IXBX64N250 Datasheet and Replacement
Type Designator: IXBX64N250
Type: IGBT
Type of IGBT Channel: N
Pc ⓘ - Maximum Power Dissipation: 735 W
|Vce|ⓘ - Maximum Collector-Emitter Voltage: 2500 V
|Vge|ⓘ - Maximum Gate-Emitter Voltage: 25 V
|Ic| ⓘ - Maximum Collector Current: 156 A @25℃
|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 2.5 V @25℃
Tj ⓘ - Maximum Junction Temperature: 150 ℃
tr ⓘ - Rise Time, typ: 318 nS
Coesⓘ - Output Capacitance, typ: 345 pF
Package: PLUS247
IXBX64N250 substitution
IXBX64N250 Datasheet (PDF)
ixbx64n250.pdf
High Voltage, High Gain VCES = 2500VIXBK64N250BiMOSFETTM IC110 = 64AIXBX64N250VCE(sat) 3.0VMonolithic BipolarMOS TransistorTO-264 (IXBK)GSymbol Test Conditions Maximum RatingsCEVCES TJ = 25C to 150C 2500 VTabVCGR TJ = 25C to 150C, RGE = 1M 2500 VVGES Continuous 25 VPLUS247TM (IXBX)VGEM Transient 35 VIC25 TC = 25C (Chip
Datasheet: IXBT28N170A , IXBT2N250 , IXBT32N300 , IXBT42N170 , IXBT42N170A , IXBT6N170 , IXBX25N250 , IXBX55N300 , FGH40N60UFD , IXBX75N170 , IXBX75N170A , IXDH35N60B , IXDH35N60BD1 , IXDP20N60B , IXDP20N60BD1 , IXDP35N60B , IXDR30N120 .
History: IXGT40N60C2D1
Keywords - IXBX64N250 transistor datasheet
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IXBX64N250 equivalent finder
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History: IXGT40N60C2D1
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