IXBX64N250 Specs and Replacement

Type Designator: IXBX64N250

Type: IGBT

Type of IGBT Channel: N

Absolute Maximum Ratings

Pc ⓘ - Maximum Power Dissipation: 735 W

|Vce|ⓘ - Maximum Collector-Emitter Voltage: 2500 V

|Vge|ⓘ - Maximum Gate-Emitter Voltage: 25 V

|Ic| ⓘ - Maximum Collector Current: 156 A @25℃

Tj ⓘ - Maximum Junction Temperature: 150 ℃

Electrical Characteristics

|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 2.5 V @25℃

tr ⓘ - Rise Time, typ: 318 nS

Coesⓘ - Output Capacitance, typ: 345 pF

Package: PLUS247

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IXBX64N250 datasheet

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IXBX64N250

High Voltage, High Gain VCES = 2500V IXBK64N250 BiMOSFETTM IC110 = 64A IXBX64N250 VCE(sat) 3.0V Monolithic Bipolar MOS Transistor TO-264 (IXBK) G Symbol Test Conditions Maximum Ratings C E VCES TJ = 25 C to 150 C 2500 V Tab VCGR TJ = 25 C to 150 C, RGE = 1M 2500 V VGES Continuous 25 V PLUS247TM (IXBX) VGEM Transient 35 V IC25 TC = 25 C (Chip ... See More ⇒

Specs: IXBT28N170A, IXBT2N250, IXBT32N300, IXBT42N170, IXBT42N170A, IXBT6N170, IXBX25N250, IXBX55N300, FGH40N60UFD, IXBX75N170, IXBX75N170A, IXDH35N60B, IXDH35N60BD1, IXDP20N60B, IXDP20N60BD1, IXDP35N60B, IXDR30N120

Keywords - IXBX64N250 transistor spec

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