All IGBT. IXBX64N250 Datasheet

 

IXBX64N250 IGBT. Datasheet pdf. Equivalent


   Type Designator: IXBX64N250
   Type: IGBT + Anti-Parallel Diode
   Type of IGBT Channel: N
   Pcⓘ - Maximum Power Dissipation: 735 W
   |Vce|ⓘ - Maximum Collector-Emitter Voltage: 2500 V
   |Vge|ⓘ - Maximum Gate-Emitter Voltage: 25 V
   |Ic|ⓘ - Maximum Collector Current: 156 A @25℃
   |VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 2.5 V @25℃
   |VGEth|ⓘ - Maximum G-E Threshold Voltag: 5 V
   Tjⓘ - Maximum Junction Temperature: 150 ℃
   trⓘ - Rise Time, typ: 318 nS
   Coesⓘ - Output Capacitance, typ: 345 pF
   Qgⓘ - Total Gate Charge, typ: 400 nC
   Package: PLUS247

 IXBX64N250 Transistor Equivalent Substitute - IGBT Cross-Reference Search

 

IXBX64N250 Datasheet (PDF)

 ..1. Size:190K  ixys
 ixbx64n250.pdf

IXBX64N250 IXBX64N250

High Voltage, High Gain VCES = 2500VIXBK64N250BiMOSFETTM IC110 = 64AIXBX64N250VCE(sat) 3.0VMonolithic BipolarMOS TransistorTO-264 (IXBK)GSymbol Test Conditions Maximum RatingsCEVCES TJ = 25C to 150C 2500 VTabVCGR TJ = 25C to 150C, RGE = 1M 2500 VVGES Continuous 25 VPLUS247TM (IXBX)VGEM Transient 35 VIC25 TC = 25C (Chip

Datasheet: IXBT28N170A , IXBT2N250 , IXBT32N300 , IXBT42N170 , IXBT42N170A , IXBT6N170 , IXBX25N250 , IXBX55N300 , GT30J124 , IXBX75N170 , IXBX75N170A , IXDH35N60B , IXDH35N60BD1 , IXDP20N60B , IXDP20N60BD1 , IXDP35N60B , IXDR30N120 .

 

 
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