IXBP5N160G Specs and Replacement

Type Designator: IXBP5N160G

Type: IGBT

Type of IGBT Channel: N

Absolute Maximum Ratings

Pc ⓘ - Maximum Power Dissipation: 68 W

|Vce|ⓘ - Maximum Collector-Emitter Voltage: 1600 V

|Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V

|Ic| ⓘ - Maximum Collector Current: 5.7 A @25℃

Tj ⓘ - Maximum Junction Temperature: 150 ℃

Electrical Characteristics

|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 4.9 V @25℃

tr ⓘ - Rise Time, typ: 200 nS

Package: TO220

 IXBP5N160G Substitution

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IXBP5N160G datasheet

 ..1. Size:24K  ixys
 ixbp5n160g ixbh5n160g.pdf pdf_icon

IXBP5N160G

IXBP 5N160 G IC25 = 5.7 A High Voltage IXBH 5N160 G VCES = 1600 V BIMOSFETTM VCE(sat) = 4.9 V tf = 70 ns Monolithic Bipolar MOS Transistor C TO-220 AB (IXBP) Preliminary data sheet G C C (TAB) E G TO-247 AD (IXBH) E G C C (TAB) E A = Anode, C = Cathode , TAB = Cathode IGBT Features Symbol Conditions Maximum Ratings High Voltage BIMOSFETTM - substitute for high v... See More ⇒

 ..2. Size:28K  ixys
 ixbp5n160g.pdf pdf_icon

IXBP5N160G

IXBP 5N160 G IC25 = 5.7 A High Voltage IXBH 5N160 G VCES = 1600 V BIMOSFETTM VCE(sat) = 4.9 V tf = 70 ns Monolithic Bipolar MOS Transistor C TO-220 AB (IXBP) Preliminary data sheet G C C (TAB) E G TO-247 AD (IXBH) E G C C (TAB) E A = Anode, C = Cathode , TAB = Cathode IGBT Features Symbol Conditions Maximum Ratings High Voltage BIMOSFETTM - substitute for high v... See More ⇒

Specs: IXBK55N300, IXBK64N250, IXBK75N170, IXBK75N170A, IXBL64N250, IXBN42N170A, IXBN75N170, IXBN75N170A, XNF15N60T, IXBR42N170, IXBT10N170, IXBT12N300, IXBT16N170, IXBT16N170A, IXBT20N300, IXBT24N170, IXBT28N170A

Keywords - IXBP5N160G transistor spec

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