All IGBT. IXBP5N160G Datasheet

 

IXBP5N160G Datasheet and Replacement


   Type Designator: IXBP5N160G
   Type: IGBT
   Type of IGBT Channel: N
   Pcⓘ - Maximum Power Dissipation: 68 W
   |Vce|ⓘ - Maximum Collector-Emitter Voltage: 1600 V
   |Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
   |Ic|ⓘ - Maximum Collector Current: 5.7 A @25℃
   |VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 4.9 V @25℃
   Tjⓘ - Maximum Junction Temperature: 150 ℃
   trⓘ - Rise Time, typ: 200 nS
   Package: TO220
      - IGBT Cross-Reference

 

IXBP5N160G Datasheet (PDF)

 ..1. Size:24K  ixys
 ixbp5n160g ixbh5n160g.pdf pdf_icon

IXBP5N160G

IXBP 5N160 GIC25 = 5.7 AHigh VoltageIXBH 5N160 GVCES = 1600 VBIMOSFETTMVCE(sat) = 4.9 Vtf = 70 nsMonolithic Bipolar MOS TransistorCTO-220 AB (IXBP)Preliminary data sheetGCC (TAB)EGTO-247 AD (IXBH)EGCC (TAB)EA = Anode, C = Cathode , TAB = Cathode IGBTFeaturesSymbol Conditions Maximum Ratings High Voltage BIMOSFETTM- substitute for high v

 ..2. Size:28K  ixys
 ixbp5n160g.pdf pdf_icon

IXBP5N160G

IXBP 5N160 GIC25 = 5.7 AHigh VoltageIXBH 5N160 GVCES = 1600 VBIMOSFETTMVCE(sat) = 4.9 Vtf = 70 nsMonolithic Bipolar MOS TransistorCTO-220 AB (IXBP)Preliminary data sheetGCC (TAB)EGTO-247 AD (IXBH)EGCC (TAB)EA = Anode, C = Cathode , TAB = Cathode IGBTFeaturesSymbol Conditions Maximum Ratings High Voltage BIMOSFETTM- substitute for high v

Datasheet: IXBK55N300 , IXBK64N250 , IXBK75N170 , IXBK75N170A , IXBL64N250 , IXBN42N170A , IXBN75N170 , IXBN75N170A , IRG4PH50UD , IXBR42N170 , IXBT10N170 , IXBT12N300 , IXBT16N170 , IXBT16N170A , IXBT20N300 , IXBT24N170 , IXBT28N170A .

History: APT20GF120BRDQ1G | 2MBI200NB-120 | NGTB20N135IHR | BM63763S-VC | BLG15T65FUL-P | MG100HF12MRC1 | FD400R33KF2C

Keywords - IXBP5N160G transistor datasheet

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