IXBH6N170 Datasheet and Replacement
Type Designator: IXBH6N170
Type: IGBT + Anti-Parallel Diode
Type of IGBT Channel: N
Pc ⓘ - Maximum Power Dissipation: 75 W
|Vce|ⓘ - Maximum Collector-Emitter Voltage: 1700 V
|Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
|Ic| ⓘ - Maximum Collector Current: 12 A @25℃
|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 2.84 V @25℃
|VGEth|ⓘ - Maximum G-E Threshold Voltag: 5.5 V
Tj ⓘ - Maximum Junction Temperature: 150 ℃
tr ⓘ - Rise Time, typ: 59 nS
Coesⓘ - Output Capacitance, typ: 25 pF
Qg ⓘ - Total Gate Charge, typ: 17 nC
Package: TO247
IXBH6N170 substitution
IXBH6N170 Datasheet (PDF)
ixbh6n170.pdf
High Voltage, High GainVCES = 1700VIXBH6N170BIMOSFETTM MonolithicIXBT6N170IC90 = 6ABipolar MOS TransistorVCE(sat) 3.4VTO-247 (IXBH)Symbol Test Conditions Maximum RatingsVCES TC = 25C to 150C 1700 VVCGR TJ = 25C to 150C, RGE = 1M 1700 VGVGES Continuous 20 VC (TAB)CEVGEM Transient 30 VIC25 TC = 25C 12 ATO-268 (IXBT)
ixbh6n170 ixbt6n170.pdf
High Voltage, High GainVCES = 1700VIXBH6N170BIMOSFETTM MonolithicIXBT6N170IC90 = 6ABipolar MOS TransistorVCE(sat) 3.4VTO-247 (IXBH)Symbol Test Conditions Maximum RatingsVCES TC = 25C to 150C 1700 VVCGR TJ = 25C to 150C, RGE = 1M 1700 VGVGES Continuous 20 VC (TAB)CEVGEM Transient 30 VIC25 TC = 25C 12 ATO-268 (IXBT)
Datasheet: IXBH24N170 , IXBH28N170A , IXBH2N250 , IXBH32N300 , IXBH40N160 , IXBH42N170 , IXBH42N170A , IXBH5N160G , RJH60F7BDPQ-A0 , IXBH9N160G , IXBK55N300 , IXBK64N250 , IXBK75N170 , IXBK75N170A , IXBL64N250 , IXBN42N170A , IXBN75N170 .
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