IXBK55N300 Datasheet and Replacement
Type Designator: IXBK55N300
Type: IGBT
Type of IGBT Channel: N
Pcⓘ - Maximum Power Dissipation: 625 W
|Vce|ⓘ - Maximum Collector-Emitter Voltage: 3000 V
|Vge|ⓘ - Maximum Gate-Emitter Voltage: 25 V
|Ic|ⓘ - Maximum Collector Current: 130 A @25℃
|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 2.7 V @25℃
Tjⓘ - Maximum Junction Temperature: 150 ℃
trⓘ - Rise Time, typ: 307 nS
Coesⓘ - Output Capacitance, typ: 275 pF
Package: TO264
- IGBT Cross-Reference
IXBK55N300 Datasheet (PDF)
ixbk55n300.pdf

High Voltage, High GainVCES = 3000VIXBK55N300BiMOSFETTMIC110 = 55AIXBX55N300VCE(sat) 3.2VMonolithic BipolarMOS TransistorTO-264 (IXBK)Symbol Test Conditions Maximum RatingsGCVCES TJ = 25C to 150C 3000 VETabVCGR TJ = 25C to 150C, RGE = 1M 3000 VVGES Continuous 25 VPLUS247 (IXBX)VGEM Transient 35 VIC25 TC = 25C ( Chip
Datasheet: IXBH2N250 , IXBH32N300 , IXBH40N160 , IXBH42N170 , IXBH42N170A , IXBH5N160G , IXBH6N170 , IXBH9N160G , XNF15N60T , IXBK64N250 , IXBK75N170 , IXBK75N170A , IXBL64N250 , IXBN42N170A , IXBN75N170 , IXBN75N170A , IXBP5N160G .
History: MG25Q6ES51 | 7MBR75U2B060
Keywords - IXBK55N300 transistor datasheet
IXBK55N300 cross reference
IXBK55N300 equivalent finder
IXBK55N300 lookup
IXBK55N300 substitution
IXBK55N300 replacement
History: MG25Q6ES51 | 7MBR75U2B060



LIST
Last Update
IGBT: G50T65LBBW | G50T65DS | G40N120D | G25T120D | DHG60T65D | DGF30F65M2 | DGE20F65M2 | DGD06F65M2 | DGC75F65M | DGC75F120M2 | DGC60F65M
Popular searches
2sc1815 datasheet | mj15015 | 13003 transistor datasheet | 2n3416 | bdx53c | k3563 | d882p | 2sb1560