IXBT6N170 Datasheet and Replacement
Type Designator: IXBT6N170
Type: IGBT + Anti-Parallel Diode
Type of IGBT Channel: N
Pc ⓘ - Maximum Power Dissipation: 75 W
|Vce|ⓘ - Maximum Collector-Emitter Voltage: 1700 V
|Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
|Ic| ⓘ - Maximum Collector Current: 12 A @25℃
|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 2.84 V @25℃
|VGEth|ⓘ - Maximum G-E Threshold Voltag: 5.5 V
Tj ⓘ - Maximum Junction Temperature: 150 ℃
tr ⓘ - Rise Time, typ: 59 nS
Coesⓘ - Output Capacitance, typ: 25 pF
Qg ⓘ - Total Gate Charge, typ: 17 nC
Package: TO268
IXBT6N170 substitution
IXBT6N170 Datasheet (PDF)
ixbh6n170 ixbt6n170.pdf
High Voltage, High GainVCES = 1700VIXBH6N170BIMOSFETTM MonolithicIXBT6N170IC90 = 6ABipolar MOS TransistorVCE(sat) 3.4VTO-247 (IXBH)Symbol Test Conditions Maximum RatingsVCES TC = 25C to 150C 1700 VVCGR TJ = 25C to 150C, RGE = 1M 1700 VGVGES Continuous 20 VC (TAB)CEVGEM Transient 30 VIC25 TC = 25C 12 ATO-268 (IXBT)
ixbt6n170.pdf
High Voltage, High GainVCES = 1700VIXBH6N170BIMOSFETTM MonolithicIXBT6N170IC90 = 6ABipolar MOS TransistorVCE(sat) 3.4VTO-247 (IXBH)Symbol Test Conditions Maximum RatingsVCES TC = 25C to 150C 1700 VVCGR TJ = 25C to 150C, RGE = 1M 1700 VGVGES Continuous 20 VC (TAB)CEVGEM Transient 30 VIC25 TC = 25C 12 ATO-268 (IXBT)
Datasheet: IXBT16N170A , IXBT20N300 , IXBT24N170 , IXBT28N170A , IXBT2N250 , IXBT32N300 , IXBT42N170 , IXBT42N170A , BT15T120ANF , IXBX25N250 , IXBX55N300 , IXBX64N250 , IXBX75N170 , IXBX75N170A , IXDH35N60B , IXDH35N60BD1 , IXDP20N60B .
History: SPT25N135F1A | MMG75J120U | STGWA30H60DFB | 2MBI200VA-060-50 | IRG4BC30KD-S | 2MBI225U4N-170-50 | AIKW75N60CT
Keywords - IXBT6N170 transistor datasheet
IXBT6N170 cross reference
IXBT6N170 equivalent finder
IXBT6N170 lookup
IXBT6N170 substitution
IXBT6N170 replacement
History: SPT25N135F1A | MMG75J120U | STGWA30H60DFB | 2MBI200VA-060-50 | IRG4BC30KD-S | 2MBI225U4N-170-50 | AIKW75N60CT
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