All IGBT. IXBN75N170 Datasheet

 

IXBN75N170 Datasheet and Replacement


   Type Designator: IXBN75N170
   Type: IGBT
   Type of IGBT Channel: N
   Pcⓘ - Maximum Power Dissipation: 625 W
   |Vce|ⓘ - Maximum Collector-Emitter Voltage: 1700 V
   |Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
   |Ic|ⓘ - Maximum Collector Current: 145 A @25℃
   |VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 2.6 V @25℃
   Tjⓘ - Maximum Junction Temperature: 150 ℃
   trⓘ - Rise Time, typ: 160 nS
   Coesⓘ - Output Capacitance, typ: 400 pF
   Package: SOT227B
      - IGBT Cross-Reference

 

IXBN75N170 Datasheet (PDF)

 ..1. Size:173K  ixys
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IXBN75N170

Preliminary Technical InformationBiMOSFETTM Monolithic VCES = 1700VIXBN75N170Bipolar MOS Transistor IC90 = 75AVCE(sat) 3.1VSOT-227B, miniBLOC E153432Symbol Test Conditions Maximum RatingsE VCES TJ = 25C to 150C 1700 VGVCGR TJ = 25C to 150C, RGE = 1M 1700 VVGES Continuous 20 VVGEM Transient 30 VE IC25 TC = 25C 145 ACIC90

 0.1. Size:187K  ixys
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IXBN75N170

Preliminary Technical InformationBiMOSFETTM Monolithic VCES = 1700VIXBN75N170ABipolar MOS Transistor IC90 = 42AVCE(sat) 6.00Vtfi(typ) = 60nsSOT-227B, miniBLOC E153432Symbol Test Conditions Maximum RatingsE VCES TJ = 25C to 150C 1700 VGVCGR TJ = 25C to 150C, RGE = 1M 1700 VVGES Continuous 20 VVGEM Transient 30 VE IC25 TC = 2

Datasheet: IXBH6N170 , IXBH9N160G , IXBK55N300 , IXBK64N250 , IXBK75N170 , IXBK75N170A , IXBL64N250 , IXBN42N170A , NCE80TD65BT , IXBN75N170A , IXBP5N160G , IXBR42N170 , IXBT10N170 , IXBT12N300 , IXBT16N170 , IXBT16N170A , IXBT20N300 .

History: 2MBI100UA-120 | SKM150GB12T4

Keywords - IXBN75N170 transistor datasheet

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