IXBP5N160G Datasheet and Replacement
Type Designator: IXBP5N160G
Type: IGBT
Type of IGBT Channel: N
Pc ⓘ - Maximum Power Dissipation: 68 W
|Vce|ⓘ - Maximum Collector-Emitter Voltage: 1600 V
|Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
|Ic| ⓘ - Maximum Collector Current: 5.7 A @25℃
|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 4.9 V @25℃
Tj ⓘ - Maximum Junction Temperature: 150 ℃
tr ⓘ - Rise Time, typ: 200 nS
Package: TO220
IXBP5N160G substitution
IXBP5N160G Datasheet (PDF)
ixbp5n160g ixbh5n160g.pdf
IXBP 5N160 GIC25 = 5.7 AHigh VoltageIXBH 5N160 GVCES = 1600 VBIMOSFETTMVCE(sat) = 4.9 Vtf = 70 nsMonolithic Bipolar MOS TransistorCTO-220 AB (IXBP)Preliminary data sheetGCC (TAB)EGTO-247 AD (IXBH)EGCC (TAB)EA = Anode, C = Cathode , TAB = Cathode IGBTFeaturesSymbol Conditions Maximum Ratings High Voltage BIMOSFETTM- substitute for high v
ixbp5n160g.pdf
IXBP 5N160 GIC25 = 5.7 AHigh VoltageIXBH 5N160 GVCES = 1600 VBIMOSFETTMVCE(sat) = 4.9 Vtf = 70 nsMonolithic Bipolar MOS TransistorCTO-220 AB (IXBP)Preliminary data sheetGCC (TAB)EGTO-247 AD (IXBH)EGCC (TAB)EA = Anode, C = Cathode , TAB = Cathode IGBTFeaturesSymbol Conditions Maximum Ratings High Voltage BIMOSFETTM- substitute for high v
Datasheet: IXBK55N300 , IXBK64N250 , IXBK75N170 , IXBK75N170A , IXBL64N250 , IXBN42N170A , IXBN75N170 , IXBN75N170A , RGT50TS65D , IXBR42N170 , IXBT10N170 , IXBT12N300 , IXBT16N170 , IXBT16N170A , IXBT20N300 , IXBT24N170 , IXBT28N170A .
History: F4-50R12KS4_B11 | IXYX100N120C3 | AOK60B65H2AL
Keywords - IXBP5N160G transistor datasheet
IXBP5N160G cross reference
IXBP5N160G equivalent finder
IXBP5N160G lookup
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History: F4-50R12KS4_B11 | IXYX100N120C3 | AOK60B65H2AL
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