IXBX55N300 Specs and Replacement

Type Designator: IXBX55N300

Type: IGBT

Type of IGBT Channel: N

Absolute Maximum Ratings

Pc ⓘ - Maximum Power Dissipation: 625 W

|Vce|ⓘ - Maximum Collector-Emitter Voltage: 3000 V

|Vge|ⓘ - Maximum Gate-Emitter Voltage: 25 V

|Ic| ⓘ - Maximum Collector Current: 130 A @25℃

Tj ⓘ - Maximum Junction Temperature: 150 ℃

Electrical Characteristics

|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 2.7 V @25℃

tr ⓘ - Rise Time, typ: 307 nS

Coesⓘ - Output Capacitance, typ: 275 pF

Package: PLUS247

 IXBX55N300 Substitution

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IXBX55N300 datasheet

 ..1. Size:213K  ixys
 ixbx55n300.pdf pdf_icon

IXBX55N300

High Voltage, High Gain VCES = 3000V IXBK55N300 BiMOSFETTM IC110 = 55A IXBX55N300 VCE(sat) 3.2V Monolithic Bipolar MOS Transistor TO-264 (IXBK) Symbol Test Conditions Maximum Ratings G C VCES TJ = 25 C to 150 C 3000 V E Tab VCGR TJ = 25 C to 150 C, RGE = 1M 3000 V VGES Continuous 25 V PLUS247 (IXBX) VGEM Transient 35 V IC25 TC = 25 C ( Chip... See More ⇒

 9.1. Size:215K  ixys
 ixbx50n360hv.pdf pdf_icon

IXBX55N300

Advance Technical Information BiMOSFETTM Monolithic VCES = 3600V IXBX50N360HV Bipolar MOS Transistor IC110 = 50A High Voltage, VCE(sat) 2.9V High Frequency TO-247PLUS-HV Symbol Test Conditions Maximum Ratings VCES TJ = 25 C to 150 C 3600 V VCGR TJ = 25 C to 150 C, RGE = 1M 3600 V VGES Continuous 20 V G VGEM Transient 30 V E Tab C IC25 TC =... See More ⇒

Specs: IXBT24N170, IXBT28N170A, IXBT2N250, IXBT32N300, IXBT42N170, IXBT42N170A, IXBT6N170, IXBX25N250, RJP63K2DPP-M0, IXBX64N250, IXBX75N170, IXBX75N170A, IXDH35N60B, IXDH35N60BD1, IXDP20N60B, IXDP20N60BD1, IXDP35N60B

Keywords - IXBX55N300 transistor spec

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