All IGBT. IXEH40N120 Datasheet

 

IXEH40N120 Datasheet and Replacement


   Type Designator: IXEH40N120
   Type: IGBT
   Type of IGBT Channel: N
   Pc ⓘ - Maximum Power Dissipation: 300 W
   |Vce|ⓘ - Maximum Collector-Emitter Voltage: 1200 V
   |Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
   |Ic| ⓘ - Maximum Collector Current: 60 A @25℃
   |VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 2.4 V @25℃
   Tj ⓘ - Maximum Junction Temperature: 150 ℃
   tr ⓘ - Rise Time, typ: 50 nS
   Package: TO247
 

 IXEH40N120 substitution

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IXEH40N120 Datasheet (PDF)

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IXEH40N120

IXEH 40N120IXEH 40N120D1IC25 = 60 ANPT3 IGBTVCES = 1200 VVCE(sat) typ. = 2.4 VC CTO-247 ADG GGEECC (TAB)EIXEH 40N120 IXEH 40N120D1Features IGBT NPT3 IGBTSymbol Conditions Maximum Ratings - low saturation voltage- positive temperature coefficient forVCES TVJ = 25C to 150C 1200 V easy paralleling- fast switchingVGES 20 V- short tail cur

Datasheet: IXDP20N60B , IXDP20N60BD1 , IXDP35N60B , IXDR30N120 , IXDR30N120D1 , IXDR35N60BD1 , IXEH25N120 , IXEH25N120D1 , SGT40N60NPFDPN , IXEH40N120D1 , IXEL40N400 , IXEN60N120 , IXEN60N120D1 , IXER20N120 , IXER20N120D1 , IXER35N120D1 , IXER60N120 .

History: IRG4BC10K

Keywords - IXEH40N120 transistor datasheet

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