IXBH6N170 Specs and Replacement

Type Designator: IXBH6N170

Type: IGBT

Type of IGBT Channel: N

Absolute Maximum Ratings

Pc ⓘ - Maximum Power Dissipation: 75 W

|Vce|ⓘ - Maximum Collector-Emitter Voltage: 1700 V

|Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V

|Ic| ⓘ - Maximum Collector Current: 12 A @25℃

Tj ⓘ - Maximum Junction Temperature: 150 ℃

Electrical Characteristics

|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 2.84 V @25℃

tr ⓘ - Rise Time, typ: 59 nS

Coesⓘ - Output Capacitance, typ: 25 pF

Package: TO247

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IXBH6N170 datasheet

 ..1. Size:178K  ixys
 ixbh6n170.pdf pdf_icon

IXBH6N170

High Voltage, High Gain VCES = 1700V IXBH6N170 BIMOSFETTM Monolithic IXBT6N170 IC90 = 6A Bipolar MOS Transistor VCE(sat) 3.4V TO-247 (IXBH) Symbol Test Conditions Maximum Ratings VCES TC = 25 C to 150 C 1700 V VCGR TJ = 25 C to 150 C, RGE = 1M 1700 V G VGES Continuous 20 V C (TAB) C E VGEM Transient 30 V IC25 TC = 25 C 12 A TO-268 (IXBT) ... See More ⇒

 ..2. Size:181K  ixys
 ixbh6n170 ixbt6n170.pdf pdf_icon

IXBH6N170

High Voltage, High Gain VCES = 1700V IXBH6N170 BIMOSFETTM Monolithic IXBT6N170 IC90 = 6A Bipolar MOS Transistor VCE(sat) 3.4V TO-247 (IXBH) Symbol Test Conditions Maximum Ratings VCES TC = 25 C to 150 C 1700 V VCGR TJ = 25 C to 150 C, RGE = 1M 1700 V G VGES Continuous 20 V C (TAB) C E VGEM Transient 30 V IC25 TC = 25 C 12 A TO-268 (IXBT) ... See More ⇒

Specs: IXBH24N170, IXBH28N170A, IXBH2N250, IXBH32N300, IXBH40N160, IXBH42N170, IXBH42N170A, IXBH5N160G, SGT40N60FD2PT, IXBH9N160G, IXBK55N300, IXBK64N250, IXBK75N170, IXBK75N170A, IXBL64N250, IXBN42N170A, IXBN75N170

Keywords - IXBH6N170 transistor spec

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