All IGBT. IXBX25N250 Datasheet

 

IXBX25N250 IGBT. Datasheet pdf. Equivalent


   Type Designator: IXBX25N250
   Type: IGBT + Anti-Parallel Diode
   Type of IGBT Channel: N
   Pcⓘ - Maximum Power Dissipation: 300 W
   |Vce|ⓘ - Maximum Collector-Emitter Voltage: 2500 V
   |Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
   |Ic|ⓘ - Maximum Collector Current: 55 A @25℃
   |VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 3.3(max) V @25℃
   |VGEth|ⓘ - Maximum G-E Threshold Voltag: 5 V
   Tjⓘ - Maximum Junction Temperature: 150 ℃
   trⓘ - Rise Time, typ: 240 nS
   Coesⓘ - Output Capacitance, typ: 96 pF
   Qgⓘ - Total Gate Charge, typ: 103 nC
   Package: PLUS247

 IXBX25N250 Transistor Equivalent Substitute - IGBT Cross-Reference Search

 

IXBX25N250 Datasheet (PDF)

 ..1. Size:163K  ixys
 ixbx25n250.pdf

IXBX25N250 IXBX25N250

High Voltage, High GainVCES = 2500VIXBX25N250BIMOSFETTM MonolithicIC90 = 25ABipolar MOS TransistorVCE(sat) 3.3VSymbol Test Conditions Maximum RatingsPLUS247TMVCES TC = 25C to 150C 2500 VVCGR TJ = 25C to 150C, RGE = 1M 2500 VVGES Continuous 20 VVGEM Transient 30 VGIC25 TC = 25C 55 ACTabEIC90 TC = 90C 25 AICM TC = 2

 9.1. Size:201K  ixys
 ixbx28n300hv.pdf

IXBX25N250 IXBX25N250

Advance Technical InformationHigh Voltage, High GainVCES = 3000VIXBX28N300HVBIMOSFETTM MonolithicIC110 = 28ABipolar MOS TransistorVCE(sat) 2.7VTO-247PLUS-HVSymbol Test Conditions Maximum RatingsVCES TJ = 25C to 150C 3000 VVCGR TJ = 25C to 150C, RGE = 1M 3000 VGEVGES Continuous 20 VTabCVGEM Transient 30 VIC25 TC = 25C 6

Datasheet: IXBT20N300 , IXBT24N170 , IXBT28N170A , IXBT2N250 , IXBT32N300 , IXBT42N170 , IXBT42N170A , IXBT6N170 , GT30F124 , IXBX55N300 , IXBX64N250 , IXBX75N170 , IXBX75N170A , IXDH35N60B , IXDH35N60BD1 , IXDP20N60B , IXDP20N60BD1 .

 

 
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