All IGBT. IXBX55N300 Datasheet

 

IXBX55N300 Datasheet and Replacement


   Type Designator: IXBX55N300
   Type: IGBT
   Type of IGBT Channel: N
   Pcⓘ - Maximum Power Dissipation: 625 W
   |Vce|ⓘ - Maximum Collector-Emitter Voltage: 3000 V
   |Vge|ⓘ - Maximum Gate-Emitter Voltage: 25 V
   |Ic|ⓘ - Maximum Collector Current: 130 A @25℃
   |VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 2.7 V @25℃
   Tjⓘ - Maximum Junction Temperature: 150 ℃
   trⓘ - Rise Time, typ: 307 nS
   Coesⓘ - Output Capacitance, typ: 275 pF
   Package: PLUS247
      - IGBT Cross-Reference

 

IXBX55N300 Datasheet (PDF)

 ..1. Size:213K  ixys
 ixbx55n300.pdf pdf_icon

IXBX55N300

High Voltage, High GainVCES = 3000VIXBK55N300BiMOSFETTMIC110 = 55AIXBX55N300VCE(sat) 3.2VMonolithic BipolarMOS TransistorTO-264 (IXBK)Symbol Test Conditions Maximum RatingsGCVCES TJ = 25C to 150C 3000 VETabVCGR TJ = 25C to 150C, RGE = 1M 3000 VVGES Continuous 25 VPLUS247 (IXBX)VGEM Transient 35 VIC25 TC = 25C ( Chip

 9.1. Size:215K  ixys
 ixbx50n360hv.pdf pdf_icon

IXBX55N300

Advance Technical InformationBiMOSFETTM MonolithicVCES = 3600VIXBX50N360HVBipolar MOS TransistorIC110 = 50AHigh Voltage,VCE(sat) 2.9VHigh FrequencyTO-247PLUS-HVSymbol Test Conditions Maximum RatingsVCES TJ = 25C to 150C 3600 VVCGR TJ = 25C to 150C, RGE = 1M 3600 VVGES Continuous 20 VGVGEM Transient 30 VETabCIC25 TC =

Datasheet: IXBT24N170 , IXBT28N170A , IXBT2N250 , IXBT32N300 , IXBT42N170 , IXBT42N170A , IXBT6N170 , IXBX25N250 , RJP63K2DPP-M0 , IXBX64N250 , IXBX75N170 , IXBX75N170A , IXDH35N60B , IXDH35N60BD1 , IXDP20N60B , IXDP20N60BD1 , IXDP35N60B .

History: IXGT72N60B3 | FGA5065ADF | IGW50N60H3 | FGB3056-F085 | HGTP3N60A4D | 1MBI400N-120 | SGP07N120

Keywords - IXBX55N300 transistor datasheet

 IXBX55N300 cross reference
 IXBX55N300 equivalent finder
 IXBX55N300 lookup
 IXBX55N300 substitution
 IXBX55N300 replacement

 

 
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