IXBX55N300 IGBT. Datasheet pdf. Equivalent
Type Designator: IXBX55N300
Type: IGBT + Anti-Parallel Diode
Type of IGBT Channel: N
Pcⓘ - Maximum Power Dissipation: 625 W
|Vce|ⓘ - Maximum Collector-Emitter Voltage: 3000 V
|Vge|ⓘ - Maximum Gate-Emitter Voltage: 25 V
|Ic|ⓘ - Maximum Collector Current: 130 A @25℃
|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 2.7 V @25℃
|VGEth|ⓘ - Maximum G-E Threshold Voltag: 5 V
Tjⓘ - Maximum Junction Temperature: 150 ℃
trⓘ - Rise Time, typ: 307 nS
Coesⓘ - Output Capacitance, typ: 275 pF
Qgⓘ - Total Gate Charge, typ: 335 nC
Package: PLUS247
IXBX55N300 Transistor Equivalent Substitute - IGBT Cross-Reference Search
IXBX55N300 Datasheet (PDF)
ixbx55n300.pdf
High Voltage, High GainVCES = 3000VIXBK55N300BiMOSFETTMIC110 = 55AIXBX55N300VCE(sat) 3.2VMonolithic BipolarMOS TransistorTO-264 (IXBK)Symbol Test Conditions Maximum RatingsGCVCES TJ = 25C to 150C 3000 VETabVCGR TJ = 25C to 150C, RGE = 1M 3000 VVGES Continuous 25 VPLUS247 (IXBX)VGEM Transient 35 VIC25 TC = 25C ( Chip
ixbx50n360hv.pdf
Advance Technical InformationBiMOSFETTM MonolithicVCES = 3600VIXBX50N360HVBipolar MOS TransistorIC110 = 50AHigh Voltage,VCE(sat) 2.9VHigh FrequencyTO-247PLUS-HVSymbol Test Conditions Maximum RatingsVCES TJ = 25C to 150C 3600 VVCGR TJ = 25C to 150C, RGE = 1M 3600 VVGES Continuous 20 VGVGEM Transient 30 VETabCIC25 TC =
Datasheet: IXBT24N170 , IXBT28N170A , IXBT2N250 , IXBT32N300 , IXBT42N170 , IXBT42N170A , IXBT6N170 , IXBX25N250 , RJP63K2DPP-M0 , IXBX64N250 , IXBX75N170 , IXBX75N170A , IXDH35N60B , IXDH35N60BD1 , IXDP20N60B , IXDP20N60BD1 , IXDP35N60B .
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