IXBX25N250 Specs and Replacement

Type Designator: IXBX25N250

Type: IGBT

Type of IGBT Channel: N

Absolute Maximum Ratings

Pc ⓘ - Maximum Power Dissipation: 300 W

|Vce|ⓘ - Maximum Collector-Emitter Voltage: 2500 V

|Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V

|Ic| ⓘ - Maximum Collector Current: 55 A @25℃

Tj ⓘ - Maximum Junction Temperature: 150 ℃

Electrical Characteristics

|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 3.3(max) V @25℃

tr ⓘ - Rise Time, typ: 240 nS

Coesⓘ - Output Capacitance, typ: 96 pF

Package: PLUS247

 IXBX25N250 Substitution

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IXBX25N250 datasheet

 ..1. Size:163K  ixys
 ixbx25n250.pdf pdf_icon

IXBX25N250

High Voltage, High Gain VCES = 2500V IXBX25N250 BIMOSFETTM Monolithic IC90 = 25A Bipolar MOS Transistor VCE(sat) 3.3V Symbol Test Conditions Maximum Ratings PLUS247TM VCES TC = 25 C to 150 C 2500 V VCGR TJ = 25 C to 150 C, RGE = 1M 2500 V VGES Continuous 20 V VGEM Transient 30 V G IC25 TC = 25 C 55 A C Tab E IC90 TC = 90 C 25 A ICM TC = 2... See More ⇒

 9.1. Size:201K  ixys
 ixbx28n300hv.pdf pdf_icon

IXBX25N250

Advance Technical Information High Voltage, High Gain VCES = 3000V IXBX28N300HV BIMOSFETTM Monolithic IC110 = 28A Bipolar MOS Transistor VCE(sat) 2.7V TO-247PLUS-HV Symbol Test Conditions Maximum Ratings VCES TJ = 25 C to 150 C 3000 V VCGR TJ = 25 C to 150 C, RGE = 1M 3000 V G E VGES Continuous 20 V Tab C VGEM Transient 30 V IC25 TC = 25 C 6... See More ⇒

Specs: IXBT20N300, IXBT24N170, IXBT28N170A, IXBT2N250, IXBT32N300, IXBT42N170, IXBT42N170A, IXBT6N170, GT30F124, IXBX55N300, IXBX64N250, IXBX75N170, IXBX75N170A, IXDH35N60B, IXDH35N60BD1, IXDP20N60B, IXDP20N60BD1

Keywords - IXBX25N250 transistor spec

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