All IGBT. IXBL64N250 Datasheet

 

IXBL64N250 Datasheet and Replacement


   Type Designator: IXBL64N250
   Type: IGBT
   Type of IGBT Channel: N
   Pcⓘ - Maximum Power Dissipation: 500 W
   |Vce|ⓘ - Maximum Collector-Emitter Voltage: 2500 V
   |Vge|ⓘ - Maximum Gate-Emitter Voltage: 25 V
   |Ic|ⓘ - Maximum Collector Current: 116 A @25℃
   |VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 2.5 V @25℃
   Tjⓘ - Maximum Junction Temperature: 150 ℃
   trⓘ - Rise Time, typ: 318 nS
   Coesⓘ - Output Capacitance, typ: 345 pF
   Package: ISOPLUS-I5-PAK
      - IGBT Cross-Reference

 

IXBL64N250 Datasheet (PDF)

 ..1. Size:184K  ixys
 ixbl64n250.pdf pdf_icon

IXBL64N250

Advance Technical InformationHigh Voltage, High Gain VCES = 2500VIXBL64N250BiMOSFETTM IC110 = 46AVCE(sat) 3.0VMonolithic BipolarMOS Transistor(Electrically Isolated Tab)ISOPLUS i5-PakTMSymbol Test Conditions Maximum RatingsVCES TJ = 25C to 150C 2500 VVCGR TJ = 25C to 150C, RGE = 1M 2500 V GE Isolated TabCVGES Continuous 25 VVGE

 9.1. Size:166K  ixys
 ixbl60n360.pdf pdf_icon

IXBL64N250

Advance Technical InformationHigh Voltage,VCES = 3600VIXBL60N360High Frequency,IC110 = 36ABiMOSFETTM MonolithicVCE(sat) 3.4VBipolar MOS Transistor(Electrically Isolated Tab)ISOPLUS i5-PakTMSymbol Test Conditions Maximum RatingsVCES TJ = 25C to 150C 3600 VVCGR TJ = 25C to 150C, RGE = 1M 3600 VGECVGES Continuous 20 V Isolated

Datasheet: IXBH42N170A , IXBH5N160G , IXBH6N170 , IXBH9N160G , IXBK55N300 , IXBK64N250 , IXBK75N170 , IXBK75N170A , IRG4PF50W , IXBN42N170A , IXBN75N170 , IXBN75N170A , IXBP5N160G , IXBR42N170 , IXBT10N170 , IXBT12N300 , IXBT16N170 .

History: ISL9V2040S3S | MSAGX75L60B | 7MBP75TEA060 | 2MBI900VXA-120P-50 | BT15T60A8F | MIXA10WB1200TML | IQGB300N120I4

Keywords - IXBL64N250 transistor datasheet

 IXBL64N250 cross reference
 IXBL64N250 equivalent finder
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