IXBT6N170 Specs and Replacement

Type Designator: IXBT6N170

Type: IGBT

Type of IGBT Channel: N

Absolute Maximum Ratings

Pc ⓘ - Maximum Power Dissipation: 75 W

|Vce|ⓘ - Maximum Collector-Emitter Voltage: 1700 V

|Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V

|Ic| ⓘ - Maximum Collector Current: 12 A @25℃

Tj ⓘ - Maximum Junction Temperature: 150 ℃

Electrical Characteristics

|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 2.84 V @25℃

tr ⓘ - Rise Time, typ: 59 nS

Coesⓘ - Output Capacitance, typ: 25 pF

Package: TO268

 IXBT6N170 Substitution

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IXBT6N170 datasheet

 ..1. Size:181K  ixys
 ixbh6n170 ixbt6n170.pdf pdf_icon

IXBT6N170

High Voltage, High Gain VCES = 1700V IXBH6N170 BIMOSFETTM Monolithic IXBT6N170 IC90 = 6A Bipolar MOS Transistor VCE(sat) 3.4V TO-247 (IXBH) Symbol Test Conditions Maximum Ratings VCES TC = 25 C to 150 C 1700 V VCGR TJ = 25 C to 150 C, RGE = 1M 1700 V G VGES Continuous 20 V C (TAB) C E VGEM Transient 30 V IC25 TC = 25 C 12 A TO-268 (IXBT) ... See More ⇒

 ..2. Size:178K  ixys
 ixbt6n170.pdf pdf_icon

IXBT6N170

High Voltage, High Gain VCES = 1700V IXBH6N170 BIMOSFETTM Monolithic IXBT6N170 IC90 = 6A Bipolar MOS Transistor VCE(sat) 3.4V TO-247 (IXBH) Symbol Test Conditions Maximum Ratings VCES TC = 25 C to 150 C 1700 V VCGR TJ = 25 C to 150 C, RGE = 1M 1700 V G VGES Continuous 20 V C (TAB) C E VGEM Transient 30 V IC25 TC = 25 C 12 A TO-268 (IXBT) ... See More ⇒

Specs: IXBT16N170A, IXBT20N300, IXBT24N170, IXBT28N170A, IXBT2N250, IXBT32N300, IXBT42N170, IXBT42N170A, FGPF4533, IXBX25N250, IXBX55N300, IXBX64N250, IXBX75N170, IXBX75N170A, IXDH35N60B, IXDH35N60BD1, IXDP20N60B

Keywords - IXBT6N170 transistor spec

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