All IGBT. IXBT6N170 Datasheet

 

IXBT6N170 Datasheet and Replacement


   Type Designator: IXBT6N170
   Type: IGBT
   Type of IGBT Channel: N
   Pc ⓘ - Maximum Power Dissipation: 75 W
   |Vce|ⓘ - Maximum Collector-Emitter Voltage: 1700 V
   |Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
   |Ic| ⓘ - Maximum Collector Current: 12 A @25℃
   |VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 2.84 V @25℃
   Tj ⓘ - Maximum Junction Temperature: 150 ℃
   tr ⓘ - Rise Time, typ: 59 nS
   Coesⓘ - Output Capacitance, typ: 25 pF
   Package: TO268
 

 IXBT6N170 substitution

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IXBT6N170 Datasheet (PDF)

 ..1. Size:181K  ixys
ixbh6n170 ixbt6n170.pdf pdf_icon

IXBT6N170

High Voltage, High GainVCES = 1700VIXBH6N170BIMOSFETTM MonolithicIXBT6N170IC90 = 6ABipolar MOS TransistorVCE(sat) 3.4VTO-247 (IXBH)Symbol Test Conditions Maximum RatingsVCES TC = 25C to 150C 1700 VVCGR TJ = 25C to 150C, RGE = 1M 1700 VGVGES Continuous 20 VC (TAB)CEVGEM Transient 30 VIC25 TC = 25C 12 ATO-268 (IXBT)

 ..2. Size:178K  ixys
ixbt6n170.pdf pdf_icon

IXBT6N170

High Voltage, High GainVCES = 1700VIXBH6N170BIMOSFETTM MonolithicIXBT6N170IC90 = 6ABipolar MOS TransistorVCE(sat) 3.4VTO-247 (IXBH)Symbol Test Conditions Maximum RatingsVCES TC = 25C to 150C 1700 VVCGR TJ = 25C to 150C, RGE = 1M 1700 VGVGES Continuous 20 VC (TAB)CEVGEM Transient 30 VIC25 TC = 25C 12 ATO-268 (IXBT)

Datasheet: IXBT16N170A , IXBT20N300 , IXBT24N170 , IXBT28N170A , IXBT2N250 , IXBT32N300 , IXBT42N170 , IXBT42N170A , BT15T120ANF , IXBX25N250 , IXBX55N300 , IXBX64N250 , IXBX75N170 , IXBX75N170A , IXDH35N60B , IXDH35N60BD1 , IXDP20N60B .

History: IXSN35N120AU1 | IRG4BC30KD-S

Keywords - IXBT6N170 transistor datasheet

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