IXBT6N170 IGBT. Datasheet pdf. Equivalent

Type Designator: IXBT6N170

Type of IGBT Channel: N-Channel

Maximum Collector-Emitter Voltage |Vce|, V: 1700V

Collector-Emitter saturation Voltage |Vcesat|, V: 3.4V

Maximum Collector Current |Ic|, A: 10A

Rise Time, nS: 690

Package: TO268

IXBT6N170 Transistor Equivalent Substitute - IGBT Cross-Reference Search

IXBT6N170 Datasheet (PDF)

1.1. ixbt6n170.pdf Size:178K _igbt

High Voltage, High Gain VCES = 1700V IXBH6N170 BIMOSFETTM Monolithic IXBT6N170 IC90 = 6A Bipolar MOS Transistor ≤ VCE(sat) ≤ ≤ 3.4V ≤ ≤ TO-247 (IXBH) Symbol Test Conditions Maximum Ratings VCES TC = 25°C to 150°C 1700 V VCGR TJ = 25°C to 150°C, RGE = 1MΩ 1700 V G VGES Continuous ± 20 V C (TAB) C E VGEM Transient ± 30 V IC25 TC = 25°C 12 A TO-268 (IXBT)

Datasheet: IXBT16N170A , IXBT20N300 , IXBT24N170 , IXBT28N170A , IXBT2N250 , IXBT32N300 , IXBT42N170 , IXBT42N170A , IRG4PC50FD , IXBX25N250 , IXBX55N300 , IXBX64N250 , IXBX75N170 , IXBX75N170A , IXDH35N60B , IXDH35N60BD1 , IXDP20N60B .

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