
Pcⓘ - Maximum Power Dissipation: 70 W
|Vce|ⓘ - Maximum Collector-Emitter Voltage: 1600 V
|Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
|Ic|ⓘ - Maximum Collector Current: 7 A @25℃
|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 4.9 V @25℃
|VGEth|ⓘ - Maximum G-E Threshold Voltag: 5.5 V
Tjⓘ - Maximum Junction Temperature: 150 ℃
trⓘ - Rise Time, typ: 200 nS
Qgⓘ - Total Gate Charge, typ: 34 nC
Package: ISOPLUS-I4-PAK
IXBF9N160G Transistor Equivalent Substitute - IGBT Cross-Reference Search
IXBF9N160G Datasheet (PDF)
ixbf9n160g.pdf
IXBF 9N160 GIC25 = 7 AHigh VoltageVCES = 1600 VBIMOSFETTMVCE(sat) = 4.9 Vin High Voltage ISOPLUS i4-PACTMtf = 70 ansMonolithic Bipolar MOS Transistor15Features IGBT High Voltage BIMOSFETTMSymbol Conditions Maximum Ratings - substitute for high voltage MOSFETs with significantly lower voltage dropVCES TVJ = 25C to 150C 1600 V- MOSFET compatible control
Datasheet: IXA55I1200HJ , IXA60IF1200NA , IXBF12N300 , IXBF20N300 , IXBF32N300 , IXBF40N160 , IXBF42N300 , IXBF55N300 , MGD623S , IXBH10N170 , IXBH12N300 , IXBH16N170 , IXBH16N170A , IXBH20N300 , IXBH24N170 , IXBH28N170A , IXBH2N250 .
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