IXBL64N250 Specs and Replacement

Type Designator: IXBL64N250

Type: IGBT

Type of IGBT Channel: N

Absolute Maximum Ratings

Pc ⓘ - Maximum Power Dissipation: 500 W

|Vce|ⓘ - Maximum Collector-Emitter Voltage: 2500 V

|Vge|ⓘ - Maximum Gate-Emitter Voltage: 25 V

|Ic| ⓘ - Maximum Collector Current: 116 A @25℃

Tj ⓘ - Maximum Junction Temperature: 150 ℃

Electrical Characteristics

|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 2.5 V @25℃

tr ⓘ - Rise Time, typ: 318 nS

Coesⓘ - Output Capacitance, typ: 345 pF

Package: ISOPLUS-I5-PAK

 IXBL64N250 Substitution

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IXBL64N250 datasheet

 ..1. Size:184K  ixys
 ixbl64n250.pdf pdf_icon

IXBL64N250

Advance Technical Information High Voltage, High Gain VCES = 2500V IXBL64N250 BiMOSFETTM IC110 = 46A VCE(sat) 3.0V Monolithic Bipolar MOS Transistor (Electrically Isolated Tab) ISOPLUS i5-PakTM Symbol Test Conditions Maximum Ratings VCES TJ = 25 C to 150 C 2500 V VCGR TJ = 25 C to 150 C, RGE = 1M 2500 V G E Isolated Tab C VGES Continuous 25 V VGE... See More ⇒

 9.1. Size:166K  ixys
 ixbl60n360.pdf pdf_icon

IXBL64N250

Advance Technical Information High Voltage, VCES = 3600V IXBL60N360 High Frequency, IC110 = 36A BiMOSFETTM Monolithic VCE(sat) 3.4V Bipolar MOS Transistor (Electrically Isolated Tab) ISOPLUS i5-PakTM Symbol Test Conditions Maximum Ratings VCES TJ = 25 C to 150 C 3600 V VCGR TJ = 25 C to 150 C, RGE = 1M 3600 V G E C VGES Continuous 20 V Isolated... See More ⇒

Specs: IXBH42N170A, IXBH5N160G, IXBH6N170, IXBH9N160G, IXBK55N300, IXBK64N250, IXBK75N170, IXBK75N170A, IKW40N65WR5, IXBN42N170A, IXBN75N170, IXBN75N170A, IXBP5N160G, IXBR42N170, IXBT10N170, IXBT12N300, IXBT16N170

Keywords - IXBL64N250 transistor spec

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